Patents by Inventor Huan-Just Lin

Huan-Just Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12293910
    Abstract: A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer using a patterned mask layer to form an opening in the second dielectric layer, where the opening exposes the first conductive feature; performing an ashing process to remove the patterned mask layer after the etching; wet cleaning the opening after the ashing process, where the wet cleaning enlarges a bottom portion of the opening; and filling the opening with a first electrically conductive material.
    Type: Grant
    Filed: July 26, 2023
    Date of Patent: May 6, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Chuan Wang, Guan-Xuan Chen, Chia-Yang Hung, Sheng-Liang Pan, Huan-Just Lin
  • Patent number: 12293947
    Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.
    Type: Grant
    Filed: November 13, 2023
    Date of Patent: May 6, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Lien Huang, Ching-Feng Fu, Huan-Just Lin, Fu-Sheng Li, Tsai-Jung Ho, Bor Chiuan Hsieh, Guan-Xuan Chen, Guan-Ren Wang
  • Publication number: 20250143191
    Abstract: A magnetic tunnel junction (MTJ) memory cell comprising a connection via structure, a bottom electrode disposed on the connection via structure, a memory material stack disposed on the bottom electrode, and a conductive contact structure disposed on the memory material stack, in which a bottom surface of the conductive contact structure is in direct contact with a memory material layer of the memory material stack.
    Type: Application
    Filed: January 3, 2025
    Publication date: May 1, 2025
    Inventors: Hsing-Hsiang WANG, Jiann-Horng LIN, Yu-Feng YIN, Huan-Just LIN
  • Patent number: 12278277
    Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.
    Type: Grant
    Filed: February 16, 2024
    Date of Patent: April 15, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Liang Pan, Yung Tzu Chen, Chung-Chieh Lee, Yung-Chang Hsu, Chia-Yang Hung, Po-Chuan Wang, Guan-Xuan Chen, Huan-Just Lin
  • Patent number: 12272731
    Abstract: In some embodiments, the present disclosure relates to an integrated circuit device. A transistor structure is disposed over a substrate and includes a pair of source/drain regions and a gate electrode between the pair of source/drain regions. A lower inter-layer dielectric (ILD) layer is disposed over the pair of source/drain regions and surrounds the gate electrode. The gate electrode is recessed from top of the lower ILD layer. A gate capping layer is disposed on the gate electrode. The gate capping layer has a top surface aligned or coplanar with that of the lower ILD layer.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: April 8, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Lien Huang, Ching-Feng Fu, Huan-Just Lin
  • Patent number: 12268027
    Abstract: In some embodiments, the present disclosure relates to an integrated circuit device. A transistor structure is disposed over a substrate and includes a pair of source/drain regions and a gate electrode between the pair of source/drain regions. A lower inter-layer dielectric (ILD) layer is disposed over the pair of source/drain regions and surrounds the gate electrode. The gate electrode is recessed from top of the lower ILD layer. A gate capping layer is disposed on the gate electrode. The gate capping layer has a top surface aligned or coplanar with that of the lower ILD layer.
    Type: Grant
    Filed: August 4, 2023
    Date of Patent: April 1, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Lien Huang, Ching-Feng Fu, Huan-Just Lin
  • Publication number: 20250096043
    Abstract: A semiconductor device includes a channel structure, a first gate structure straddling the channel structure, and an epitaxial structure. The epitaxial structure is adjacent to the first gate structure and is coupled to an end of the channel structure. The semiconductor device further includes a first contact structure disposed over and in contact with the epitaxial structure and a nitride-based conformal layer extending at least over the first contact structure. The semiconductor device further includes an oxide-based layer disposed over the nitride-based conformal layer. A portion of the nitride-based conformal layer, disposed over the first contact structure, has a dip that is filled with a first portion of the oxide-based layer.
    Type: Application
    Filed: December 4, 2024
    Publication date: March 20, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Te-Chih Hsiung, Yi-Chen Wang, Guang-Hong Cheng, Wen Wang, Yuan-Tien Tu, Huan-Just Lin
  • Patent number: 12237228
    Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.
    Type: Grant
    Filed: June 30, 2023
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shao-Jyun Wu, Hung-Chi Wu, Chia-Ching Lee, Pin-Hsuan Yeh, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen, Sheng-Liang Pan, Huan-Just Lin
  • Publication number: 20250054885
    Abstract: Semiconductor structures and methods are provided. An exemplary method includes receiving a structure comprising a metal feature, a first passivation structure over the metal feature, and a first opening extending through the first passivation structure and exposing the metal feature. The exemplary method also includes forming a conductive layer in the first opening; forming a second passivation structure over the conductive layer, performing a first etching process to form a second opening extending through the second passivation structure and exposing the conductive layer, performing a second etching process to selectively remove an upper portion of the second passivation structure to enlarge an upper portion of the second opening, and after the performing of the second etching process, forming a conductive feature in the second opening.
    Type: Application
    Filed: January 4, 2024
    Publication date: February 13, 2025
    Inventors: Hsing-Hsiang Wang, Jiann-Horng Lin, Huan-Just Lin
  • Patent number: 12219882
    Abstract: A magnetic tunnel junction (MTJ) memory cell comprising a connection via structure, a bottom electrode disposed on the connection via structure, a memory material stack disposed on the bottom electrode, and a conductive contact structure disposed on the memory material stack, in which a bottom surface of the conductive contact structure is in direct contact with a memory material layer of the memory material stack.
    Type: Grant
    Filed: April 14, 2021
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Hsing-Hsiang Wang, Yu-Feng Yin, Jiann-Horng Lin, Huan-Just Lin
  • Patent number: 12205816
    Abstract: A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer using a patterned mask layer to form an opening in the second dielectric layer, where the opening exposes the first conductive feature; performing an ashing process to remove the patterned mask layer after the etching; wet cleaning the opening after the ashing process, where the wet cleaning enlarges a bottom portion of the opening; and filling the opening with a first electrically conductive material.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: January 21, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Chuan Wang, Guan-Xuan Chen, Chia-Yang Hung, Sheng-Liang Pan, Huan-Just Lin
  • Patent number: 12183633
    Abstract: A semiconductor device includes a channel structure, a first gate structure straddling the channel structure, and an epitaxial structure. The epitaxial structure is adjacent to the first gate structure and is coupled to an end of the channel structure. The semiconductor device further includes a first contact structure disposed over and in contact with the epitaxial structure and a nitride-based conformal layer extending at least over the first contact structure. The semiconductor device further includes an oxide-based layer disposed over the nitride-based conformal layer. A portion of the nitride-based conformal layer, disposed over the first contact structure, has a dip that is filled with a first portion of the oxide-based layer.
    Type: Grant
    Filed: November 23, 2021
    Date of Patent: December 31, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Te-Chih Hsiung, Yi-Chen Wang, Guang-Hong Cheng, Wen Wang, Yuan-Tien Tu, Huan-Just Lin
  • Publication number: 20240395607
    Abstract: A semiconductor device includes source/drain contacts, a gate structure, a gate dielectric cap, an etch stop layer, and a gate contact. The source/drain contacts are over a substrate. The gate structure is laterally between the source/drain contacts. The gate dielectric cap is over the gate structure and in contact with the source/drain contacts. The etch stop layer is over the source/drain contacts and the gate dielectric cap. The etch stop layer has an oxidized region directly above the gate dielectric cap. The gate contact extends through the etch stop layer and the gate dielectric cap to the gate structure. The gate contact and the oxidized region of the etch stop layer form an interface perpendicular to the substrate.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Te-Chih HSIUNG, Yi-Chun CHANG, Jyun-De WU, Yi-Chen WANG, Yuan-Tien TU, Huan-Just LIN
  • Publication number: 20240395536
    Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.
    Type: Application
    Filed: July 31, 2024
    Publication date: November 28, 2024
    Inventors: Chia-Yang Hung, Huan-Just Lin, Sheng-Liang Pan, Yungtzu Chen, Po-Chuan Wang, Guan-Xuan Chen
  • Patent number: 12154784
    Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.
    Type: Grant
    Filed: April 13, 2022
    Date of Patent: November 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Yang Hung, Huan-Just Lin, Sheng-Liang Pan, Yungtzu Chen, Po-Chuan Wang, Guan-Xuan Chen
  • Publication number: 20240387698
    Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a silicon oxycarbonitride spacer, a silicon oxycarbide spacer, a silicon nitride spacer, and a source/drain structure. The gate structure is on the semiconductor substrate. The silicon oxycarbonitride spacer is on a sidewall of the gate structure. The silicon oxycarbide spacer is on a sidewall of the silicon oxycarbonitride spacer. The silicon nitride spacer is on a sidewall of the silicon oxycarbide spacer, in which an upper portion of the silicon nitride spacer has a lower density than a lower portion of the silicon nitride spacer. The source/drain structure is on the semiconductor substrate and adjacent to the gate structure.
    Type: Application
    Filed: July 29, 2024
    Publication date: November 21, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sheng-Liang PAN, Yung-Tzu CHEN, Chung-Chieh LEE, Yung-Chang HSU, Chia-Yang HUNG, Po-Chuan WANG, Guan-Xuan CHEN, Huan-Just LIN
  • Publication number: 20240387517
    Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a gate electrode, a gate electrode contact layer over the gate electrode, forming a dielectric layer over the gate electrode contact layer, and performing an etch through the dielectric layer, the etch forming an opening that exposes the gate electrode contact layer. The method further includes performing a post-etch treatment on the opening formed by the etch process by exposing the opening to a plasma. The method further includes forming gate electrode contacts in the openings after the post-etch treatment by a bottom-up deposition process.
    Type: Application
    Filed: July 28, 2024
    Publication date: November 21, 2024
    Inventors: Po-Chuan Wang, Guan-Xuan Chen, Chia-Yang Hung, Sheng-Liang Pan, Huan-Just Lin
  • Publication number: 20240387178
    Abstract: A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 21, 2024
    Inventors: Shao-Jyun Wu, Sheng-Liang Pan, Huan-Just Lin
  • Publication number: 20240387278
    Abstract: A semiconductor device includes a first source/drain structure coupled to an end of a first conduction channel that extends along a first direction; a second source/drain structure coupled to an end of a second conduction channel that extends along the first direction; a first isolation structure extending into the interlayer dielectric, disposed between the first and second source/drain structures, and disposed next to a gate structure along the first direction; and a second isolation structure below the first and second conduction channels. The second isolation structure includes a shallow trench isolation structure.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Lien Huang, Ching-Feng Fu, Huan-Just Lin, Che-Ming Hsu
  • Patent number: 12148620
    Abstract: A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer.
    Type: Grant
    Filed: May 12, 2023
    Date of Patent: November 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shao-Jyun Wu, Sheng-Liang Pan, Huan-Just Lin