Patents by Inventor Hsiung Lin

Hsiung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240143264
    Abstract: Disclosed is a wireless transmission system, including a mobile electronic device with first screen information, a computer with second screen information, and a docking station coupled to the computer. When accommodating the mobile electronic device, the docking station transmits an electrical signal to the mobile electronic device, wherein the computer confirms that the mobile electronic device is located on the docking station according to a Bluetooth Low Energy signal sent by the mobile electronic device, the computer transmits Wi-Fi service set identification information to the mobile electronic device through a Bluetooth Low Energy protocol, the computer and the mobile electronic device are connected to the same Wi-Fi access point, and the mobile electronic device sends the first screen information back to the computer. Accordingly, the problem that the computer and the mobile electronic device cannot transmit data or screen information to each other through a transmission line is solved.
    Type: Application
    Filed: July 21, 2023
    Publication date: May 2, 2024
    Applicant: Lanto Electronic Limited
    Inventors: Chih-Hsiung CHANG, Chia-Ching LIN
  • Patent number: 11972982
    Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.
    Type: Grant
    Filed: July 14, 2022
    Date of Patent: April 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun Hsiung Tsai, Yu-Ming Lin, Kuo-Feng Yu, Ming-Hsi Yeh, Shahaji B. More, Chandrashekhar Prakash Savant, Chih-Hsin Ko, Clement Hsingjen Wann
  • Publication number: 20240136418
    Abstract: A device includes an active region, a gate structure, a source/drain epitaxial structure, an epitaxial layer, a metal alloy layer, a contact, and a contact etch stop layer. The gate structure is across the active region. The source/drain epitaxial structure is over the active region and adjacent the gate structure. The epitaxial layer is over the source/drain epitaxial structure. The metal alloy layer is over the epitaxial layer. The contact is over the metal alloy layer. The contact etch stop layer lines sidewalls of the source/drain epitaxial structure. The metal alloy layer is spaced apart from the contact etch stop layer.
    Type: Application
    Filed: January 3, 2024
    Publication date: April 25, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Cheng CHEN, Chun-Hsiung LIN, Chih-Hao WANG
  • Publication number: 20240127814
    Abstract: Devices, systems and processes for a dynamic microphone system that enhances the passenger experience in autonomous vehicles are described. One example method for enhancing a passenger experiences includes generating, using an artificial intelligence algorithm, a plurality of filters based on a plurality of stored waveforms previously recorded by each of one or more passengers and a plurality of recordings of one or more noise sources, capturing voice commands from at least one of the one or more passengers inside the autonomous vehicle, generating voice commands with reduced distortion based on processing the voice commands using the plurality of filters, and instructing, based on the voice commands with reduced distortion, the autonomous vehicle to perform one or more actions.
    Type: Application
    Filed: December 26, 2023
    Publication date: April 18, 2024
    Inventors: Thomas Yamasaki, Rocky Chau-Hsiung Lin, Koichiro Kanda
  • Patent number: 11961944
    Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.
    Type: Grant
    Filed: January 31, 2023
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-En Yen, Ming-Da Cheng, Mirng-Ji Lii, Wen-Hsiung Lu, Cheng-Jen Lin, Chin-Wei Kang, Chang-Jung Hsueh
  • Patent number: 11961878
    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a deep trench capacitor (DTC) having a portion within the substrate, and an interconnect structure over the DTC and the substrate. The interconnect structure includes a seal ring structure in electrical contact with the substrate, a first conductive via in electrical contact with the DTC, and a first conductive line electrically coupling the seal ring structure to the first conductive via.
    Type: Grant
    Filed: December 13, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hsiung Tsai, Shahaji B. More, Yu-Ming Lin, Clement Hsingjen Wann
  • Patent number: 11961892
    Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.
    Type: Grant
    Filed: June 10, 2022
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Carlos H. Diaz, Chung-Cheng Wu, Chia-Hao Chang, Chih-Hao Wang, Jean-Pierre Colinge, Chun-Hsiung Lin, Wai-Yi Lien, Ying-Keung Leung
  • Patent number: 11954453
    Abstract: Systems and methods for natural language generation by an edge computing device are disclosed. In one embodiments, a method comprises: receiving, by an edge computing device, event data from an edge event; determining, by the edge computing device, that a network connection to a cloud server is not available; extracting, by the edge computing device, features of the event data; predicting, by a local neural network of the edge computing device, an action for the edge computing device to take based on the features of the event data, wherein the action is associated with a confidence level; and determining, by the edge computing device, whether the confidence level meets a predetermined threshold value.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: April 9, 2024
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chih-Hsiung Liu, I-Chien Lin, Cheng-Fang Lin, Joey H. Y. Tseng
  • Patent number: 11955506
    Abstract: A fabrication method of a display device includes the following steps: providing a light-emitting diode (LED) display device including an circuit substrate, first LEDs, and a second LED; detecting the LED display device, wherein the second LED cannot emit light normally; removing the second LED from the circuit substrate; providing a LED substrate; transferring a third LED of the LED substrate to a first transferring substrate; transferring the third LED on the first transferring substrate to a second transferring substrate; and electrically connecting the third LED on the second transposed substrate to the circuit substrate.
    Type: Grant
    Filed: June 15, 2021
    Date of Patent: April 9, 2024
    Assignee: Au Optronics Corporation
    Inventors: Shih-Hsiung Lin, Yang-En Wu
  • Publication number: 20240111210
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: May 9, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Pin-Chia LIAO, Ting-An LIN, Ting-An SHIH, Yu-Fang TSENG, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • Publication number: 20240112912
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: July 28, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Yu-Fang TSENG, Pin-Chia LIAO, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • Publication number: 20240113221
    Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.
    Type: Application
    Filed: November 28, 2023
    Publication date: April 4, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Hsiung TSAI, Shahaji B. MORE, Cheng-Yi PENG, Yu-Ming LIN, Kuo-Feng YU, Ziwei FANG
  • Patent number: 11948928
    Abstract: A display apparatus, including a circuit substrate, a driving unit and a light-emitting unit is provided. The driving unit is disposed on the circuit substrate. The light-emitting unit is disposed on the circuit substrate. A thickness of the driving unit is substantially the same as a thickness of the light-emitting unit.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: April 2, 2024
    Assignee: Au Optronics Corporation
    Inventors: Yang-En Wu, Shih-Hsiung Lin
  • Patent number: 11938896
    Abstract: Devices, systems and processes for the detection of unsafe cabin conditions that provides a safer passenger experience in autonomous vehicles are described. One example method for enhancing passenger safety includes capturing at least a set of images of one or more passengers in the vehicle, determining, based on the set of images, the occurrence of an unsafe activity in an interior of the vehicle, performing, using a neural network, a classification of the unsafe activity, and performing, based on the classification, one or more responsive actions.
    Type: Grant
    Filed: November 7, 2022
    Date of Patent: March 26, 2024
    Assignee: Alpine Electronics of Silicon Valley, Inc.
    Inventors: Rocky Chau-Hsiung Lin, Thomas Yamasaki, Koichiro Kanda
  • Patent number: 11942445
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-En Yen, Chin-Wei Kang, Kai-Jun Zhan, Wen-Hsiung Lu, Cheng-Jen Lin, Ming-Da Cheng, Mirng-Ji Lii
  • Publication number: 20240094834
    Abstract: An active stylus having physical writing function includes a tip shell including a first opening and a second opening, a first electrode including a first end protruded through the first opening of the tip shell and including a second end protruded through the second opening of the tip shell and entered a main body housing of the active stylus, wherein the first electrode includes conductive material. The tip shell includes non-conductive material. The first end of the first electrode is configured to leave colored traces on an object by physical friction caused between the first end of the first electrode and the object.
    Type: Application
    Filed: July 27, 2023
    Publication date: March 21, 2024
    Inventors: Shih-Yen LEE, Tzu-Yu TING, Yeh Sen-Fan CHUEH, Min-Hung LIN, Shih-Hsiung HSIAO
  • Patent number: 11933809
    Abstract: The present application discloses an inertial sensor comprising a proof mass, an anchor, a flexible member and several sensing electrodes. The anchor is positioned on one side of the sensing, mass block in a first axis. The flexible member is connected to the anchor point and extends along the first axis towards the proof mass to connect the proof mass, in which the several sensing electrodes are provided. In this way, the present application can effectively solve the problems of high difficulty in the production and assembly of inertial sensors and poor product reliability thereof.
    Type: Grant
    Filed: April 6, 2022
    Date of Patent: March 19, 2024
    Assignee: SENSORTEK TECHNOLOGY CORP.
    Inventors: Shih-Wei Lee, Chia-Hao Lin, Shih-Hsiung Tseng, Kuan-Ju Tseng, Chao-Shiun Wang
  • Patent number: 11935894
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Grant
    Filed: November 4, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Publication number: 20240085614
    Abstract: An anti-peep light source module includes a light source module and a viewing angle switching module. The light source module has a light source and a light guide plate (LGP) and has light emitting elements arranged along a first direction. The viewing angle switching module is located on a transmission path of an illumination beam of the light source module and includes a viewing angle limiting element and a viewing angle adjusting element configured to change a viewing angle of the illumination beam. The viewing angle limiting element has a grating structure and is located between the viewing angle adjusting element and the light source module. an included angle between an extension direction of the grating structure and the first direction is within a range from 88 degrees to 92 degrees. The anti-peep light source module and A display device achieve favorable optical performance, user experience, and production yield.
    Type: Application
    Filed: September 8, 2023
    Publication date: March 14, 2024
    Applicant: Coretronic Corporation
    Inventors: Yi-Cheng Lin, Chih-Hsuan Kuo, Sung-Chun Hsu, Ming-Hsiung Fan, Tzeng-Ke Shiau
  • Publication number: 20240083742
    Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li YANG, Kai-Di WU, Ming-Da CHENG, Wen-Hsiung LU, Cheng Jen LIN, Chin Wei KANG