Abstract: A DC motor device includes a first converting circuit, a second converting circuit, and a DC motor. A switch element is coupled to the DC motor device, and provides an alternating current to the first or second converting circuit. The first converting circuit receives the alternating current, and generates a first rotation speed signal. The second converting circuit receives the alternating current, and generates a second rotation speed signal. The DC motor is driven at a rotation speed according to the first or second rotation speed signal.

Abstract: A control method of an electronic apparatus is provided. The electronic apparatus includes a processing unit, a memory unit and a near field communication (NFC) device. The control method includes following steps. A mode command is set. When the electronic apparatus enters a system shut down state, the mode command is read. It is determined whether to let the NFC device entering a card emulation mode according to the mode command. A Control right of the memory unit is handed over to the NFC device from the processing unit when the NFC device enters the card emulation mode. Information of the electronic apparatus stored in the memory unit is accessed in response to a control signal when the control signal is received by the NFC device. The electronic apparatus using the same is also provided.

Abstract: A sink drain hole structure, which can be more securely connected with a drain by a connector without loosening. The sink drain hole structure includes a sink main body formed of a rigid wall and a drain hole integrally formed with the sink main body. The drain hole is defined with a horizontal reference axis and a vertical reference axis. The drain hole has an edge section in the direction of the horizontal reference axis for supporting and connecting with a drain (or a drain pipe), a connection section extending from the edge section in the direction of the vertical reference axis and a terminal section (or folding edge) extending from the connection section in the direction of the horizontal reference axis. The terminal section overlaps at least a part of the edge section to form a double-layered structure defining an elastic space.

Abstract: An organic light emitting device relates to a WOLED based Top emission organic light emitting device and the manufacturing method thereof and a display panel which applies the organic emitting device. In the organic light emitting device, a plurality of emitting units are formed on a substrate and isolated respectively; a plurality of independent optical adjustment layers are formed between the reflective electrode and the transparent positive electrode of each emitting unit respectively; a color filter layer is formed above the emitting units. This embodiment applies the structure of WOLED into the top emission device, the mask having a maximum aperture ratio in the evaporation process, consequently, it improved yield rate of display panel manufacturing, reduced the costing of the evaporation process and improved the resolution of the display panel.

Abstract: A DC motor device includes a first converting circuit, a second converting circuit, and a DC motor. A switch element is coupled to the DC motor device, and provides an alternating current to the first or second converting circuit. The first converting circuit receives the alternating current, and generates a first rotation speed signal. The second converting circuit receives the alternating current, and generates a second rotation speed signal. The DC motor is driven at a rotation speed according to the first or second rotation speed signal.

Abstract: A variable-frequency motor device that runs on alternating current includes a first converting circuit, a second converting circuit, and a DC variable-frequency motor. An operation module is coupled to the variable-frequency motor device, and provides the alternating current to the first or second converting circuit. The first converting circuit receives the alternating current, and generates a first rotation-speed signal. The second converting circuit receives the alternating current, and generates a second rotation-speed signal. The DC variable-frequency motor is driven at a rotation speed according to the first or second rotation-speed signal.

Abstract: A power measurement system for multiple power sources includes a plurality of measurement apparatuses, a multiplexer, and a processing module. Each of the measurement apparatuses has a sense resistor and a sense amplifier. The sense resistor is electrically connected to a power source at one terminal thereof and electrically connected to a load at the other terminal thereof. The sense amplifier receives a voltage difference across the sense resistor, amplifies the voltage difference by a gain value, and outputs an amplified sense voltage. The multiplexer receives the amplified sense voltages and outputs one of the amplified sense voltages. The processing module receives the one amplified sense voltage outputted from the multiplexer and calculates an output power of the power source according to the one amplified sense voltage. Furthermore, a method of operating the power measurement system is provided.

Abstract: An electronic storage device and a data protection method are provided. The electronic storage device is electrically connected to a host, and stores data of the host. The data protection method includes the following steps: providing a backup battery where the backup battery is configured inside the electronic storage device to provide electric power for an operation of the electronic storage device when the host does not provide electricity to the electronic storage device; setting a time setting value; transmitting a login event to the electronic storage device; and the electronic storage device determines whether to protect stored data in the electronic storage device according to the time setting value and the login event, wherein if a determination result is affirmative, the electronic storage device protects the stored data.

Abstract: An apparatus for detecting bus connection is provided for determining whether an electrical connector of a peripheral device is connected to an electrical connection port. In the apparatus, a detection capacitor is electrically coupled to a detection pin in the electrical connection port, and a controller is provided to transmit a detection signal to the detection pin. According to the signal fed back by the detection capacitor, the occurrences of the charge and discharge phenomena in the detection capacitor are determined, and then the controller is able to determine whether the detection pin of the electrical connector is electrically coupled to the electrical connector, so as to initiate a system event. The detection pin is not electrically charged when the detection pin is not electrically coupled to the electrical connector, so as to prevent the detection pin from being electrolyzed in the water or in a humid circumstance.

Abstract: An apparatus for detecting bus connection is provided for determining whether an electrical connector of a peripheral device is connected to an electrical connection port. In the apparatus, a detection capacitor is electrically coupled to a detection pin in the electrical connection port, and a controller is provided to transmit a detection signal to the detection pin. According to the signal fed back by the detection capacitor, the occurrences of the charge and discharge phenomena in the detection capacitor are determined, and then the controller is able to determine whether the detection pin of the electrical connector is electrically coupled to the electrical connector, so as to initiate a system event. The detection pin is not electrically charged when the detection pin is not electrically coupled to the electrical connector, so as to prevent the detection pin from being electrolyzed in the water or in a humid circumstance.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistivity layer. The metal layer is formed on the substrate. The p-type semiconductor layer is formed on the metal layer and may include a compound of copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound of at least two of copper, selenium or sulfur. The n-type semiconductor layer exhibits photo catalyst behavior that can increase carrier mobility by receiving light, and is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer. The high resistivity layer is formed between the metal layer and the transparent conductive layer.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a high resistivity layer, an assistant electrode layer, and a transparent conductive layer. The metal layer is formed on the substrate, and comprises a plurality of p-type electrode units separated from each other. The p-type semiconductor layer is formed on the metal layer. The n-type semiconductor is formed on the p-type semiconductor layer, thereby forming a p-n junction. The high resistivity layer is formed on the n-type semiconductor layer. The assistant electrode layer is formed on the high resistivity layer and the p-type electrode units. The transparent conductive layer is formed on the assistant electrode layer, the high resistivity layer and the p-type electrode units. Accordingly, at least one cell is formed on each of the p-type electrode units. The assistant electrode layer and the transparent conductive layer are connected to the cells in series.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistivity layer. The metal layer is formed on the substrate. The p-type semiconductor layer is formed on the metal layer and may include a compound of copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound of at least two of copper, selenium or sulfur. The n-type semiconductor layer exhibits photo catalyst behavior that can increase carrier mobility by receiving light, and is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer. The high resistivity layer is formed between the metal layer and the transparent conductive layer.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer and a transparent conductive layer. The substrate has a rough surface. The metal layer may include molybdenum and be formed on the rough surface. The p-type semiconductor layer is formed on the metal layer and may include CIGSS, CIGS, CIS, or compound of two or more of copper, selenium, sulfur. The n-type semiconductor layer is formed on the p-type semiconductor layer thereby forming a rough p-n junction surface. The n-type semiconductor layer may include CdS. The transparent conductive layer is formed on the n-type semiconductor layer. In an embodiment, the roughness Ra of the rough surface is between 0.01 to 100 ?m.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a high resistivity layer, a p-type semiconductor layer, an n-type semiconductor layer and a transparent conductive layer. The metal layer may include molybdenum and be formed on the substrate to be a back contact metal layer of the cell. The high resistivity layer (e.g., V2O5) is formed on the metal layer. The p-type semiconductor layer is formed on the high resistivity layer and may include compound of CIGS or CIS. The n-type semiconductor layer (e.g., CdS) is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer.

Abstract: The invention provides a method of forming a protection layer on a contour of a workpiece. The workpiece is made of at least one metal and/or at least one alloy. The method according to the invention forms an inorganic layer on the contour of the workpiece by an atomic layer deposition process and/or a plasma-enhanced atomic layer deposition process (or a plasma-assisted atomic layer deposition process), and the inorganic layer serves as the protection layer.

Abstract: A digital amblyopia image aid system provided with individually adjustable function, the structure thereof at least consists of an original image input, a system processing center and an image output after adjusting, wherein the characteristics is the said system processing center can adjust on vision according to individual amblyopia patient, and simulate the image seen by the vision disabled through linear and non-linear method to determine and adjust the suitable image contrast intensification parameters according to users' image intensification effect requirement to enhance the image contrast information and provide optimal image effect, and the said system can be applied in electronic magnification system, added with internet function, making it become class instruction reading system for the vision disabled, while the digital signal processor (DSP) is used for outdoors and convenience increasing, which adds exclusive image contrast intensification function into portable aid to bring more convenience and