Abstract: In an embodiment, a device includes: a back-side redistribution structure including: a metallization pattern on a first dielectric layer; and a second dielectric layer on the metallization pattern; a through via extending through the first dielectric layer to contact the metallization pattern; an integrated circuit die adjacent the through via on the first dielectric layer; a molding compound on the first dielectric layer, the molding compound encapsulating the through via and the integrated circuit die; a conductive connector extending through the second dielectric layer to contact the metallization pattern, the conductive connector being electrically connected to the through via; and an intermetallic compound at the interface of the conductive connector and the metallization pattern, the intermetallic compound extending only partially into the metallization pattern.

Abstract: A package structure includes an insulating encapsulation, at least one die, and conductive structures. The at least one die is encapsulated in the insulating encapsulation. The conductive structures are located aside of the at least one die and surrounded by the insulating encapsulation, and at least one of the conductive structures is electrically connected to the at least one die. Each of the conductive structures has a first surface, a second surface opposite to the first surface and a slant sidewall connecting the first surface and the second surface, and each of the conductive structures has a top diameter greater than a bottom diameter thereof, and wherein each of the conductive structures has a plurality of pores distributed therein.

Abstract: An embodiment package includes a first package. The first package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and redistribution layers over the encapsulant and the first integrated circuit die. The package also includes a second package bonded to the first package by a plurality of functional connectors. The functional connectors and the redistribution layers electrically connect a second integrated circuit die of the second package to the first integrated circuit die. The package also includes a plurality of dummy connectors disposed between the first package and the second package. One end of each of the plurality of dummy connectors facing the first package is physically separated from the first package.

Abstract: Structures and formation methods of a chip package are provided. The method includes forming a protective layer to surround a semiconductor die, and the protective layer has opposing first and second surfaces. The method also includes forming a dielectric layer over the first surface of the protective layer and the semiconductor die. The method further includes forming a conductive feature over the dielectric layer such that the conductive feature is electrically connected to a conductive element of the semiconductor die. In addition, the method includes printing a warpage-control element over the second surface of the protective layer and the semiconductor die such that the semiconductor die is between the warpage-control element and the dielectric layer.

Abstract: Methods of forming connector pad structures, interconnect structures, and structures thereof are disclosed. In some embodiments, a method of forming a connector pad structure includes forming an underball metallization (UBM) pad, and increasing a surface roughness of the UBM pad by exposing the UBM pad to a plasma treatment. A polymer material is formed over a first portion of the UBM pad, leaving a second portion of the UBM pad exposed.

Abstract: An embodiment package includes a first package. The first package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and redistribution layers over the encapsulant and the first integrated circuit die. The package also includes a second package bonded to the first package by a plurality of functional connectors. The functional connectors and the redistribution layers electrically connect a second integrated circuit die of the second package to the first integrated circuit die. The package also includes a plurality of dummy connectors disposed between the first package and the second package. One end of each of the plurality of dummy connectors facing the first package is physically separated from the first package.

Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.

Abstract: An integrated fan-out package including an integrated circuit component, an insulating encapsulation, a redistribution circuit structure and a plurality of conductive terminals is provided. The insulating encapsulation laterally encapsulates sidewalls of the integrated circuit component. The redistribution circuit structure is disposed on the insulating encapsulation and the integrated circuit component. The redistribution circuit structure is electrically connected to the integrated circuit component and the redistribution circuit structure includes a plurality of ball pads. Each of the conductive terminals includes a conductive ball and a ring-shaped flux structure, wherein each of the conductive balls is disposed on and electrically connected to one of the ball pads. Each of the ring-shaped flux structures is disposed on the redistribution circuit structure. Each of the ring-shaped flux structure is disposed around and in contact with a bottom portion of the conductive ball.

Abstract: Tools and systems for processing semiconductor devices, and methods of processing semiconductor devices are disclosed. In some embodiments, a method of using a tool for processing semiconductor devices includes a tool with a second material disposed over a first material, and a plurality of apertures disposed within the first material and the second material. The second material comprises a higher reflectivity than the first material. Each of the apertures is adapted to retain a package component over a support during an exposure to energy.

Abstract: A system and method for applying an underfill is provided. An embodiment comprises applying an underfill to a substrate and patterning the underfill. Once patterned other semiconductor devices, such as semiconductor dies or semiconductor packages may then be attached to the substrate through the underfill, with electrical connections from the other semiconductor devices extending into the pattern of the underfill.

Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.

Abstract: A method of packaging includes placing a package component over a release film, wherein solder regions on a surface of the package component are in physical contact with the release film. Next, A molding compound filled between the release film and the package component is cured, wherein during the step of curing, the solder regions remain in physical contact with the release film.

Abstract: A system and method for applying an underfill is provided. An embodiment comprises applying an underfill to a substrate and patterning the underfill. Once patterned other semiconductor devices, such as semiconductor dies or semiconductor packages may then be attached to the substrate through the underfill, with electrical connections from the other semiconductor devices extending into the pattern of the underfill.

Abstract: Structures and formation methods of a chip package are provided. The method includes forming a protective layer to surround a semiconductor die, and the protective layer has opposing first and second surfaces. The method also includes forming a dielectric layer over the first surface of the protective layer and the semiconductor die. The method further includes forming a conductive feature over the dielectric layer such that the conductive feature is electrically connected to a conductive element of the semiconductor die. In addition, the method includes printing a warpage-control element over the second surface of the protective layer and the semiconductor die such that the semiconductor die is between the warpage-control element and the dielectric layer.

Abstract: Tools and systems for processing semiconductor devices, and methods of processing semiconductor devices are disclosed. In some embodiments, a method of using a tool for processing semiconductor devices includes a tool with a second material disposed over a first material, and a plurality of apertures disposed within the first material and the second material. The second material comprises a higher reflectivity than the first material. Each of the apertures is adapted to retain a package component over a support during an exposure to energy.

Abstract: A method of forming a package structure includes disposing a semiconductor device over a first dielectric layer, wherein a first redistribution line is in the first dielectric layer, forming a molding compound over the first dielectric layer and in contact with a sidewall of the semiconductor device, forming a second dielectric layer over the molding compound and the semiconductor device, forming a first opening in the second dielectric layer, the molding compound, and the first dielectric layer to expose the first redistribution line, and forming a first conductor in the first opening, wherein the first conductor is electrically connected to the first redistribution line.

Abstract: A package structure including at least one conductive plate, a redistribution layer, a first semiconductor chip, a conductive shielding structure and an insulating encapsulant is provided. The first semiconductor chip is sandwiched in between the at least one conductive plate and the redistribution layer, wherein the first semiconductor chip is disposed on the at least one conductive plate and electrically connected to the redistribution layer. The conductive shielding structure is sandwiched in between the at least one conductive plate and the redistribution layer, wherein the conductive shielding structure surrounds the first semiconductor chip and electrically connects the at least one conductive plate with the redistribution layer. The insulating encapsulant is disposed on the redistribution layer, encapsulating the first semiconductor chip, the conductive shielding structure, and surrounding the at least one conductive plate.

Abstract: Methods of forming connector pad structures, interconnect structures, and structures thereof are disclosed. In some embodiments, a method of forming a connector pad structure includes forming an underball metallization (UBM) pad, and increasing a surface roughness of the UBM pad by exposing the UBM pad to a plasma treatment. A polymer material is formed over a first portion of the UBM pad, leaving a second portion of the UBM pad exposed.

Abstract: A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further includes a non-reflowable electrical connector over and bonded to the metal pad, and a molding material over the package component. The non-reflowable electrical connector is molded in the molding material and in contact with the molding material. The non-reflowable electrical connector has a top surface lower than a top surface of the molding compound.

Abstract: A structure includes a first package and a second package. The second package is coupled to the first package by one or more connectors. Epoxy flux residue is disposed around the connectors and in contact with the connectors. A method includes providing a first package having first connector pads and providing a second package having corresponding second connector pads. Solder paste is printed on each of the first connector pads. Epoxy flux is printed on each of the solder paste. The first and second connector pads are aligned and the packages are pressed together. The solder paste is reflowed to connect the first connector pads to the second connector pads while leaving an epoxy flux residue around each of the connections.