Abstract: In various example embodiments, a system and method for structuring search results for attribute comparison are presented. A product selection from a user device is received. The product selection has a plurality of attributes associated with it. A plurality of adjustable sliders configured to allow the user to refine a search is generated and caused to be displayed in a user interface of the user device. One or more adjustment of the plurality of adjustable sliders is received. In response to the user to an adjustment made to a first adjustable slider of the plurality of adjustable sliders, an analysis of a networked database for search results that match values indicated by the plurality of adjustable sliders including the adjustment made to the first adjustable slider is performed. The search results are caused to be presented on the user interface displayed on the user device. The search results can be in example form of a multi-dimensional graph or list.

Abstract: Method and apparatus are provided for thermal management of mobile devices. In one novel aspect, a throttle method is used to control the fast rising temperature for the device. In one embodiment, the thermal management method determines a temperature of the mobile device and compares the temperature with a plurality of predefined temperature thresholds. The thermal management applies a first throttle solution upon detecting the temperature reaches a first predefined temperature threshold and applies a second throttle solution upon detecting the temperature reaches a second predefined temperature threshold. In one embodiment, the first and the second throttle solutions control the slope of the rising temperature to be below a first predefined slope and a second predefined slope, respectively. In one embodiment, the temperature is controlled by adjusting the operating frequency and/or voltage of at least one heat-generating component of the mobile device.

Abstract: A manufacturing method of a semiconductor structure is provided. The manufacturing method of the semiconductor structure includes the following steps: providing a substrate; forming a gate structure on the substrate; forming a recess in the substrate at a lateral side of the gate structure; performing a pre-bake process at a temperature of 740-840° C. and under a pressure of equal to or higher than 150 torr; and forming an epitaxial buffer layer in the recess.

Abstract: Method and apparatus are provided for thermal management of mobile devices. In one novel aspect, a micro-throttle method is used to control the fast rising temperature for the device. In one embodiment, the thermal management method determines a temperature of the mobile device and compares the temperature with a plurality of predefined temperature thresholds. The thermal management applies a first micro-throttle solution upon detecting the temperature reaches a first predefined temperature threshold and applies a second micro-throttle solution upon detecting the temperature reaches a second predefined temperature threshold. In one embodiment, the first and the second micro-throttle solution control the slope of the rising temperature to be below a first predefined slope and a second predefined slope, respectively. In one embodiment, the temperature is controlled by adjusting the operating frequency or voltage of at least one heat-generating component of the mobile device.

Abstract: The present disclosure encompasses immunogenic/therapeutic compositions including Globo H-KLH glycoconjugates (OBI-822) and/or therapeutic adjuvants (OBI-821/OBI-834) as well as methods of making and using the same to treat proliferative diseases such as cancer. The therapeutic conjugates include an antigen linked to a carrier. In particular the therapeutic conjugates include a Globo H moiety and a KLH moiety and/or a derivatized KLH moiety subunit optionally linked via a linker. The therapeutic compositions are in part envisaged to act as cancer vaccines for boosting the body's natural ability to protect itself, through the immune system from dangers posed by damaged or abnormal cells such as cancer cells. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a gate structure on the substrate; (c) performing a first deposition process to form a first epitaxial layer adjacent to the gate structure and performing a first etching process to remove part of the first epitaxial layer at the same time; and (d) performing a second etching process to remove part of the first epitaxial layer.

Abstract: A portable electronic device includes an antenna unit, a processor, a circuit board and a frequency switching circuit. The antenna unit includes a pin. The processor includes a signal control terminal to output a voltage control signal. The frequency switching circuit is disposed on the circuit board and connected to the signal control terminal and the pin, so as to switch the frequency of the antenna unit according to the voltage control signal. The frequency switching circuit includes a switch unit and an anti-noise unit. The switch unit is connected to the pin, and the anti-noise unit is connected to the signal control terminal and the switch unit.

Abstract: A mobile communication device with an antenna is disclosed. A portion of a metal cover of the mobile communication device can function as an extension of a radiator of the antenna, and the installation of a pair of filters can prevent interference between the low frequency antenna and another antenna. The design of the present invention expands the sensing range of the antenna.

Abstract: A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.

Abstract: A thin file transistor includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide semiconductor layer includes indium-gallium-zinc oxide with a formula of InxGayZnzOw, in which x, y and z satisfy the following formulas 1.5?(y/x)?2 and 1.5?(y/z)?2. The gate-insulating layer is positioned between the gate electrode and the oxide semiconductor layer. The source electrode and the drain electrode are respectively connected to two different sides of the oxide semiconductor layer.

Abstract: A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.

Abstract: A method for performing system power budgeting within an electronic device and an associated apparatus are provided. The method includes the steps of: utilizing a power consumption index generator positioned in a specific subsystem to generate a power consumption index corresponding to the specific subsystem, where the electronic device includes a plurality of subsystems, and the specific subsystem is one of the plurality of subsystems; and performing configuration adjustment on at least one portion of the electronic device according to the power consumption index corresponding to the specific subsystem.

Abstract: Paper, as a ubiquitous material in everyday life, has recently emerged as flexible substrates for electronics. It offers a basis for functional electronic modules with advantages of low cost, ease of fabrication, good printability, high flexibility, and light weight. To date, functional electronic components on paper and paper-like substrates have included diodes, transistors, capacitors, electrochemical biosensors and micro-electro-mechanical systems (MEMS). Accordingly, paper-based flexible sensors and electronics may be applied to a wide range of applications including flexible displays, energy storage, self-folding robotics, and biosensing. These may be further expanded through provisioning of a paper-based human-device interface that allows users to input information. By exploiting piezoelectric nanowires grown upon paper, a range of one- and two-dimensional haptic interfaces may be implemented.

Abstract: A method for performing system power control within an electronic device and an associated apparatus are provided. The method includes the steps of: utilizing a power consumption index generator positioned in a specific subsystem to generate a power consumption index corresponding to the specific subsystem, where the electronic device includes a plurality of subsystems, and the specific subsystem is one of the plurality of subsystems; and triggering a power limiter protection operation for the electronic device according to the power consumption index. For example, the power consumption index corresponding to the specific subsystem may represent a power consumption value of the specific subsystem, and the method may further include: comparing the power consumption value of the specific subsystem with a peak power threshold to determine whether the power consumed by the specific subsystem reaches the peak power threshold to generate a determining result, for triggering the power limiter protection operation.

Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.

Abstract: The present invention provides vaccines comprising carbohydrate antigen conjugated to a diphtheria toxin (DT) as a carrier protein, wherein the ratio of the number of carbohydrate antigen molecule to the carrier protein molecule is higher than 5:1. Also disclosed herein is a novel saponin adjuvant and methods to inhibit cancer cells, by administering an effective amount of the vaccine disclose herein.

Abstract: A touch device for dynamically setting a touch inactive area includes a storage unit, an identification unit, a touchscreen unit and a processing unit. The touchscreen unit presents an operation interface and a plurality of function keys provided thereby, each function key corresponding to a display area and a function. The identification unit generates feature data on the basis of a specific user. The processing unit obtains inactive area setting data by user data stored in the storage unit which corresponding to the feature data to set at least one touch inactive area on the touchscreen unit. However, when a function key corresponding to a display area overlapped with the touch inactive area is touched on the touchscreen unit, a corresponding function will not be activated.

Abstract: An Enterococcus faecium EF08 strain for manufacturing a feed additive is disclosed. The EF08 strain is deposited at Bioresource Collection and Research Center of Taiwan with deposit number BCRC 910525. Also, the EF08 strain is deposited at CGMCC-China General Microbiological Culture Collection with deposit number CGMCC 5549. Moreover, the EF08 strain has a 16S rDNA sequence as set forth as SEQ ID NO: 1.