Abstract: Methods, devices, and systems for expression transfer are disclosed. The disclosure includes capturing a first image of a face of a person. The disclosure includes generating an avatar based on the first image of the face of the person, with the avatar approximating the first image of the face of the person. The disclosure includes transmitting the avatar to a destination device. The disclosure includes capturing a second image of the face of the person on a source device. The disclosure includes calculating expression information based on the second image of the face of the person, with the expression information approximating an expression on the face of the person as captured in the second image. The disclosure includes transmitting the expression information from the source device to the destination device. The disclosure includes animating the avatar on a display component of the destination device using the expression information.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a first gate strip and a second gate strip. The substrate has at least one first fin in a first region, at least one second fin in a second region and an isolation layer covering lower portions of the first and second fins. The first fin includes a first material layer and a second material layer over the first material layer, and the interface between the first material layer and the second material layer is uneven. The first gate strip is disposed across the first fin. The second gate strip is disposed across the second fin.

Abstract: A semiconductor structure includes a fin disposed on a substrate, the fin including a channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein. The semiconductor structure further includes a gate stack engaging the channel region of the fin and gate spacers disposed between the gate stack and the source and drain regions of the fin, wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section of the channel is higher than a concentration of germanium in the two end sections of the channel, and wherein the middle section of the channel further includes a core portion and an outer portion surrounding the core portion with a germanium concentration profile from the core portion to the outer portion.

Abstract: A light-emitting diode element includes a first-type semiconductor layer, a second-type semiconductor layer, an active layer, an insulating layer, a first electrode, a second electrode, a first passivation layer, a first seed layer, a first electroplating layer, a first solder and second solder. The insulating layer covers a sidewall of the first-type semiconductor layer, a sidewall of the second-type semiconductor layer and a sidewall of the active layer. The first passivation layer covers a portion of the insulating layer on the sidewall of the first-type semiconductor layer, the sidewall of the second-type semiconductor layer and the sidewall of the active layer. The first seed layer is disposed on the first passivation layer. The first electroplating layer is disposed on the first seed layer. The first solder and the second solder are electrically connected to a first conductive pattern and a second conductive pattern of the first electroplating layer.

Abstract: A synchronization circuit for an interconnection protocol, a controller and a storage device are provided. The synchronization circuit includes a first synchronization circuit module and a second synchronization circuit module. The first synchronization circuit module converts first control information of a first clock domain output by a data link layer receiver of the first device into second control information of a second clock domain, and outputs the second control information of the second clock domain. The second synchronization circuit module is coupled to the first synchronization circuit module, and converts the second control information of the second clock domain output by the first synchronization circuit module into third control information of a third clock domain to be output to a data link layer transmitter of the first device. Any two among the first, second and third clock domains are asynchronous.

Abstract: A semiconductor device according to the present disclosure includes a first isolation feature and a second isolation feature, a fin structure extending lengthwise along a first direction and sandwiched between the first isolation feature and the second isolation feature along a second direction perpendicular to the first direction, a first channel member disposed over the first isolation feature, a second channel member disposed over the second isolation feature, and a gate structure disposed over and wrapping around the first channel member and the second channel member.

Abstract: A semiconductor structure includes a semiconductor fin extending from a substrate, a source/drain (S/D) feature disposed over the semiconductor fin, a silicide layer disposed over the S/D feature, where the silicide layer extends along a sidewall of the S/D feature, and an etch-stop layer (ESL) disposed along a sidewall of the silicide layer.

Abstract: A method for forming a fin field effect transistor device structure is provided. The method includes forming a first spacer layer over a first fin structure and a second fin structure. The method also includes forming a power rail between the first fin structure and the second fin structure. The method further includes forming a second spacer layer over the first spacer layer and the power rail. In addition, the method includes forming a fin isolation structure over the power rail between the first fin structure and the second fin structure. The method also includes forming an epitaxial structure over the first fin structure and the second fin structure. The method further includes forming an inter-layer dielectric structure covering the epitaxial structure. In addition, the method includes forming an opening exposing the epitaxial structure, the power rail and the fin isolation structure. The method also includes filling the opening with a first contact structure.

Abstract: A method for data processing of frame receiving of an interconnection protocol and a storage device, for use in a first device linkable to a second device according to the interconnection protocol. The method includes: in processing of frames originating from the second device and received by the first device: while sending data contained in a first frame to a network layer from a data link layer, pre-fetching symbols of a second frame; and after the data contained in the first frame are sent to the network layer and the symbols of the second frame are pre-fetched, sending data contained in the second frame to the network layer. Upon receipt of back-to-back frames, the efficiency of the frame receiving at the data link layer is enhanced.

Abstract: A scheduling method for charging multiple electric vehicles includes: get a sorted list of an operation period; get an estimated charging power consumption required for charging each electric vehicle when each electric vehicle is connected to one of the charging machines and get an instant power consumption of an electricity consuming field; control one or more of the charging machines to correspondingly charge one or more of the plurality of electric vehicles with higher priority in a departure order based on the departure order information in the sorted list when a sum of the instant power consumption and the estimated charging power consumptions is greater than a regulated power consumption that is smaller than an upper limit power consumption of the electricity consuming field, thereby preventing the instant power consumption of the electricity consuming field from exceeding the upper limit power consumption.

Abstract: Method and devices for creating a sedentary virtual-reality system are provided. A user interface is provided that allows for the intuitive navigation of the sedentary virtual-reality system based on the position of the users head. The sedentary virtual-reality system can render a desktop computing environment. The user can switch the virtual-reality system into an augmented reality viewing mode or a real-world viewing mode that allow the user to control and manipulate the rendered sedentary environment. The modes can also change to allow the user greater situational awareness and a longer duration of use.

Abstract: A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.

Abstract: Methods for manufacturing a semiconductor structure are provided. The method includes alternately stacking first semiconductor material layers and second semiconductor layers over a substrate and patterning the first semiconductor material layers and the second semiconductor layers to form a first fin structure and a second fin structure. The method also includes forming an insulating layer around the first fin structure and the second fin structure and forming a dielectric fin structure over the insulating layer and spaced apart from the first fin structure and the second fin structure. The method also includes forming a first source/drain structure attached to the first fin structure and forming a semiconductor layer covering the first source/drain structure. The method also includes oxidizing the semiconductor layer to form an oxide layer and forming a second source/drain structure attached to the second fin structure after the oxide layer is formed.

Abstract: A dynamic element method includes the following operations: summing up most significant bits of a digital code in a previous period and a pointer signal in the previous period, in order to generate a first signal; outputting the first signal to be an adjusted pointer signal according to a clock signal; and decoding the adjusted pointer signal to be control signals, in which the control signals are configured to set corresponding relations of components of a first digital to analog converter circuits and the most significant bits, in order to utilize the components to convert the most significant bits.

Abstract: A fin field effect transistor device structure is provided. A fin field effect transistor device structure includes a first fin structure and a second fin structure on a substrate. The fin field effect transistor device structure also includes a spacer layer surrounding the first fin structure and the second fin structure. The fin field effect transistor device structure further includes a power rail over the spacer layer between the first fin structure and the second fin structure. In addition, the fin field effect transistor device structure includes a first contact structure covering the first fin structure and connected to the power rail.

Abstract: A semiconductor structure includes a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin. The first and the second semiconductor fins extend lengthwise along a first direction over a substrate. A metal gate structure is disposed over the first and second semiconductor fins, the metal gate structure extending lengthwise along a second direction perpendicular to the first direction. A first epitaxial source/drain (S/D) feature is disposed over the first semiconductor fin, and a second epitaxial S/D feature is disposed over the second semiconductor fin. An interlayer dielectric (ILD) layer is disposed over the first and the second epitaxial S/D features. And an S/D contact is disposed directly above the first and second epitaxial S/D features. The S/D contact directly contacts the first epitaxial S/D feature, and the S/D contact is isolated from the second epitaxial S/D feature by the ILD layer.

Abstract: A method of charging management of an electric vehicle includes: get an initial power of the electric vehicle; calculate an actual power consumption of the electric vehicle in an operation period; get a remaining power by subtracting the actual power consumption from the initial power; get a predicted power consumption of the electric vehicle in a next operation period; control a charging machine to charge the electric vehicle after the electric vehicle being connected to the charging machine until a power of the electric vehicle reaches the predicted power consumption from the remaining power, thereby avoiding wasting power due to overcharging.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.