Abstract: A semiconductor device includes a first integrated circuit, a bridge die, and a redistribution layer (RDL) structure. The first integrated circuit includes a first interconnect structure, a first passivation layer and a first conductive connector electrically connected to the first interconnect structure and disposed on the first passivation layer. The bridge die bridge die includes a second interconnect structure, a second passivation layer and a second conductive connector electrically connected to the second interconnect structure. The RDL structure is disposed between and electrically connected to the first integrated circuit and the bridge die, wherein the first passivation layer is in direct contact with the first conductive connector, the first conductive connector is in direct contact with the RDL structure, and the first passivation layer is a single layer and includes a first inorganic material.

Abstract: The embodiments of the disclosure provide a method for hand tracking. The method includes following steps. A first image of a hand is obtained through a head-mounted device. A first pose of a first part of the hand is determined through a processor based on the first image. A second image of the hand is obtained through a hand-held device. A second pose of a second part of the hand is determined through a processor based on the first image. The first part and the second part complementarily form an entirety of the hand. A gesture of the hand is determined through the processor based on the first pose and the second pose.

Abstract: A magnetic memory device includes multiple perpendicular spin-orbit torque (SOT) elements and multiple stray field applying layers. Each of the perpendicular SOT elements at least includes a first electrode, a second electrode, and a magnetic tunnel junction (MTJ). The MTJ is disposed on the first electrode, and the second electrode is disposed on the MTJ. The stray field applying layers are disposed between the perpendicular SOT elements, and each of the stray field applying layers extends horizontally between the first electrode and the second electrode. These layers generate the magnetic field required to flip the free layer during SOT, eliminating the need for an additional magnetic field during reading and writing. Additionally, the stray field applying layer horizontally disposed on two sides of the MTJ doesn't increase device height, allowing reduction of write current without increasing the read current resistance, thus reducing the power consumption.

Abstract: A package includes a first die over and bonded to a first side of a package component, where a first bond between the first die and the package component includes a dielectric-to-dielectric bond between a first bonding layer of the first die and a second bonding layer on the package component, and second bonds between the first die and the package component include metal-to-metal bonds between first bonding pads of the first die and second bonding pads on the package component, a first portion of a redistribution structure adjacent to the first die and over the second bonding layer, and a second die over and coupled to the first portion of the redistribution structure using first conductive connectors, where the first conductive connectors are electrically connected to first conductive pads in the second bonding layer.

Abstract: A wall mount assembly includes a device and a wall mount bracket. The device includes a first positioning structure. The wall mount bracket includes a first bracket, a second bracket and a blocking member. The second bracket is connected to the first bracket. The second bracket includes a second positioning structure. The blocking member is disposed on the first bracket. The first positioning structure is movably disposed on the second positioning structure. When the device is located at a release position, the first positioning structure is detachably disposed at the second positioning structure. When the device is moved to a fixing position, the blocking member contacts the device, and the first positioning structure is engaged with the second positioning structure.

Abstract: A magnetic random access memory (MRAM) structure is provided. The MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack includes a first free layer disposed on the first write electrode, a first tunnel barrier layer disposed on the first free layer, and a first fixed layer disposed on the first tunnel barrier layer. The voltage control electrode is disposed on the first MTJ stack. The second MTJ stack includes a second fixed layer disposed on the voltage control electrode, a second tunnel barrier layer disposed on the second fixed layer, and a second free layer disposed on the second tunnel barrier layer. The second write electrode is disposed on the second MTJ stack.

Abstract: A package structure includes a frontside redistribution layer (RDL) structure with a recessed portion, a lower encapsulation layer on the frontside RDL structure and a plurality of through vias connected to the frontside RDL structure to an upper package, a first semiconductor die on the frontside RDL structure and in the lower encapsulation layer, and an integrated passive device (IPD) connected to the frontside RDL structure in the recessed portion that connects to the first semiconductor die. A method of forming a package structure includes forming a molded portion with a lower encapsulation layer, a plurality of through vias in the lower encapsulation layer and a first semiconductor die in the lower encapsulation layer, forming a RDL structure with a recessed portion on the molded portion, the plurality of through vias connect the frontside RDL structure to an upper package, and attaching an IPD in the recessed portion.

Abstract: In a semiconductor package having a redistribution structure, two or more semiconductor dies are connected to a first side of the redistribution structure and an encapsulant surrounds the two or more semiconductor dies. An integrated passive device (IPD) is connected on a second side of the redistribution structure. The second side is opposite to the first side and the IPD is electrically coupled to the redistribution structure. An interconnect device is connected on the second side of the redistribution structure and is electrically coupled to the redistribution structure. Two or more external connections are on the second side of the redistribution structure and are electrically coupled to the redistribution structure.

Abstract: A method includes forming a metal pad, depositing a passivation layer on the metal pad, and planarizing the passivation layer, so that the passivation layer includes a planar top surface. The method further includes etching the passivation layer to form an opening in the passivation layer, wherein the metal pad is exposed to the opening, and forming a conductive via including a lower portion in the opening, and an upper portion higher than the passivation layer. A polymer layer is then dispensed to cover the conductive via.

Abstract: The disclosure provides a display device and an operation method thereof. The display device includes a display panel and a driving circuit. The display panel has at least one native conductive line for a display driving operation. The driving circuit is coupled to the at least one native conductive line. During a display driving period, the driving circuit performs the display driving operation on the display panel through the at least one native conductive line. During a heating period, the driving circuit performs a heating operation on the display panel through the at least one native conductive line.

Abstract: A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.

Abstract: A management method for multiple communication devices, wherein the multiple communication devices include a host device and a first peripheral device configured to electrically connect to a device platform, and the management method includes: by the host device, detecting a connection of the first peripheral device through the device platform; by the host device, receiving a first device identifier provided by the first peripheral device through the device platform; by the host device, storing the first device identifier in the host device; and by the host device, wirelessly pairing the host device with the first peripheral device, according to the first device identifier stored in the host device, to enable a first wireless communication between the host device and the first peripheral device.

Abstract: A lithography system includes an immersion lithographic apparatus, a fluid supply device, and a sensor. The fluid supply is configured to supply fluid to the immersion lithographic apparatus. The fluid supply device includes at least one liquid storage tank, an upper liquid pipe and a lower liquid pipe connected to the liquid storage tank. The sensor includes at least one hydraulic pressure gauge. The at least one hydraulic pressure gauge is arranged near a lower part of the liquid storage tank and connected to the lower liquid pipe and the upper liquid pipe so as to measure the hydraulic pressure at a bottom of the liquid storage tank. The height of the liquid level in the liquid storage tank is calculated from the hydraulic pressure.

Abstract: The disclosure provides a device and a method for testing mechanical properties of a material under a high rotation speed and a high temperature. A sample chuck is installed on a main shaft of a centrifugal machine and rotates synchronously. A test sample is installed on the sample chuck. The induction heating system is installed on the centrifugal machine and does not rotate. The induction heating system is connected to a circulating water cooling system. A temperature controlling system is connected to the circulating water cooling system and the test sample. Parameters of the centrifugal machine, the test sample, etc. are determined. A temperature-controlling thermocouple and a strain gauge are installed on a standard section. A rotation speed of the centrifugal machine reaches the speed and is maintained until it breaks. Data is collected, and then the centrifugal machine is turned off and air-cooled to a room temperature.

Abstract: A controller includes a body and a surrounding part. The body has a control area for sending a control signal according to a movement of a thumb of a user. The surrounding part is connected to the body and used to surround and be fixed to a proximal phalange of an index finger of the user. The body is away from a joint between the proximal phalange and a metacarpal bone of the user.

Abstract: A semiconductor die and methods of forming the same and a package structure are provided. The semiconductor die includes a semiconductor substrate, a plurality of conductive pads over the semiconductor substrate, a passivation layer over the semiconductor substrate and partially covering the plurality of conductive pads, an interconnecting line disposed on the passivation layer, and a plurality of connectors disposed on and electrically connected to the plurality of conductive pads. Each of the plurality of connectors includes a stacked structure of a first conductive pillar and a second conductive pillar disposed directly on the first conductive pillar, wherein a span of the second conductive pillar is smaller than a span of the first conductive pillar, and an orthogonal projection of the second conductive pillar falls within an orthogonal projection of the first conductive pillar, and the interconnecting line is located beside and spaced apart from the plurality of connectors.

Abstract: A device includes a first die, an interconnect structure, a RDL layer, a guard structure and an underfill layer. The interconnect structure is electrically connected to the first die. The RDL layer is disposed in a dielectric layer. The guard structure is disposed in the dielectric layer to define a connector region, wherein the guard structure and the interconnect structure are disposed on opposite sides of the die. The underfill layer surrounds the interconnect structure, the first die and the guard structure, wherein the underfill layer is kept outside of the connector region by the guard structure.