Abstract: A HEMT device is provided. The HEMT device includes a substrate, a first epitaxial layer, a second epitaxial layer, an insulating layer, a gate, a source, and a drain. The first epitaxial layer is formed on the substrate. The second epitaxial layer is formed on the first epitaxial layer. The insulating layer is formed on the second epitaxial layer. The gate is formed in the insulating layer and extends into the second epitaxial layer. The source and the drain are formed in the insulating layer and extend into the second epitaxial layer, wherein the source and the drain are located on both sides of the gate.

Abstract: Methods for forming a group III-V device structure are provided. A method includes forming a first through via structure penetrating through group III-V compound layers over a front surface of a semiconductor substrate. The method also includes thinning the semiconductor substrate from a back surface of the semiconductor substrate. The method further includes etching the semiconductor substrate from the back surface to form a via hole substantially aligned with the first through via structure. In addition, the method includes etching the semiconductor substrate from the back surface to form a recess extending from a bottom surface of the recess towards the first through via structure. The first through via structure is exposed by the via hole and the recess. The method also includes forming a conductive layer in the via hole and the recess to form a second through via structure connected to the first through via structure.

Abstract: Methods for forming a group III-V device structure are provided. A method includes forming a first through via structure penetrating through group III-V compound layers over a front surface of a semiconductor substrate. The method also includes thinning the semiconductor substrate from a back surface of the semiconductor substrate. The method further includes etching the semiconductor substrate from the back surface to form a via hole substantially aligned with the first through via structure. In addition, the method includes etching the semiconductor substrate from the back surface to form a recess extending from a bottom surface of the recess towards the first through via structure. The first through via structure is exposed by the via hole and the recess. The method also includes forming a conductive layer in the via hole and the recess to form a second through via structure connected to the first through via structure.

Abstract: A method for manufacturing semiconductor device includes depositing a contact metal layer over a III-V compound layer. An anti-reflective coating (ARC) layer is deposited over the contact metal layer, and an etch stop layer is deposited over the ARC layer. The etch stop layer, the ARC layer, and the contact metal layer are etched to form a contact stack over the III-V compound layer. A conductive layer is deposited over the III-V compound layer, and the conductive layer is etched to form a gate field plate. The etch stop layer has an etch selectivity different from that of the conductive layer.

Abstract: A high electron mobility transistor (HEMT) structure including a substrate, a barrier layer, a buffer layer, a source, a drain, a multi-gate structure, and a multi-field plate structure is provided. The barrier layer is disposed over the substrate. The buffer layer is disposed between the substrate and the barrier layer, and includes a channel region adjacent to an interface between the barrier layer and the buffer layer. The source and the drain are disposed on the barrier layer. The multi-gate structure is disposed between the source and the drain, and includes first conductive finger portions spaced apart from each other. The multi-field plate structure is disposed between the multi-gate structure and the drain, and includes second conductive finger portions spaced apart from each other. The first conductive finger portions and the second conductive finger portions are in an alternate and parallel arrangement.

Abstract: A variable-frequency motor device that runs on alternating current includes a first converting circuit, a second converting circuit, and a DC variable-frequency motor. An operation module is coupled to the variable-frequency motor device, and provides the alternating current to the first or second converting circuit. The first converting circuit receives the alternating current, and generates a first rotation-speed signal. The second converting circuit receives the alternating current, and generates a second rotation-speed signal. The DC variable-frequency motor is driven at a rotation speed according to the first or second rotation-speed signal.

Abstract: A method for manufacturing semiconductor device includes depositing a contact metal layer over a III-V compound layer. An anti-reflective coating (ARC) layer is deposited over the contact metal layer, and an etch stop layer is deposited over the ARC layer. The etch stop layer, the ARC layer, and the contact metal layer are etched to form a contact stack over the III-V compound layer. A conductive layer is deposited over the III-V compound layer, and the conductive layer is etched to form a gate field plate. The etch stop layer has an etch selectivity different from that of the conductive layer.

Abstract: A high electron mobility transistor includes a buffer layer disposed on a substrate. A barrier layer is disposed on the buffer layer. A channel layer is disposed in the buffer layer and is adjacent to the interface between the buffer layer and the barrier layer. A gate electrode is disposed on the barrier layer. A drain electrode is disposed on the barrier layer on a first side of the gate electrode. A source electrode is disposed on the barrier layer on a second side of the gate electrode. A first enhancement layer is disposed on the barrier layer and the channel layer between the gate electrode and the drain electrode and is not in direct contact with the gate electrode, the source electrode, or the drain electrode. The first enhancement layer is an N-type doped III-V semiconductor.

Abstract: The disclosure relates to the field of OLED display technology, more particularly, to an OLED display panel and a manufacturing method thereof, during the manufacturing process of the OLED display panel, by forming a low gray color shift adjustment layer between the anode and the OLED device layer, and/or between the OLED device layer and the cathode, so as to solve the color shift problem under low gray-scale by adjusting thickness or doping concentration of the low gray color shift adjustment layer, and improve the accuracy of emitting color of the OLED panel.

Abstract: A semiconductor device includes a first III-V compound layer on a substrate, a second III-V compound layer on the first III-V compound layer, in which a material of the first III-V compound layer is different from that of the second III-V compound layer, a gate metal stack disposed on the second III-V compound layer, a source contact and a drain contact disposed at opposite sides of the gate metal stack, a gate field plate disposed between the gate metal stack and the drain contact, an anti-reflective coating (ARC) layer formed on the source contact and the drain contact, and an etch stop layer formed on the ARC layer.

Abstract: A display panel, a pixel array and a pixel structure are provided in the present disclosure. The pixel array includes: a substrate; and a plurality of pixel units, each of the pixel units being disposed on the substrate and including: a first surface facing the substrate; a second surface opposite to the substrate; and a side wall connecting the first surface and the second surface, wherein the first surface has an area greater than that of the second surface, and light from each pixel unit exits from the second surface and the side wall.

Abstract: The present disclosure relates to a watch and a method for manufacturing the same. The watch includes: a movement component; a display panel including: a first substrate disposed over the watch movement; a through hole passing through the display panel; a display element disposed on the first substrate and surrounding the through hole; and a package unit for packaging the display element and including at least a first package portion disposed on the first substrate, surrounding the through hole and located between the through hole and the display element so as to prevent external water or oxygen contacting the display element; a spindle disposed in the through hole and connected with the watch movement; and a pointer portion disposed over the display panel and connected with the spindle.

Abstract: The invention provides a process for manufacturing nickel oxide films with high conductivity, comprising steps of: operating a high power impulse magnetron sputtering system, HIPIMS system, in an argon and oxygen mixture, at peak power density higher than 1000 W/cm2 under a low duty cycle; and sputtering a Ni target to form the p-type NiO film with high conductivity on a substrate, the duty cycle=ton/(ton+toff), wherein ton is time of pulse on and toff is time of pulse off.

Abstract: The disclosure relates to the field of OLED display technology, more particularly, to an OLED display panel and a manufacturing method thereof, during the manufacturing process of the OLED display panel, by forming a low gray color shift adjustment layer between the anode and the OLED device layer, and/or between the OLED device layer and the cathode, so as to solve the color shift problem under low gray-scale by adjusting thickness or doping concentration of the low gray color shift adjustment layer, and improve the accuracy of emitting color of the OLED panel.

Abstract: A semiconductor device includes a first III-V compound layer on a substrate, a second III-V compound layer on the first III-V compound layer, in which a material of the first III-V compound layer is different from that of the second III-V compound layer, a gate metal stack disposed on the second III-V compound layer, a source contact and a drain contact disposed at opposite sides of the gate metal stack, a gate field plate disposed between the gate metal stack and the drain contact, an anti-reflective coating (ARC) layer formed on the source contact and the drain contact, and an etch stop layer formed on the ARC layer.

Abstract: One embodiment of the present invention discloses an AMOLED display device and a method for producing the sub-pixels thereof. To change the metal masks used for forming the resonator adjustment layer in sub-pixels to form the sub-pixels with resonator adjustment layers in different thicknesses. On other hands, a light blue sub-pixel and an orange sub-pixel are added into a pixel unit to form the pixel unit consisting of a blue sub-pixel, a red sub-pixel, a green sub-pixel, a light blue sub-pixel and an orange sub-pixel. The AMOLED with the above features can reduce the power consumption in the display screen greatly, and can maintain the high color saturation.

Abstract: An organic light-emitting diode fluorescent device includes an anode layer, a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer. A method for producing the organic light-emitting diode fluorescent device includes providing an anode substrate as an anode layer and disposing a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer on the anode layer in sequence. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer while producing the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer.

Abstract: A power measurement system for multiple power sources includes a plurality of measurement apparatuses, a multiplexer, and a processing module. Each of the measurement apparatuses has a sense resistor and a sense amplifier. The sense resistor is electrically connected to a power source at one terminal thereof and electrically connected to a load at the other terminal thereof. The sense amplifier receives a voltage difference across the sense resistor, amplifies the voltage difference by a gain value, and outputs an amplified sense voltage. The multiplexer receives the amplified sense voltages and outputs one of the amplified sense voltages. The processing module receives the one amplified sense voltage outputted from the multiplexer and calculates an output power of the power source according to the one amplified sense voltage. Furthermore, a method of operating the power measurement system is provided.

Abstract: An organic light-emitting diode fluorescent device includes an anode layer, a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer. A method for producing the organic light-emitting diode fluorescent device includes providing an anode substrate as an anode layer and disposing a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer on the anode layer in sequence. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer while producing the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer.

Abstract: One embodiment of the present invention discloses an AMOLED display device and a method for producing the sub-pixels thereof. To change the metal masks used for forming the resonator adjustment layer in sub-pixels to form the sub-pixels with resonator adjustment layers in different thicknesses. On other hands, a light blue sub-pixel and an orange sub-pixel are added into a pixel unit to form the pixel unit consisting of a blue sub-pixel, a red sub-pixel, a green sub-pixel, a light blue sub-pixel and an orange sub-pixel. The AMOLED with the above features can reduce the power consumption in the display screen greatly, and can maintain the high color saturation.