Abstract: A semiconductor device includes a first III-V compound layer on a substrate, a second III-V compound layer on the first III-V compound layer, in which a material of the first III-V compound layer is different from that of the second III-V compound layer, a gate metal stack disposed on the second III-V compound layer, a source contact and a drain contact disposed at opposite sides of the gate metal stack, a gate field plate disposed between the gate metal stack and the drain contact, an anti-reflective coating (ARC) layer formed on the source contact and the drain contact, and an etch stop layer formed on the ARC layer.

Abstract: One embodiment of the present invention discloses an AMOLED display device and a method for producing the sub-pixels thereof. To change the metal masks used for forming the resonator adjustment layer in sub-pixels to form the sub-pixels with resonator adjustment layers in different thicknesses. On other hands, a light blue sub-pixel and an orange sub-pixel are added into a pixel unit to form the pixel unit consisting of a blue sub-pixel, a red sub-pixel, a green sub-pixel, a light blue sub-pixel and an orange sub-pixel. The AMOLED with the above features can reduce the power consumption in the display screen greatly, and can maintain the high color saturation.

Abstract: An organic light-emitting diode fluorescent device includes an anode layer, a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer. A method for producing the organic light-emitting diode fluorescent device includes providing an anode substrate as an anode layer and disposing a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer on the anode layer in sequence. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer while producing the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer.

Abstract: A power measurement system for multiple power sources includes a plurality of measurement apparatuses, a multiplexer, and a processing module. Each of the measurement apparatuses has a sense resistor and a sense amplifier. The sense resistor is electrically connected to a power source at one terminal thereof and electrically connected to a load at the other terminal thereof. The sense amplifier receives a voltage difference across the sense resistor, amplifies the voltage difference by a gain value, and outputs an amplified sense voltage. The multiplexer receives the amplified sense voltages and outputs one of the amplified sense voltages. The processing module receives the one amplified sense voltage outputted from the multiplexer and calculates an output power of the power source according to the one amplified sense voltage. Furthermore, a method of operating the power measurement system is provided.

Abstract: An organic light-emitting diode fluorescent device includes an anode layer, a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer. A method for producing the organic light-emitting diode fluorescent device includes providing an anode substrate as an anode layer and disposing a hole injection layer, an emissive layer, an electron injection layer, and a cathode layer on the anode layer in sequence. A confinement layer is disposed on at least one of an upper face and a lower face of the emissive layer while producing the emissive layer. The confinement layer has a triplet energy level higher than a triplet energy level of the emissive layer.

Abstract: One embodiment of the present invention discloses an AMOLED display device and a method for producing the sub-pixels thereof. To change the metal masks used for forming the resonator adjustment layer in sub-pixels to form the sub-pixels with resonator adjustment layers in different thicknesses. On other hands, a light blue sub-pixel and an orange sub-pixel are added into a pixel unit to form the pixel unit consisting of a blue sub-pixel, a red sub-pixel, a green sub-pixel, a light blue sub-pixel and an orange sub-pixel. The AMOLED with the above features can reduce the power consumption in the display screen greatly, and can maintain the high color saturation.

Abstract: A DC motor device includes a first converting circuit, a second converting circuit, and a DC motor. A switch element is coupled to the DC motor device, and provides an alternating current to the first or second converting circuit. The first converting circuit receives the alternating current, and generates a first rotation speed signal. The second converting circuit receives the alternating current, and generates a second rotation speed signal. The DC motor is driven at a rotation speed according to the first or second rotation speed signal.

Abstract: A control method of an electronic apparatus is provided. The electronic apparatus includes a processing unit, a memory unit and a near field communication (NFC) device. The control method includes following steps. A mode command is set. When the electronic apparatus enters a system shut down state, the mode command is read. It is determined whether to let the NFC device entering a card emulation mode according to the mode command. A Control right of the memory unit is handed over to the NFC device from the processing unit when the NFC device enters the card emulation mode. Information of the electronic apparatus stored in the memory unit is accessed in response to a control signal when the control signal is received by the NFC device. The electronic apparatus using the same is also provided.

Abstract: A sink drain hole structure, which can be more securely connected with a drain by a connector without loosening. The sink drain hole structure includes a sink main body formed of a rigid wall and a drain hole integrally formed with the sink main body. The drain hole is defined with a horizontal reference axis and a vertical reference axis. The drain hole has an edge section in the direction of the horizontal reference axis for supporting and connecting with a drain (or a drain pipe), a connection section extending from the edge section in the direction of the vertical reference axis and a terminal section (or folding edge) extending from the connection section in the direction of the horizontal reference axis. The terminal section overlaps at least a part of the edge section to form a double-layered structure defining an elastic space.

Abstract: An organic light emitting device relates to a WOLED based Top emission organic light emitting device and the manufacturing method thereof and a display panel which applies the organic emitting device. In the organic light emitting device, a plurality of emitting units are formed on a substrate and isolated respectively; a plurality of independent optical adjustment layers are formed between the reflective electrode and the transparent positive electrode of each emitting unit respectively; a color filter layer is formed above the emitting units. This embodiment applies the structure of WOLED into the top emission device, the mask having a maximum aperture ratio in the evaporation process, consequently, it improved yield rate of display panel manufacturing, reduced the costing of the evaporation process and improved the resolution of the display panel.

Abstract: A variable-frequency motor device that runs on alternating current includes a first converting circuit, a second converting circuit, and a DC variable-frequency motor. An operation module is coupled to the variable-frequency motor device, and provides the alternating current to the first or second converting circuit. The first converting circuit receives the alternating current, and generates a first rotation-speed signal. The second converting circuit receives the alternating current, and generates a second rotation-speed signal. The DC variable-frequency motor is driven at a rotation speed according to the first or second rotation-speed signal.

Abstract: A DC motor device includes a first converting circuit, a second converting circuit, and a DC motor. A switch element is coupled to the DC motor device, and provides an alternating current to the first or second converting circuit. The first converting circuit receives the alternating current, and generates a first rotation speed signal. The second converting circuit receives the alternating current, and generates a second rotation speed signal. The DC motor is driven at a rotation speed according to the first or second rotation speed signal.

Abstract: A power measurement system for multiple power sources includes a plurality of measurement apparatuses, a multiplexer, and a processing module. Each of the measurement apparatuses has a sense resistor and a sense amplifier. The sense resistor is electrically connected to a power source at one terminal thereof and electrically connected to a load at the other terminal thereof. The sense amplifier receives a voltage difference across the sense resistor, amplifies the voltage difference by a gain value, and outputs an amplified sense voltage. The multiplexer receives the amplified sense voltages and outputs one of the amplified sense voltages. The processing module receives the one amplified sense voltage outputted from the multiplexer and calculates an output power of the power source according to the one amplified sense voltage. Furthermore, a method of operating the power measurement system is provided.

Abstract: An electronic storage device and a data protection method are provided. The electronic storage device is electrically connected to a host, and stores data of the host. The data protection method includes the following steps: providing a backup battery where the backup battery is configured inside the electronic storage device to provide electric power for an operation of the electronic storage device when the host does not provide electricity to the electronic storage device; setting a time setting value; transmitting a login event to the electronic storage device; and the electronic storage device determines whether to protect stored data in the electronic storage device according to the time setting value and the login event, wherein if a determination result is affirmative, the electronic storage device protects the stored data.

Abstract: An apparatus for detecting bus connection is provided for determining whether an electrical connector of a peripheral device is connected to an electrical connection port. In the apparatus, a detection capacitor is electrically coupled to a detection pin in the electrical connection port, and a controller is provided to transmit a detection signal to the detection pin. According to the signal fed back by the detection capacitor, the occurrences of the charge and discharge phenomena in the detection capacitor are determined, and then the controller is able to determine whether the detection pin of the electrical connector is electrically coupled to the electrical connector, so as to initiate a system event. The detection pin is not electrically charged when the detection pin is not electrically coupled to the electrical connector, so as to prevent the detection pin from being electrolyzed in the water or in a humid circumstance.

Abstract: An apparatus for detecting bus connection is provided for determining whether an electrical connector of a peripheral device is connected to an electrical connection port. In the apparatus, a detection capacitor is electrically coupled to a detection pin in the electrical connection port, and a controller is provided to transmit a detection signal to the detection pin. According to the signal fed back by the detection capacitor, the occurrences of the charge and discharge phenomena in the detection capacitor are determined, and then the controller is able to determine whether the detection pin of the electrical connector is electrically coupled to the electrical connector, so as to initiate a system event. The detection pin is not electrically charged when the detection pin is not electrically coupled to the electrical connector, so as to prevent the detection pin from being electrolyzed in the water or in a humid circumstance.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistivity layer. The metal layer is formed on the substrate. The p-type semiconductor layer is formed on the metal layer and may include a compound of copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound of at least two of copper, selenium or sulfur. The n-type semiconductor layer exhibits photo catalyst behavior that can increase carrier mobility by receiving light, and is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer. The high resistivity layer is formed between the metal layer and the transparent conductive layer.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a high resistivity layer, an assistant electrode layer, and a transparent conductive layer. The metal layer is formed on the substrate, and comprises a plurality of p-type electrode units separated from each other. The p-type semiconductor layer is formed on the metal layer. The n-type semiconductor is formed on the p-type semiconductor layer, thereby forming a p-n junction. The high resistivity layer is formed on the n-type semiconductor layer. The assistant electrode layer is formed on the high resistivity layer and the p-type electrode units. The transparent conductive layer is formed on the assistant electrode layer, the high resistivity layer and the p-type electrode units. Accordingly, at least one cell is formed on each of the p-type electrode units. The assistant electrode layer and the transparent conductive layer are connected to the cells in series.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistivity layer. The metal layer is formed on the substrate. The p-type semiconductor layer is formed on the metal layer and may include a compound of copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound of at least two of copper, selenium or sulfur. The n-type semiconductor layer exhibits photo catalyst behavior that can increase carrier mobility by receiving light, and is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer. The high resistivity layer is formed between the metal layer and the transparent conductive layer.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a high resistivity layer, a p-type semiconductor layer, an n-type semiconductor layer and a transparent conductive layer. The metal layer may include molybdenum and be formed on the substrate to be a back contact metal layer of the cell. The high resistivity layer (e.g., V2O5) is formed on the metal layer. The p-type semiconductor layer is formed on the high resistivity layer and may include compound of CIGS or CIS. The n-type semiconductor layer (e.g., CdS) is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer.