Patents by Inventor Hua Sun

Hua Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210117626
    Abstract: Techniques are provided for training, by a system operatively coupled to a processor, an attention weighted recurrent neural network encoder-decoder (AWRNNED) using an iterative process based on one or more paragraphs of agent sentences from respective transcripts of one or more conversations between one or more agents and one or more customers, and based on one or more customer response sentences from the respective transcripts, and generating, by the system, one or more groups respectively comprising one or more agent sentences and one or more customer response sentences selected based on attention weights of the AWRNNED.
    Type: Application
    Filed: December 24, 2020
    Publication date: April 22, 2021
    Inventors: Ke Ke Cai, Jing Ding, Zhong Su, Chang Hua Sun, Li Zhang, Shi Wan Zhao
  • Patent number: 10937806
    Abstract: Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.
    Type: Grant
    Filed: May 5, 2020
    Date of Patent: March 2, 2021
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Qian Tao, Yushi Hu, Zhenyu Lu, Li Hong Xiao, Xiaowang Dai, Yu Ting Zhou, Zhao Hui Tang, Mei Lan Guo, ZhiWu Tang, Qinxiang Wei, Qianbing Xu, Sha Sha Liu, Jian Hua Sun, EnBo Wang
  • Publication number: 20210050446
    Abstract: Embodiments of counter-stress structures and methods for forming the same are disclosed. The present disclosure describes a semiconductor wafer including a substrate having a dielectric layer formed thereon and a device region in the dielectric layer. The device region includes at least one semiconductor device. The semiconductor wafer further includes a sacrificial region adjacent to the device region, wherein the sacrificial region includes at least one counter-stress structure configured to counteract wafer stress formed in the device region.
    Type: Application
    Filed: November 2, 2020
    Publication date: February 18, 2021
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Jian Hua SUN, Sizhe LI, Ji XIA, Qinxiang WEI
  • Patent number: 10902205
    Abstract: Techniques are provided for training, by a system operatively coupled to a processor, an attention weighted recurrent neural network encoder-decoder (AWRNNED) using an iterative process based on one or more paragraphs of agent sentences from respective transcripts of one or more conversations between one or more agents and one or more customers, and based on one or more customer response sentences from the respective transcripts, and generating, by the system, one or more groups respectively comprising one or more agent sentences and one or more customer response sentences selected based on attention weights of the AWRNNED.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: January 26, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ke Ke Cai, Jing Ding, Zhong Su, Chang Hua Sun, Li Zhang, Shi Wan Zhao
  • Patent number: 10825929
    Abstract: Embodiments of counter-stress structures and methods for forming the same are disclosed. The present disclosure describes a semiconductor wafer including a substrate having a dielectric layer formed thereon and a device region in the dielectric layer. The device region includes at least one semiconductor device. The semiconductor wafer further includes a sacrificial region adjacent to the device region, wherein the sacrificial region includes at least one counter-stress structure configured to counteract wafer stress formed in the device region.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: November 3, 2020
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Jian Hua Sun, Sizhe Li, Ji Xia, Qinxiang Wei
  • Publication number: 20200317025
    Abstract: An air conditioner energy-saving inflatable device is adapted to be disposed in a vehicle body. The air conditioner energy-saving inflatable device includes an air pump, an air bag, a circuit board and a sensor. The air bag is connected to the air pump and adapted to be disposed beside an area in the vehicle body. The circuit board is electrically connected to the air pump and includes a controller. When an air-conditioning system of the vehicle body is activated, the sensor is adapted to sense whether the area is vacant. When the sensor senses that the area is vacant, the controller instructs the air pump to inflate the air bag, so that the air bag fills at least a portion of the area. When the air-conditioning system of the vehicle body stops running, the air bag is deflated. A vehicle is also provided.
    Type: Application
    Filed: January 15, 2020
    Publication date: October 8, 2020
    Applicant: GIGA-BYTE TECHNOLOGY CO., LTD.
    Inventor: Pei-Hua Sun
  • Publication number: 20200266211
    Abstract: Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.
    Type: Application
    Filed: May 5, 2020
    Publication date: August 20, 2020
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Qian TAO, Yushi Hu, Zhenyu Lu, Li Hong Xiao, Xiaowang Dai, Yu Ting Zhou, Zhao Hui Tang, Mei Lan Guo, ZhiWu Tang, Qinxiang Wei, Qianbing Xu, Sha Sha Liu, Jian Hua Sun, EnBo Wang
  • Publication number: 20200227555
    Abstract: Embodiments of counter-stress structures and methods for forming the same are disclosed. The present disclosure describes a semiconductor wafer including a substrate having a dielectric layer formed thereon and a device region in the dielectric layer. The device region includes at least one semiconductor device. The semiconductor wafer further includes a sacrificial region adjacent to the device region, wherein the sacrificial region includes at least one counter-stress structure configured to counteract wafer stress formed in the device region.
    Type: Application
    Filed: May 13, 2019
    Publication date: July 16, 2020
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Jian Hua Sun, Sizhe Li, Ji Xia, Qinxiang Wei
  • Patent number: 10671686
    Abstract: A method, apparatus and system for processing webpage data. The method includes: in response to a webpage being opened, sending a link contained in the webpage to a network side device; receiving a group identification from the network side device, the group identification being determined by the network side device according to the link and used to specify a group the link belongs to; determining whether there is a browsed link belonging to the group specified by the group identification; and in response to determining there is a browsed link belonging to the group specified by the group identification, prompting that webpage content pointed by the link contained in the webpage has been browsed.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: June 2, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Sheng Hua Bao, Dong Xu Duan, Wei Hong Qian, Chang Hua Sun
  • Publication number: 20200155550
    Abstract: The present invention provides a compound as shown in general formulas (I) or (II) and a pharmaceutically acceptable salt, an isomer or a mixture form thereof, a solvate, a polymorph, a stable isotope derivative, or a prodrug of the same. The compound of the present invention has CDK kinase inhibitory activity and can be used in treating a disease related to CDK kinase, such as a cancer.
    Type: Application
    Filed: May 7, 2018
    Publication date: May 21, 2020
    Inventors: Fuyao ZHANG, Xianjie CHEN, Weijun FANG, Hua SUN
  • Patent number: 10658378
    Abstract: Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: May 19, 2020
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Qian Tao, Yushi Hu, Zhenyu Lu, Li Hong Xiao, Xiaowang Dai, Yu Ting Zhou, Zhao Hui Tang, Mei Lan Guo, ZhiWu Tang, Qinxiang Wei, Qianbing Xu, Sha Sha Liu, Jian Hua Sun, Enbo Wang
  • Patent number: 10626079
    Abstract: Disclosed is a method for preparing high-quality anhydrous choline halide single crystal and its derivatives. The single crystal product has good stability of light and heat. It also has the advantages of moisture resistant, deliquescent resistance and is not easy to agglomerate. The method is simple in operation. The solvent used in the process is difficult to volatilize and can be recycled.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: April 21, 2020
    Assignee: HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Erhong Duan, Shaohan Lian, Zidan Chen, Hongwei Ren, Hua Sun, Jianrui Niu
  • Publication number: 20200119031
    Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes gate layers and insulating layers that are stacked alternatingly along a first direction perpendicular to a substrate of the semiconductor device in a first region upon the substrate. The gate layers and the insulating layers are stacked of a stair-step form in a second region. The semiconductor device includes a channel structure that is disposed in the first region. The channel structure and the gate layers form a stack of transistors in a series configuration with the gate layers being gates for the transistors. The semiconductor device includes a contact structure disposed in the second region, and a first dummy channel structure disposed in the second region and around the contact structure. The first dummy channel structure is patterned with a first shape that is different from a second shape of the channel structure.
    Type: Application
    Filed: March 28, 2019
    Publication date: April 16, 2020
    Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Miao Shen, Li Hong Xiao, Yushi Hu, Qian Tao, Mei Lan Guo, Yong Zhang, Jian Hua Sun
  • Patent number: 10623582
    Abstract: A switch device for use in a gateway equipment and a gateway equipment comprising the switch device are suggested. The suggested switch comprises a Foreign Exchange Station (FXS) port configured to be connected to a telephone set, a Foreign Exchange Office (FXO) port connected to communicate analog voice signals with an external network, and a Voice over Internet Protocol (VOIP) unit configured to communicate digital data signals with the external network and enable a VOIP call using the digital data signals. The switch device comprises a switch configured to, when the gateway equipment is power down, connect the FXS port to the FXO port. The switch device also comprises a power unit configured to generate a work voltage from the analog voice signals at the FXO port to provide a power supply to the switch.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: April 14, 2020
    Assignee: InterDigital CE Patent Holdings, SAS
    Inventors: Qi Li, Wei He, Ai hua Sun
  • Patent number: 10605761
    Abstract: A electrochemical biosensor based on an aptamer/nano silver probe and an EXO I enzyme. Nano silver nanoparticles having the functions of identifying a target object and generating electrochemical signals and modified by an aptamer are used as a biological probe for detecting target biomolecules, under the initiation of the target object and the assistance of a complementary probe and the EXO I enzyme cyclic shear amplification, and by means of the DNA complementary pairing principle, the probe can be gathered on the surface of a gold electrode, the larger the concentration of the target biomolecules is, the larger the gathering degree of the induced aptamer/nano silver probe is, and meanwhile an EXO I exonuclease target cyclic amplification strategy is introduced in the identification process of the target object, so that the electrochemical biosensor can sensitively and efficiently detect target biological substances.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: March 31, 2020
    Assignee: QINGDAO UNIVERSITY
    Inventors: Jianfei Xia, Xiyue Cao, Zonghua Wang, Hua Sun
  • Publication number: 20200091436
    Abstract: The invention relates to a 9,10-dihydro-acridine derivative having a structure of Formula (I). The HOMO and LUMO levels of the 9,10-dihydro-acridine derivative are distributed on different electron donating and electron withdrawing groups, such that the HOMO and LUMO levels are separated, achieving a small ?EST. The 9,10-dihydro-acridine derivative can be used as a TADF material in an organic light-emitting device. The dihydro-acridinyl group in the electron donating group is linked to a dibenzoheterocyclic ring. Introducing modifying groups allows adjustment of triplet and singlet energy levels of the compound, enabling the TADF material to have a high luminescence efficiency in blue and deep blue regions. The invention also relates to an organic light-emitting device having at least one functional layer containing the 9,10-dihydro-acridine derivative. When the compound is used as a guest luminescent material in a light emitting layer, an OLED device of high blue light emitting efficiency is obtained.
    Type: Application
    Filed: January 30, 2019
    Publication date: March 19, 2020
    Inventors: Hua SUN, Wenming ZHU, Zhi Kuan CHEN
  • Publication number: 20200091437
    Abstract: The present invention discloses a 9,10-dihydro-acridine derivative having a structure of Formula (I). The compound has a suitable HOMO energy level that matches that of an anode and light emitting layer when used as a material of a hole transport layer, thus reducing the potential barrier needed to overcome when holes are transported to the light emitting layer, and reducing the operating voltage of the device. Moreover, the 9,10-dihydro-acridine derivative has high triplet energy level and LUMO level, to avoid the returning of energy from the light emitting layer, retain the electrons in the light emitting layer, increase the probability of recombination of electrons and holes in the light emitting layer, and enhance the luminescence efficiency of the device. The compound of Formula (I) has high glass transition temperature, good film forming performance, and high thermal stability.
    Type: Application
    Filed: January 30, 2019
    Publication date: March 19, 2020
    Inventors: Hua SUN, Wenming ZHU, Kunshan XIE, Zhi Kuan CHEN
  • Patent number: 10572585
    Abstract: This disclosure provides a computer-implemented method. The method may include extracting one or more features based on a first utterance from a first interlocutor in a dialog and a second utterance from a second interlocutor in the dialog. The method may further include inferring one or more personality traits of the first interlocutor based on the one or more extracted features from the dialog.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: February 25, 2020
    Assignee: International Business Machines Coporation
    Inventors: En Liang Xu, Chang Hua Sun, Shi Wan Zhao, Ke Ke Cai, Yue Chen, Li Zhang, Zhong Su
  • Publication number: 20200039918
    Abstract: Disclosed is a method for preparing high-quality anhydrous choline halide single crystal and its derivatives. The single crystal product has good stability of light and heat. It also has the advantages of moisture resistant, deliquescent resistance and is not easy to agglomerate. The method is simple in operation. The solvent used in the process is difficult to volatilize and can be recycled.
    Type: Application
    Filed: April 28, 2017
    Publication date: February 6, 2020
    Inventors: Erhong DUAN, Shaohan LIAN, Zidan CHEN, Hongwei REN, Hua SUN, Jianrui NIU
  • Publication number: 20200006668
    Abstract: The invention relates to a fused cyclic compound having a structure of Formula in the fused cyclic compound by controlling effective conjugation of aromatic and heterocyclic rings. Electron transport performance is balanced while hole performance of fused cyclic compound improves. The compound has high triplet energy level and glass transition temperature. The material molecule isn't prone to crystallization. The compound ensures transfer of energy to a guest material. Adjusting substituents of fused cyclic compound improves electron and hole transport performances, reduces difference between singlet and triplet energy levels, broadens recombination region of carriers, and prevents triplet-triplet exciton annihilation. An organic light-emitting device contains the fused cyclic compound. The compound is used as a host material in a light emitting layer.
    Type: Application
    Filed: January 30, 2019
    Publication date: January 2, 2020
    Inventors: Hua SUN, Zhi Kuan CHEN