Abstract: Molded rubber objects may be molded and de-molded by defining both a desired final form for the molded rubber object and a tab extending from the final form of the molded rubber object using a cavity in a mold. Rubber pellets may be dispensed in predetermined amounts at desired location(s) within the cavity to provide the rubber needed to form the molded rubber object. Heat and pressure may be applied to the mold to cause the rubber pellets to fill the cavity defining both the desired final form of the molded rubber object and the tab. After the heat and pressure has been applied, a gripping device may grasp the tab and move the tab in a direction and with sufficient force to peel the rubber object from the mold cavity. If desired, the tab may be removed from the molded rubber object.

Abstract: One method disclosed herein includes, among other things, forming a process layer on a substrate, forming a carbon-containing silicon dioxide layer above the process layer and forming a patterned mask layer above the carbon-containing silicon dioxide layer. The patterned mask layer exposes portions of the carbon-containing silicon dioxide layer. A material modification process is performed on the exposed portions of the carbon-containing silicon dioxide layer to generate modified portions, and the modified portions are removed. The process layer is etched using remaining portions of the carbon-containing silicon dioxide layer as an etch mask.

Abstract: A bicycle carrier includes a main shaft having a spacer, two upper stands mounted on the main shaft and abutting the spacer, two carrying racks mounted on the main shaft and respectively abutting the upper stands, two lower stands mounted on the main shaft and respectively abutting the carrying racks, and two end caps mounted on the main shaft and respectively abutting the lower stands. The spacer has two ends each provided with a first ratchet ring. Each of the upper stands has a first mounting ring which has two ends each provided with a second ratchet ring. Each of the carrying racks has a second mounting ring which has two ends each provided with a third ratchet ring. Each of the lower stands has a third mounting ring which has two ends each provided with a fourth ratchet ring.

Abstract: Various embodiments include methods and integrated circuit structures. In some cases, a method of forming an integrated circuit structure can include: forming a mask over an oxide layer and an underlying set of fin structures, the set of fin structures including a plurality of fins each having a substrate base and a silicide layer over the substrate base; implanting the oxide layer through an opening in the mask; removing the mask; polishing the oxide layer overlying the set of fin structures after removing the mask to expose the set of fin structures; and forming a nitride layer over the set of fin structures.

Abstract: Molded rubber objects may be molded and de-molded by defining both a desired final form for the molded rubber object and a tab extending from the final form of the molded rubber object using a cavity in a mold. Rubber pellets may be dispensed in predetermined amounts at desired location(s) within the cavity to provide the rubber needed to form the molded rubber object. Heat and pressure may be applied to the mold to cause the rubber pellets to fill the cavity defining both the desired final form of the molded rubber object and the tab. After the heat and pressure has been applied, a gripping device may grasp the tab and move the tab in a direction and with sufficient force to peel the rubber object from the mold cavity. If desired, the tab may be removed from the molded rubber object.

Abstract: Methods of MOL S/D contact patterning of RMG devices without gouging of the Rx area or replacement of the dielectric are provided. Embodiments include forming a SOG layer around a RMG structure, the RMG structure having a contact etch stop layer and a gate cap layer; forming a lithography stack over the SOG and gate cap layers; patterning first and second TS openings through the lithography stack down to the SOG layer; removing a portion of the SOG layer through the first and second TS openings, the removing selective to the contact etch stop layer; converting the SOG layer to a SiO2 layer; forming a metal layer over the SiO2 layer; and planarizing the metal and SiO2 layers down to the gate cap layer.

Abstract: A hybrid method for capturing CO2 from a gas mixture is provided, comprising a step of contacting the CO2 containing gas mixture with a slurry consisting of a liquid medium, imidazole or imidazole derivative(s), and a metal-organic framework material (MOFs). For the slurry system, the mass fraction of the imidazole or imidazole derivative(s) in it ranging from 2 to 50% and the mass fraction of the metal-organic framework material in it ranging from 5 to 25%. In the technical solution provided in the present invention, through combining absorptive separation by the liquid solution in which the imidazole or imidazole derivative(s) is dissolved, adsorption separation by the MOF material suspended in the solution, and selective permeation separation by a liquid medium film forms on the outside surface of the suspended MOFs, an absorption-adsorption hybrid separation effect for CO2 gas mixtures is efficiently achieved.

Abstract: Methods for producing integrated circuits and integrated circuits produced by such methods are provided. In an exemplary embodiment, a method for producing an integrated circuit includes forming a base dielectric layer overlying a substrate. A sacrificial layer is formed overlying the base dielectric layer, and adjacent conductive components are formed in the sacrificial layer where the adjacent conductive components are physically separated by material of the sacrificial layer. The sacrificial layer is removed such that an air gap is defined between the adjacent conductive components, where the air gap overlies the base dielectric layer. A cap dielectric layer is formed overlying the base dielectric layer and the air gap to enclose the air gap within the integrated circuit.

Abstract: Methods are provided for dimension-controlled via formation over a circuit structure, including over multiple adjacent conductive structures. The method(s) includes, for instance, providing a patterned multi-layer stack structure above the circuit structure, the stack structure including at least one layer, and a pattern transfer layer above the at least one layer, the pattern transfer layer being patterned with at least one via opening; providing a sidewall spacer layer within the at least one via opening to form at least one dimension-controlled via opening; and etching through the at least one layer of the stack structure using the at least one dimension-controlled via opening to facilitate providing the via(s) over the circuit structure. In one implementation, the stack structure includes a trench-opening within a patterned hard mask layer disposed between a dielectric layer and a planarization layer, and the via(s) is partially self-aligned to the trench.

Abstract: Molded rubber objects may be molded and de-molded by defining both a desired final form for the molded rubber object and a tab extending from the final form of the molded rubber object using a cavity in a mold. Rubber pellets may be dispensed in predetermined amounts at desired location(s) within the cavity to provide the rubber needed to form the molded rubber object. Heat and pressure may be applied to the mold to cause the rubber pellets to fill the cavity defining both the desired final form of the molded rubber object and the tab. After the heat and pressure has been applied, a gripping device may grasp the tab and move the tab in a direction and with sufficient force to peel the rubber object from the mold cavity. If desired, the tab may be removed from the molded rubber object.

Abstract: A mobile communication device including a wireless transceiver and a wireless transceiver is provided. The wireless transceiver performs wireless transmission and reception to and from a first service network and a second service network. The controller uses a first subscriber identity card to establish one or more first radio bearers with the first service network via the wireless transceiver, uses a second subscriber identity card to set up an Internet Protocol Security (IPsec) tunnel with an evolved Packet Data Gateway (ePDG) of the second service network via the first radio bearers, and uses the second subscriber identity card to register an IP Multimedia Subsystem (IMS) service with the second service network via the IPsec tunnel.

Abstract: An analog-to-digital module includes a sampling unit, for generating an output voltage between a positive output end and a negative output end according to a positive input voltage of a positive input end and a negative input voltage of a negative input end; a comparing unit, for generating a digital output signal according to magnitude relationship between the output voltage and a reference voltage; a variable current source, for generating a variable current according to the digital output signal at the negative input end in a first period according to a control signal; a measured current source, for generating a measured current at the negative input end; and an adjusting unit, for adjusting the output voltage according to the digital output signal in a second period according to the control signal; wherein the first period does not overlap the second period.

Abstract: A plunger type safety valve includes a valve body, a valve rod, and a tube piece. The valve body is provided with a first water inlet port and a first water outlet port, the first water inlet port is connected to a water pipe of a local water supply plant, while the first water outlet port is connected to a water input end of a filtering device. The valve rod is disposed vertically in an inner chamber of the valve body, to switch between connection and disconnection of the first water inlet port and the first water outlet port. And the tube piece is connected fixedly with a lower end of the valve body, to form into a chamber body, and is provided with a second water inlet port and a second water outlet port.

Abstract: One illustrative method disclosed herein includes, among other things, forming a first sacrificial layer comprising amorphous silicon or polysilicon material around a fin in a lateral space between a plurality of laterally spaced apart gate structures that are positioned around the fin, performing a first selective etching process to remove a first sacrificial layer selectively relative to surrounding material so as to expose the fin in the lateral space, forming an epi material on the exposed portion of the fin, and forming a second layer of a sacrificial material above the epi material. The method also includes selectively removing the second layer of sacrificial material relative to at least the first layer of material to thereby define a source/drain contact opening that exposes the epi material and forming a self-aligned trench conductive source/drain contact structure that is conductively coupled to the epi material.

Abstract: Aspects of the disclosure provide a method for call management. The method includes receiving a signal from one of a first transceiver and a second transceiver in an electronic device. The signal indicates an incoming call managed by a first service provider that the electronic device subscribes service from. The method further includes determining whether the other of the first transceiver and the second transceiver is operative in an active call managed by a second service provider that the electronic device subscribes service from, and rejecting the incoming call when the other transceiver is operative in the active call managed by the second service provider.

Abstract: Methods of facilitating fabrication of circuit structures are provided which include, for instance: providing a structure with a film layer; modifying an etch property of the film layer by implanting at least one species of element or molecule into the upper portion of the film layer, the etch property of the film layer remaining unmodified beneath the upper portion; and subjecting the structure and film layer with the modified etch property to an etching process, the modified etch property of the film layer facilitating the etching process. Modifying the etch property of the upper portion of the film layer may include making the upper portion of the film layer preferentially susceptible or preferentially resistant to the etching process depending on the circuit fabrication approach being facilitated.

Abstract: A method for fabricating an integrated circuit includes providing an semiconductor wafer includes forming in an upper mandrel layer a first upper mandrel having a first critical dimension and a second upper mandrel having a second critical dimension; forming upper sidewall spacers along sidewalls of the first upper mandrel while leaving the second upper mandrel without sidewall spacers; removing the first upper mandrel from between the upper sidewall spacers; transferring a pattern of the upper sidewall spacers and of the second upper mandrel into a lower mandrel layer to form first lower mandrels according to the pattern of the upper sidewall spacers and a second lower mandrel according to the pattern of the second upper mandrel; and forming lower sidewall spacers along sidewalls of the first and second lower mandrels.

Abstract: Fabrication of a circuit structure is facilitated, in which a first exposure of a multi-layer structure is performed using a first mask, which defines positioning of at least one edge of an element to be formed above a substrate of the multi-layer structure. A second exposure of the multi-layer structure is performed using a second mask, which defines positioning of at least one other edge of the element. At least some material of the multi-layer structure is removed using, at least in part, the defined positioning of the at least one edge and the at least one other edges of the element, to form the element above the substrate. In some examples, multiple elements are formed, the multiple elements being hardmask elements to facilitate an etch process to etch a substrate material.

Abstract: Disclosed is a metal gradient-doped cathode material for lithium ion batteries including a hexagonal-crystalline material body and a modifying metal. The metal gradient-doped cathode material is formed by coating modifying metal hydroxide on the surface of the hexagonal-crystalline material using a chemical co-precipitation method, then sintering the modifying metal hydroxide coated hexagonal-crystalline material. The modifying metal is different from the active metals, more concentrated on the surface, and gradually decreases toward the core of particle. A gradient-doped distribution is formed without any boundary or layered structure in the particle. The surface of the powder with more the modifying metal can effectively reduce the reactivity of the cathode material with the electrolyte in the lithium battery.

Abstract: Reducing liner corrosion during metallization of semiconductor devices at BEOL includes providing a starting metallization structure, the structure including a bottom layer of dielectric material with a via therein, a liner lining the via and extending over upper edges thereof, the lined via over filled with a conductive material, recessing the conductive material down to the liner, further selectively recessing the conductive material below the upper edges of the via without damaging the liner, and forming a cap of the liner material on the conductive material.