Abstract: Methods of forming connector pad structures, interconnect structures, and structures thereof are disclosed. In some embodiments, a method of forming a connector pad structure includes forming an underball metallization (UBM) pad, and increasing a surface roughness of the UBM pad by exposing the UBM pad to a plasma treatment. A polymer material is formed over a first portion of the UBM pad, leaving a second portion of the UBM pad exposed.

Abstract: An embodiment method includes analyzing warpage characteristics of a first package component and a second package component and forming a plurality of solder paste elements on the first package component. A volume of each of the plurality of solder paste elements is based on the warpage characteristics of the first package component and the second package component. The method further includes aligning a plurality of connectors disposed on the second package component to the plurality of solder paste elements on the first package component and bonding the second package component to the first package component by reflowing the plurality of connectors and the plurality of solder paste elements.

Abstract: An embodiment method includes analyzing warpage characteristics of a first package component and a second package component and forming a plurality of solder paste elements on the first package component. A volume of each of the plurality of solder paste elements is based on the warpage characteristics of the first package component and the second package component. The method further includes aligning a plurality of connectors disposed on the second package component to the plurality of solder paste elements on the first package component and bonding the second package component to the first package component by reflowing the plurality of connectors and the plurality of solder paste elements.

Abstract: A method includes placing a first package component over a vacuum boat, wherein the vacuum boat comprises a hole, and wherein the first package component covers the hole. A second package component is placed over the first package component, wherein solder regions are disposed between the first and the second package components. The hole is vacuumed, wherein the first package component is pressed by a pressure against the vacuum boat, and wherein the pressure is generated by a vacuum in the hole. When the vacuum in the hole is maintained, the solder regions are reflowed to bond the second package component to the first package component.

Abstract: A semiconductor package comprises a top package and a bottom package with fan-out interconnect structures. A plurality of inter-package connectors electrically connect the top package and the bottom package, and are located near a perimeter of the semiconductor package. A first material is located in a space delimited by a lower surface of the top package, an upper surface of the bottom package, and the inner-most inter-package connectors of the semiconductor package, wherein the first material partially fills the space. A second material different from the first material encapsulates the inter-package connectors.

Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.

Abstract: Presented herein is a device processing boat comprising a base and at least one unit retainer disposed in the base. The device further comprises a cover having at least one recess configured to accept and retain at least one unit. The at least one recess is aligned over, and configured to hold the at least one unit over, at least a portion of the at least one unit retainer. The cover is retained to the device processing boat by the at least one unit retainer. At least one pressure sensor having at least one sensel is disposed in the base. The sensel is configured to sense a clamping force applied by the cover to the at least one unit.

Abstract: A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further includes a non-reflowable electrical connector over and bonded to the metal pad, and a molding material over the package component. The non-reflowable electrical connector is molded in the molding material and in contact with the molding material. The non-reflowable electrical connector has a top surface lower than a top surface of the molding compound.

Abstract: Semiconductor dies are bonded to each other and electrically connected to each other. An encapsulant is utilized to protect the semiconductor dies and external connections are formed to connect the semiconductor dies within the encapsulant. In an embodiment the external connections may comprise conductive pillars, conductive reflowable material, or combinations of such.

Abstract: A method includes placing a first device die and a second device die over a carrier, with a scribe line between the first device die and the second device die. The first device die and the second device die are encapsulated with an encapsulating material, which has a portion in the scribe line. The method further includes forming a dielectric layer over the encapsulating material, performing a first die-saw to form a first trench in the scribe line, performing a second die-saw to form a second trench in the scribe line, and performing a third die-saw on the scribe line to separate the first device die from the second device die.

Abstract: Presented herein is a device comprising a device processing boat comprising a base at least one unit retainer disposed in the base. The device further comprises a cover having at least one recess configured to accept and retain at least one unit, the at least one recess aligned over, and configured to hold the at least one unit over, at least a portion of the at least one unit retainer. The cover is retained to the device processing boat by the at least one unit retainer. At least one pressure sensor having at least one sensel is disposed in the base and having the sensel configured to sense a clamping force applied by the cover to the at least one unit.

Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.

Abstract: A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further includes a non-reflowable electrical connector over and bonded to the metal pad, and a molding material over the package component. The non-reflowable electrical connector is molded in the molding material and in contact with the molding material. The non-reflowable electrical connector has a top surface lower than a top surface of the molding compound.

Abstract: Methods and apparatus for a forming molded underfills. A method is disclosed including loading a flip chip substrate into a selected one of the upper mold chase and lower mold chase of a mold press at a first temperature; positioning a molded underfill material in the at least one of the upper and lower mold chases while maintaining the first temperature which is lower than a melting temperature of the molded underfill material; forming a sealed mold cavity and creating a vacuum in the mold cavity; raising the temperature of the molded underfill material to a second temperature greater than the melting point to cause the molded underfill material to flow over the flip chip substrate forming an underfill layer and forming an overmolded layer; and cooling the flip chip substrate to a third temperature substantially lower than the melting temperature of the molded underfill material. An apparatus is disclosed.

Abstract: The present disclosure provides a semiconductor package includes a contact pad, a device external to the contact pad and a solder bump on the contact pad. The device has a conductive contact pad corresponding to the contact pad. The solder bump connects the contact pad with the conductive contact pad. The solder bump comprises a height from a top of the solder bump to the contact pad; and a width which is a widest dimension of the solder bump in a direction perpendicular to the height. A junction portion of the solder bump in proximity to the contact pad comprises an hourglass shape.

Abstract: A conductive interconnect structure includes a contact pad; a conductive body connected to the contact pad at a first end; and a conductive layer positioned on a second end of the conductive body. The conductive body has a longitudinal direction perpendicular to a surface of the contact pad. The conductive body has an average grain size (a) on a cross sectional plane (Plane A) whose normal is perpendicular to the longitudinal direction of the conductive body. The conductive layer has an average grain size (b) on Plane A. The conductive body and the conductive layer are composed of same material, and the average grain size (a) is greater than the average grain size (b).

Abstract: Reflow processes and apparatuses are disclosed. A process includes enclosing a package workpiece in an enclosed environment of a chamber of a reflow tool; causing an oxygen content of the enclosed environment of the chamber to be less than 40 ppm; and performing a reflow process in the enclosed environment of the chamber while the oxygen content is less than 40 ppm. An apparatus includes a reflow chamber, a door to the reflow chamber, an energy source in the reflow chamber, and gas supply equipment coupled to the chamber. The door is operable to enclose an environment in the reflow chamber. The energy source is operable to increase a temperature in the environment in the reflow chamber. The gas supply equipment is operable to provide a gas to the reflow chamber.

Abstract: The present disclosure provides a semiconductor package includes a contact pad, a device external to the contact pad and a solder bump on the contact pad. The device has a conductive contact pad corresponding to the contact pad. The solder bump connects the contact pad with the conductive contact pad. The solder bump comprises a height from a top of the solder bump to the contact pad; and a width which is a widest dimension of the solder bump in a direction perpendicular to the height. A junction portion of the solder bump in proximity to the contact pad comprises an hourglass shape.

Abstract: A semiconductor package comprises a top package and a bottom package with fan-out interconnect structures. A plurality of inter-package connectors electrically connect the top package and the bottom package, and are located near a perimeter of the semiconductor package. A first material is located in a space delimited by a lower surface of the top package, an upper surface of the bottom package, and the inner-most inter-package connectors of the semiconductor package, wherein the first material partially fills the space. A second material different from the first material encapsulates the inter-package connectors.

Abstract: A conductive interconnect structure includes a contact pad; a conductive body connected to the contact pad at a first end; and a conductive layer positioned on a second end of the conductive body. The conductive body has a longitudinal direction perpendicular to a surface of the contact pad. The conductive body has an average grain size (a) on a cross sectional plane (Plane A) whose normal is perpendicular to the longitudinal direction of the conductive body. The conductive layer has an average grain size (b) on Plane A. The conductive body and the conductive layer are composed of same material, and the average grain size (a) is greater than the average grain size (b).