Abstract: Systems and methods are disclosed for applying neural networks in resource-constrained environments. A system may include a sensor located in a resource-constrained environment configured to generate sensor data of the resource-constrained environment. The system may also include a first computing device not located in the resource-constrained environment configured to produce a neural network structure based on the sensor data. The system may further include a second computing device located in the resource-constrained environment configured to provide the sensor data as input to the neural network structure. The second computing device may be further configured to determine a state of the resource-constrained environment based on the input of the sensor data to the neural network structure.

Abstract: A control method for error handling in a controller, storage medium therefor, controller, and storage device. The controller for use in a first device is capable of linking to a second device according to an interconnection protocol. The control method includes the following steps: handling a first error information by transmitting a negative acknowledgement control (NAC) message to the second device according to the interconnection protocol through the controller, wherein the first error information indicates a first error occurring while the controller performs data reception according to a protocol layer of the interconnection protocol; and setting error handling status data to indicate that error handling is asserted for the first error information so that the controller does not handle sequence number errors occurring after the first error until the error handling status data is set to indicate that the error handling is de-asserted.

Abstract: A semiconductor structure includes a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin, a first epitaxial source/drain (S/D) feature disposed over the first semiconductor fin, a second epitaxial S/D feature disposed over the second semiconductor fin, an interlayer dielectric (ILD) layer disposed over the first and the second epitaxial S/D features, and an S/D contact disposed over and contacting the first epitaxial S/D feature, where a portion of the S/D contact laterally extends over the second epitaxial S/D feature, and the portion is separated from the second epitaxial S/D feature by the ILD layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an epitaxial structure over the fin portion. The semiconductor device structure includes a dielectric fin over the base portion. The semiconductor device structure includes a silicide layer between the dielectric fin and the epitaxial structure. A distance between the silicide layer and the dielectric fin increases toward the base portion.

Abstract: An image capturing and depth alignment method includes radar scanning step, image capturing step, translation and synchronization step, alignment step, client detection step, client positioning step, scene map construction step, view image transmitting step, view image processing step, virtual object placement step. through translating, synchronizing, and aligning the radar scanning step's 3D point cloud map and the image capturing step's planar image of the scene, the back-end server therefore obtains surveillance information with both image and depth. Then, through positioning, multiply superimposing, image rotation and matching, speed comparison, uniformization of coordinate systems, and display through the smart glasses, a wearer of the smart glasses may be positioned and tracked in the scene. The wearer may also be instructed to reach a specific target or place of a specific object.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer including different semiconductor materials, and the fin comprises a channel region and a source/drain region; forming a dummy gate structure over the channel region of the fin and over the substrate; etching a portion of the fin in the source/drain region to form a trench therein, wherein a bottom surface of the trench is below a bottom surface of the second semiconductor layer; selectively removing an edge portion of the second semiconductor layer in the channel region such that the second semiconductor layer is recessed; forming a sacrificial structure around the recessed second semiconductor layer and over the bottom surface of the trench; and epitaxially growing a source/drain feature in the source/drain region of the fin.

Abstract: Devices, systems and processes for the detection of unsafe cabin conditions that provides a safer passenger experience in autonomous vehicles are described. One example method for enhancing passenger safety includes capturing at least a set of images of one or more passengers in the vehicle, determining, based on the set of images, the occurrence of an unsafe activity in an interior of the vehicle, performing, using a neural network, a classification of the unsafe activity, and performing, based on the classification, one or more responsive actions.

Abstract: A display panel includes a pixel array substrate, a plurality of vertical light emitting devices and a flip-chip light emitting device. The pixel array substrate has a first pixel area and a second pixel area. The vertical light emitting devices are disposed in the first pixel area and the second pixel area and electrically connected to the pixel array substrate. The flip-chip light emitting device is disposed in the second pixel area and electrically connected to the pixel array substrate. A color of an emitted light beam of the flip-chip light emitting device and a color of an emitted light beam of one of the vertical light emitting devices located in the first pixel area are identical.

Abstract: A method for manufacturing a semiconductor device includes forming a source region, a drain region, and a gate dielectric layer and a gate electrode covering a channel region between the source region and the drain region, forming an insulating layer over the source region, the drain region, and the gate electrode, forming first to third vias penetrating the insulating layer and exposing portions of the source region, the drain region, and the gate electrode, respectively, forming a source contact in the first via to electrically connect to the source region, forming a drain contact in the second via to electrically connect to the drain region, and forming a gate contact in the third via to electrically connect to the gate electrode. One or more of the first to third vias is formed by ion bombarding by a focused ion beam and followed by a thermal annealing process.

Abstract: A semiconductor device includes a semiconductor substrate, a first epitaxial feature having a first semiconductor material over the semiconductor substrate, and a second epitaxial feature having a second semiconductor material over the semiconductor substrate. The second semiconductor material being different from the first semiconductor material. The semiconductor device further includes a first silicide layer on the first epitaxial feature, a second silicide layer on the second epitaxial feature, a metal layer on the first silicide layer, a first contact feature over the metal layer, and a second contact feature over the second silicide layer. A first number of layers between the first contact feature and the first epitaxial feature is greater than a second number of layers between the second contact feature and the second epitaxial feature.

Abstract: The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices.

Abstract: A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

Abstract: Systems and methods are disclosed for applying neural networks in resource-constrained environments. A system may include a sensor located in a resource-constrained environment configured to generate sensor data of the resource-constrained environment. The system may also include a first computing device not located in the resource-constrained environment configured to produce a neural network structure based on the sensor data. The system may further include a second computing device located in the resource-constrained environment configured to provide the sensor data as input to the neural network structure. The second computing device may be further configured to determine a state of the resource-constrained environment based on the input of the sensor data to the neural network structure.

Abstract: An integrated circuit includes a first and second active region, a first conductive structure, an insulating region, a set of gates and a set of contacts. The first and second active region are in a substrate, extend in a first direction, are located on a first level, and being separated from one another in a second direction. The first conductive structure extends in the first direction, is located on the first level, and is between the first and second active region. The insulating region is located on at least the first level, and is between the first and second active region and the first conductive structure. The set of gates extend in the second direction, overlap the first conductive structure, and is located on a second level. The set of contacts extend in the second direction, overlap the first conductive structure, and is located on the second level.

Abstract: A semiconductor device includes a substrate; a fin structure formed on a substrate; and a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer, wherein the gate dielectric layer traverses the fin structure to overlay a central portion of the fin structure and opposite side portions of the fin structure that are located in respective undercuts formed in respective portions of a dielectric layer located adjacent to opposite sidewalls of the gate feature, wherein the undercuts extend beyond respective sidewalls of the gate feature and away from the central portion of the fin structure.

Abstract: A method for error handling of an interconnection protocol, a controller, and a storage device are provided. The method includes receiving a frame error position indication signal to indicate whether an error occurs in a frame in each clock cycle and a symbol position corresponding to the error, and receiving a frame correction position indication signal to indicate whether the frame in each clock cycle is correct and a symbol position corresponding to the frame that is correct; according to the frame error position indication signal and the frame correction position indication signal, determining that a frame error occurs in a first clock cycle, and after requesting for NAC frame transmission, sending a request for disabling the NAC frame transmission; and after the first clock cycle, comparing the frame error position indication signal and the frame correction position indication signal.

Abstract: A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

Abstract: Method and devices for testing a headphone with increased sensation are provided. The headphone can filter and amplify low frequency audio signals, which are then sent to a haptic device in the headphone. The haptic device can cause bass sensations at the top of the skull and at both ear cups. The testing system can evaluate the haptic and acoustic sensations produced by the headphone to evaluate if they have been properly assembled and calibrate the headphones if necessary.

Abstract: A method for data processing of frame receiving of an interconnection protocol and a storage device, for use in a first device linkable to a second device according to the interconnection protocol. The method includes: in processing of frames originating from the second device and received by the first device: while sending data contained in a first frame to a network layer from a data link layer, pre-fetching symbols of a second frame; and after the data contained in the first frame are sent to the network layer and the symbols of the second frame are pre-fetched, sending data contained in the second frame to the network layer. Upon receipt of back-to-back frames, the efficiency of the frame receiving at the data link layer is enhanced.