Abstract: Disclosed is a scissor sheath, including a sheath and a support frame, wherein the sheath is a shell-like structure that creates an interior chamber. The sheath has two side parts, and each side part forms a chute. Each of the chutes stretches to the back edge of each corresponding side part. The support frame includes a base, two support arms and two pins, wherein the base connects each of the support arms, each of the pins is connected to each of the support arms, and the pins are laterally opposite each other. Each pin enters each chute, the sheath is erected on the top edge of an installation surface, and the supporting frame leans against the installation surface to provide support for the sheath.

Abstract: A liquid intrusion detection device includes at least one circuit board, a plurality of liquid detection components, a multiplexer and a computing component. The plurality of liquid detection components are disposed on the at least one circuit board. The multiplexer is disposed on the at least one circuit board and has a plurality of output pins respectively connected to the plurality of liquid detection components. The computing component is disposed on the at least one circuit board and connected to the multiplexer, and is configured to switch the multiplexer to output a detection signal to one of the plurality of liquid detection components through one of the plurality of output pins, and output a liquid intrusion notification signal when a response signal of the detection signal meets a preset potential.

Abstract: A radio frequency (RF) tamper detector of an electronic device can offer improved chassis intrusion monitoring to protect the device from software and hardware-based tampering. The tamper detector can monitor RF noise levels in a first frequency band and in a second frequency band to calculate an RF noise level moving average for each frequency band. If the moving averages in both frequency bands exceed a RF noise threshold, the tamper detector can set a cover removal flag to indicate that a cover of the device housing has been removed. The tamper detector can cause the electronic device to lock or disable a system BIOS when cover removal is detected. Additionally, the electronic device can notify remote monitoring systems (e.g., operated by an IT administrator or warranty support center) to receive additional instructions to secure the device.

Abstract: An example electronic device includes a network communication interface to connect to a conference server, a central control device communication interface to connect to a local central control device, a microphone and a processor. The processor is to receive audio at the microphone and send the audio to the local central control device and to the conference server. The processor is to send the audio to the local central control device such that it is received by a nearby electronic device before the audio is received from the conference server by the nearby electronic device.

Abstract: Disclosed is a scissor sheath, including a sheath and a support frame, wherein the sheath is a shell-like structure that creates an interior chamber. The sheath has two side parts, and each side part forms a chute. Each of the chutes stretches to the back edge of each corresponding side part. The support frame includes a base, two support arms and two pins, wherein the base connects each of the support arms, each of the pins is connected to each of the support arms, and the pins are laterally opposite each other. Each pin enters each chute, the sheath is erected on the top edge of an installation surface, and the supporting frame leans against the installation surface to provide support for the sheath.

Abstract: An example electronic device includes a network communication interface to connect to a conference server, a central control device communication interface to connect to a local central control device, a microphone and a processor. The processor is to receive audio at the microphone and send the audio to the local central control device and to the conference server. The processor is to send the audio to the local central control device such that it is received by a nearby electronic device before the audio is received from the conference server by the nearby electronic device.

Abstract: A device includes a first III-V compound layer, a second III-V compound layer, source and drain structures, a gate structure, and a gate field plate. The second III-V compound layer is over the first III-V compound layer. The source and drain structures are over the second III-V compound layer and spaced apart from each other. The gate structure is over the second III-V compound layer and between the source and drain structures. The gate field plate is over the second III-V compound. From a top view the gate field plate forms a strip pattern interposing a stripe pattern of the gate structure and a stripe pattern of the drain structure.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first III-V compound layer disposed on the substrate, a second III-V compound layer disposed on the first III-V compound layer, a p-type doped III-V compound layer disposed on the second III-V compound layer, a gate disposed over the p-type doped III-V compound layer, a source and a drain disposed on opposite sides of the gate, and a dielectric layer disposed between the p-type doped III-V compound layer and the gate. A method for forming the above semiconductor device is also provided.

Abstract: A device includes a first III-V compound layer, a second III-V compound layer, a dielectric layer, a contact, a metal-containing layer, and a metal contact. The second III-V compound layer is over the first III-V compound layer. The dielectric layer is over the second III-V compound layer. The contact extends through the dielectric layer to the second III-V compound layer. The contact is in contact with a top surface of the dielectric layer and an inner sidewall of the dielectric layer. The metal-containing layer is over and in contact with the contact, and a portion of the metal-containing layer is directly above the dielectric layer. The metal contact is over and in contact with the metal-containing layer.

Abstract: A method for forming a high electron mobility transistor (HEMT) includes forming a buffer layer on a transparent substrate. The method further includes forming a barrier layer on the buffer layer. A channel region is formed in the buffer layer adjacent to the interface between the buffer layer and the barrier layer. The method further includes forming a dielectric layer on the barrier layer. The method further includes forming source/drain electrodes through the dielectric layer and the barrier layer and disposed on the buffer layer. The method further includes forming a shielding layer conformally covering the dielectric layer and the source/drain electrodes. The method further includes performing a thermal process on the source/drain electrodes.

Abstract: A semiconductor device includes a compound semiconductor layer disposed on a substrate, a protection layer disposed on the compound semiconductor layer, and a source electrode, a drain electrode and a gate electrode penetrating the protection layer and on the compound semiconductor layer, wherein the gate electrode is disposed between the source electrode and the drain electrode. The semiconductor device also includes a plurality of field plates disposed over the protection layer and between the gate electrode and the drain electrode, wherein the plurality of field plates are separated from each other.

Abstract: A device includes a first III-V compound layer, a second III-V compound layer, source and drain structures, a gate structure, and a gate field plate. The second III-V compound layer is over the first III-V compound layer. The source and drain structures are over the second III-V compound layer and spaced apart from each other. The gate structure is over the second III-V compound layer and between the source and drain structures. The gate field plate is over the second III-V compound. From a top view the gate field plate forms a strip pattern interposing a stripe pattern of the gate structure and a stripe pattern of the drain structure.

Abstract: A high electron mobility transistor (HEMT) includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, source and drain structures over the second III-V compound layer and spaced apart from each other, a gate structure over the second III-V compound layer and between the source and drain structures, a gate field plate over the second III-V compound layer and between the gate structure and the drain structure, and an etch stop layer over the drain structure and spaced apart from the gate field plate.

Abstract: A device includes a first III-V compound layer, a second III-V compound layer, a dielectric layer, a contact, a metal-containing layer, and a metal contact. The second III-V compound layer is over the first III-V compound layer. The dielectric layer is over the second III-V compound layer. The contact extends through the dielectric layer to the second III-V compound layer. The contact is in contact with a top surface of the dielectric layer and an inner sidewall of the dielectric layer. The metal-containing layer is over and in contact with the contact, and a portion of the metal-containing layer is directly above the dielectric layer. The metal contact is over and in contact with the metal-containing layer.

Abstract: A semiconductor device includes and an active region and a peripheral region. The peripheral region includes a seal region. The semiconductor device includes a substrate and a seed layer one the substrate. The semiconductor device also includes a GaN-containing composite layer on the seed layer, and the GaN-containing composite layer is disposed in the active region and the peripheral region. The semiconductor device also includes a gate electrode, a source electrode and a drain electrode disposed on the GaN-containing composite layer within the active region. The source electrode and the drain electrode are disposed at two opposite sides of the gate electrode. The semiconductor device further includes a sealing structure, and the sealing structure includes a barrier structure and a seal component in the seal region. The barrier structure is disposed around the active region. The barrier structure penetrates the GaN-containing composite layer and the seed layer.

Abstract: A semiconductor device includes a base and a conductive layer to form a composite substrate. The conductive layer covers a surface of the base. The semiconductor device also includes a dielectric layer covering the conductive layer. The conductive layer is disposed between the dielectric layer and the base. The semiconductor device further includes a GaN-containing composite layer, a gate electrode disposed over the GaN-containing composite layer, a source electrode and a drain electrode disposed on the GaN-containing composite layer. The source electrode and the drain electrode are disposed at two opposite sides of the gate electrode. In addition, a method for manufacturing the semiconductor device with a composite substrate is provided.

Abstract: A semiconductor structure is provided. The semiconductor structure includes: a substrate; a source structure and a drain structure disposed on the substrate; a gate structure disposed on the substrate and between the source structure and the drain structure; a first field plate disposed on the substrate; a first oxide layer disposed between the substrate and the first field plate; a second field plate disposed on the first field plate, wherein the second field plate is closer to the drain structure than the first field plate; a planarized second oxide layer disposed between the first oxide layer and the second field plate; and a third field plate disposed on the second field plate, wherein the third field plate is closer to the drain structure than the second field plate.

Abstract: A semiconductor device includes a compound semiconductor layer disposed on a substrate, a protection layer disposed on the compound semiconductor layer, and a source electrode, a drain electrode and a gate electrode penetrating the protection layer and on the compound semiconductor layer, wherein the gate electrode is disposed between the source electrode and the drain electrode. The semiconductor device also includes a plurality of field plates disposed over the protection layer and between the gate electrode and the drain electrode, wherein the plurality of field plates are separated from each other.