Abstract: Techniques and examples of determination of receiver (RX) beam for radio link monitoring (RLM) based on available spatial quasi-co-location (QCL) information in New Radio (NR) mobile communications are described. An apparatus receives downlink (DL) signaling from a network. The apparatus determines whether to extend an evaluation period of RLM based on a quasi-co-location (QCL) association provided in at least the DL signaling. The apparatus then executes extension of the evaluation period of the RLM, or not, based on a result of the determining.

Abstract: A method of reducing gray energy consumption and achieving optimal gray energy saving for carbon neutralization is proposed. In a cellular network, each cell or BS (group of cells) has renewable (green) and non-renewable (gray, on-grid power) energy sources. The renewable (green) energy is highly variable and unpredictable, while non-renewable (gray, on-grid power) is stable but is not renewable and thus has more carbon impact. Each cell or BS (group of cells) services is associated UEs when it is on. In one novel aspect, a cell or BS (group of cells) that consumes more non-renewable energy can give some or all of its served UEs to another cell or BS (group of cells) that consumes less non-renewable energy.

Abstract: A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width W5 towards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: A light-transmitting antenna includes a substrate, a first conductive pattern, and a second conductive pattern. The first conductive pattern has a first feeder unit, a first radiation unit, a second radiation unit, and a first connection unit. The first feeder unit and the first connection unit are connected to two sides of the first radiation unit. The first connection unit connects the first radiation unit and the second radiation unit. The second conductive pattern has a second feeder unit, a third radiation unit, a fourth radiation unit, and a second connection unit. The second feeder unit and the second connection unit are connected to two sides of the third radiation unit. The second connection unit connects the third radiation unit and the fourth radiation unit. An orthogonal projection of the second feeder unit on a first surface of the substrate at least partially overlaps the first feeder unit.

Abstract: The present invention provides a micro biosensor for reducing a measurement interference when measuring a target analyte in the biofluid, including: a substrate; a first working electrode configured on the surface, and including a first sensing section; a second working electrode configured on the surface, and including a second sensing section which is configured adjacent to at least one side of the first sensing section; and a chemical reagent covered on at least a portion of the first sensing section for reacting with the target analyte to produce a resultant. When the first working electrode is driven by a first working voltage, the first sensing section measures a physiological signal with respect to the target analyte. When the second working electrode is driven by a second working voltage, the second conductive material can directly consume the interferant so as to continuously reduce the measurement inference of the physiological signal.

Abstract: A semiconductor package structure includes a substrate having a wiring structure. A first semiconductor die is disposed over the substrate and is electrically coupled to the wiring structure. A second semiconductor die is disposed over the substrate and is electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are arranged side-by-side. Holes are formed on a surface of the substrate, wherein the holes are located within a projection of the first semiconductor die or the second semiconductor die on the substrate. Further, a molding material surrounds the first semiconductor die and the second semiconductor die, and surfaces of the first semiconductor die and the second semiconductor die facing away from the substrate are exposed by the molding material.

Abstract: An optical navigation device control method comprising: (a) computing brightness contrast information of original images captured by an image sensor of an optical navigation device; (b) computing brightness variation levels of the original images; (c) improving image qualities of the original images based on the brightness contrast information and the brightness variation levels, to generate adjusted images; and (d) computing movements of the optical navigation device based on displacement between the adjusted images. The optical navigation device is located on a surface. The step (d) comprises: collecting reference images of different parts of the surface for a plurality of combinations of moving directions of the optical navigation device and placement directions of the surface; and determining a type of the surface via comparing images of a current surface with the reference images.

Abstract: A radio device includes a first antenna array and an actuator. The first antenna array is configured to transmit a radiation beam to a remote device. The actuator is configured to change an orientation of the first antenna array, whereby a beam direction of the radiation beam is changed according to a change of the orientation of the first antenna array. The beam direction of the radiation beam is adjusted according to a beam steering mechanism performed by the first antenna array.

Abstract: A semiconductor package includes a first semiconductor die, a second semiconductor die, a semiconductor bridge, an integrated passive device, a first redistribution layer, and connective terminals. The second semiconductor die is disposed beside the first semiconductor die. The semiconductor bridge electrically connects the first semiconductor die with the second semiconductor die. The integrated passive device is electrically connected to the first semiconductor die. The first redistribution layer is disposed over the semiconductor bridge. The connective terminals are disposed on the first redistribution layer, on an opposite side with respect to the semiconductor bridge. The first redistribution layer is interposed between the integrated passive device and the connective terminals.

Abstract: A display device includes a substrate, a first light emitting element, a second light emitting element, and an optical film sheet. The first light emitting element and the second light emitting element are disposed on the substrate. The first light emitting element emits a first light, and the first light has a first wavelength range. The second light emitting element emits a second light, and the second light has a second wavelength range. The optical film sheet is disposed above the first light emitting element and the second light emitting element. The optical film sheet includes a first zone and a second zone. The first zone includes a first cholesteric liquid crystal, and the first cholesteric liquid crystal reflects light in at least the first wavelength range. The second zone includes a second cholesteric liquid crystal, and the second cholesteric liquid crystal reflects light in at least the second wavelength range.

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: Disclosed is a self-powered formaldehyde sensing device, comprising: a triboelectric material electrode layer including a first substrate and a first electrode layer formed on the first substrate; a triboelectric material dielectric layer including a second substrate, a second electrode layer formed on the second substrate, a dielectric reacting layer formed on the second electrode layer, and a reaction modification layer formed on the dielectric reacting layer to surface-modify the dielectric reacting layer, the reaction modification layer being a phosphomolybdic acid complex (cPMA) layer, the phosphomolybdic acid complex of the phosphomolybdic acid complex layer being obtained by dissolving 4,4?-bipyridine (BPY) in isopropanol (IPA) and then mixing with phosphomolybdic acid (PMA) solution; an elastic spacer; and an external circuit.

Abstract: Systems, methods and devices are provided, which can include an engineering change order (ECO) base. A base layout cell includes metal layer regions, conductive gate patterns arranged above metal layer regions; oxide definition (OD) patterns, metal-zero layer over oxide-definition (metal-zero) patterns, at least one cut metal layer (CMD) pattern; and at least one via region. The base layout cell can be implemented in at least two non-identical functional cells. A first functional cell of the at least two non-identical functional cells includes first interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a first layout, and a second functional cell of the at least two non-identical functional cells includes second interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a second layout.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.