Abstract: A method for performing system power control within an electronic device and an associated apparatus are provided. The method includes the steps of: utilizing a power consumption index generator positioned in a specific subsystem to generate a power consumption index corresponding to the specific subsystem, where the electronic device includes a plurality of subsystems, and the specific subsystem is one of the plurality of subsystems; and triggering a power limiter protection operation for the electronic device according to the power consumption index. For example, the power consumption index corresponding to the specific subsystem may represent a power consumption value of the specific subsystem, and the method may further include: comparing the power consumption value of the specific subsystem with a peak power threshold to determine whether the power consumed by the specific subsystem reaches the peak power threshold to generate a determining result, for triggering the power limiter protection operation.

Abstract: A method for manufacturing a semiconductor structure comprises the following steps. First, a recess is formed in a substrate. At least one wet cleaning process is performed to the recess and the substrate. Then, a baking process is performed to the recess and the substrate in an atmosphere containing H2 gas. After the baking process, a dry cleaning process is performed the recess and the substrate.

Abstract: A controller coupled to a plurality of hardware modules is arranged for determining activities of at least two of the hardware modules in real time, and determining a voltage and a frequency for one of the hardware modules according to the activities of the at least two of the hardware modules.

Abstract: A handle assembly for a luggage includes a grip unit, a button unit and a crank unit. The button unit includes a left push and a right push button. The crank unit includes a left crank having a first end provided with a left resting section abutting the left push button and a second end provided with a left ratchet section, a right crank having a first end provided with a right resting section abutting the right push button and a second end provided with a right ratchet section engaging the left ratchet section. Thus, the button unit includes two push buttons mounted on two opposite ends of the grip unit, so that the button unit will not be touched or pressed by the user, thereby preventing the handle assembly from being unlocked inadvertently.

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate, a gate structure on the substrate, a spacer adjacent to the gate structure, an epitaxial layer in the substrate adjacent to two sides of the spacer, and a dislocation embedded within the epitaxial layer. Preferably, the top surface of the epitaxial layer is lower than the top surface of the substrate, and the top surface of the epitaxial layer has a V-shape.

Abstract: A method for performing system power budgeting within an electronic device and an associated apparatus are provided. The method includes the steps of: utilizing a power consumption index generator positioned in a specific subsystem to generate a power consumption index corresponding to the specific subsystem, where the electronic device includes a plurality of subsystems, and the specific subsystem is one of the plurality of subsystems; and performing configuration adjustment on at least one portion of the electronic device according to the power consumption index corresponding to the specific subsystem.

Abstract: The present disclosure provides a heating handle structure and method of manufacturing the same. The heating handle structure includes an inner tube, a metal wire, an electric conductive substrate, a light-permeable seat, a circuit substrate and an outer sleeve. The metal wire surrounds the inner tube, and is connected to the electric conductive substrate. The electric conductive substrate is positioned on the inner tube. The light-permeable seat is disposed at the inner tube. The circuit substrate is disposed on the light-permeable seat. The circuit substrate and the electric conductive substrate are electrically connected. The outer sleeve covers the inner tube. Accordingly, the handle is able to generate heat when the metal wire received electricity, and is able to be maintained at constant temperature by the control of the circuit substrate. The light from the circuit substrate can pass through the light-permeable seat to provide visual effect to users.

Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.

Abstract: A method of incentivizing secure transactions that includes receiving future travel location data and future travel time data. The method includes determining bonus multiplier information based on the travel details, where the bonus multiplier information is indicative of a bonus multiplier. The method includes transmitting the bonus multiplier information to a user computing device. The method includes receiving a transaction authorization request associated with a transaction. The transaction authorization request includes transaction location data and transaction time data, and the transaction authorization request includes a transaction amount. The method includes verifying that the transaction location data matches the travel location data and that the transaction time data matches the travel time data. The method includes transmitting an authorization response via the payment network and determining a new rewards points amount by applying the bonus multiplier to the transaction amount.

Abstract: A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

Abstract: A method for performing system power budgeting within an electronic device and an associated apparatus are provided. The method includes the steps of: utilizing a power consumption index generator positioned in a specific subsystem to generate a power consumption index corresponding to the specific subsystem, where the electronic device includes a plurality of subsystems, and the specific subsystem is one of the plurality of subsystems; and performing configuration adjustment on at least one portion of the electronic device according to the power consumption index corresponding to the specific subsystem.

Abstract: A manufacturing method of a semiconductor structure is provided. The manufacturing method of the semiconductor structure includes the following steps: providing a substrate; forming a gate structure on the substrate; forming a recess in the substrate at a lateral side of the gate structure; performing a pre-bake process at a temperature of 740-840° C. and under a pressure of equal to or higher than 150 torr; and forming an epitaxial buffer layer in the recess.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a first conductive type well region; a gate structure; a lightly-doped drain region and a lightly-doped source region disposed at two opposite sides of the gate structure; a second conductive type first doped region disposed in the lightly-doped drain region, wherein the doping concentration of the second conductive type first doped region is less than the doping concentration of the lightly-doped drain region; a heavily-doped source region disposed in the lightly-doped source region; and a heavily-doped drain region disposed in the second conductive type first doped region. The present disclosure also provides a method for manufacturing the semiconductor device.

Abstract: Methods for forming semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a hard mask structure over a substrate and etching the substrate through an opening of the hard mask structure to form a trench. The method for manufacturing a semiconductor structure further includes removing a portion of the hard mask structure to enlarge the opening and forming an epitaxial-growth structure in the trench and the opening.

Abstract: A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided into a source electrode and a drain electrode. A portion of the organic semiconductor layer is exposed between the source electrode and the drain electrode. The conductive oxidation surface directly contacts with the organic semiconductor layer.

Abstract: A power purchasing system, a method thereof and a computer readable storage medium are provided. The power purchasing system includes a storage element and a processor. The storage element stores a demanded quantity (indicating the total power to be saved), a projected quantity and an acceptable purchase price of each user. The processor calculates a supply quantity (indicating the power needed to be saved) of each user and a rebate corresponding to the supply quantity according to a present purchase price, a present demanded quantity, a power saving efficiency of each user, a present projected quantity and acceptable purchase price. Accordingly, the user acquires a reasonable rebate by a fair auction and the power generation side saves the needed power by a fair auction similarly.

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate, a gate structure on the substrate, a spacer adjacent to the gate structure, an epitaxial layer in the substrate adjacent to two sides of the spacer, and a dislocation embedded within the epitaxial layer. Preferably, the top surface of the epitaxial layer is lower than the top surface of the substrate, and the top surface of the epitaxial layer has a V-shape.

Abstract: The present disclosure concerns embodiments of a polymeric compound, embodiments of a method for making and using the disclosed polymeric compound, and embodiments of a polymerizable composition. The polymeric compound is formed via photopolymerization of a photoinitiator and various polymerizable monomers. The disclosed polymeric compound and its components are useful as biomaterials, photolithography, and other applications. In particular disclosed embodiments, the photoinitiator comprises one or more chromophores capable of absorbing energy at particular wavelengths suitable for promoting formation of a carbanion capable of reacting with a polymerizable monomer.

Abstract: A mobile communication device with an antenna is disclosed. A portion of a metal cover of the mobile communication device can function as an extension of a radiator of the antenna, and the installation of a pair of filters can prevent interference between the low frequency antenna and another antenna. The design of the present invention expands the sensing range of the antenna.

Abstract: A portable electronic device includes an antenna unit, a processor, a circuit board and a frequency switching circuit. The antenna unit includes a pin. The processor includes a signal control terminal to output a voltage control signal. The frequency switching circuit is disposed on the circuit board and connected to the signal control terminal and the pin, so as to switch the frequency of the antenna unit according to the voltage control signal. The frequency switching circuit includes a switch unit and an anti-noise unit. The switch unit is connected to the pin, and the anti-noise unit is connected to the signal control terminal and the switch unit.