Abstract: A light source module having a light emitting surface is provided. The light source module includes at least one substrate, at least one circuit layer, and at least one light emitting element. The at least one circuit layer is disposed on at least one surface of the at least one substrate, and the at least one circuit layer includes at least one circuit. An orthogonal projection of the at least one circuit onto the light emitting surface forms a circuit region, and a coverage rate of the circuit region on the light emitting surface is less than 50%. The at least one light emitting element is disposed on the at least one surface of the at least one substrate and is connected to the at least one circuit layer. In addition, a touch device having the light source module is also provided.

Abstract: The present disclosure is directed to a method of fabrication a semiconductor structure. The method includes providing a substrate and forming a bottom electrode over the substrate, wherein a terminal end of the bottom electrode has a tapered sidewall. The method also includes depositing an insulating layer over the bottom electrode and forming a top electrode over the insulating layer, wherein a terminal end of the top electrode has a vertical sidewall.

Abstract: A wheel and a rim with weight reduction sockets are provided. The rim is made of an aluminum alloy and includes an inner flange, a middle portion and an outer flange, the inner flange, middle portion and outer flange are all annular and are connected end to end to form a cylindrical rim, in which weight reduction sockets are provided on the outer surface of the middle portion of the rim; the weight reduction sockets are rectangular ones, and are arranged in lattices in turn; and 3-5 rows of weight reduction sockets are arranged annularly on the outer surface of the middle portion of the rim.

Abstract: A mobile device, a system and a method for task management based on voice intercom function are provided. A mobile device receives a voice message associated with at least one task. Semantic information of the voice message is analyzed to determine at least one message receiver of the voice message and generate a task message. Another mobile device corresponding to one of the at least one message receiver receives the task message. Task management information associated with the at least one task is updated according to the semantic information of the voice message.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a first semiconductor stack and a second semiconductor stack over a substrate, wherein each of the first and second semiconductor stacks includes semiconductor layers stacked up and separated from each other; a dummy spacer between the first and second semiconductor stacks, wherein the dummy spacer contacts a first sidewall of each semiconductor layer of the first and second semiconductor stacks; and a gate structure wrapping a second sidewall, a top surface, and a bottom surface of each semiconductor layer of the first and second semiconductor stacks.

Abstract: A display device is provided, including a display panel; a light-emitting element disposed under the display panel; an optical functional film disposed between the display panel and the light-emitting element. The optical functional film is capable of transmitting at least part of the light emitted from the light-emitting element. A diffuser film is disposed between the display panel and the light-emitting element. The haze of the diffuser film is greater than 85%, and the thickness of the diffuser film ranges from 0.1 mm to 0.3 mm.

Abstract: Methods for cleaning integrated circuit (IC) wafers after undergoing planarization processes (for example, chemical mechanical polishing processes) and associated cleaning units and/or planarization units are disclosed herein. An exemplary method includes configuring outlet areas of spray nozzles to deliver a cleaning solution to optimal locations of the IC wafer and delivering the cleaning solution via the spray nozzles having the configured outlet areas to the IC wafer. Each of the outlet areas is configured to achieve a particular velocity of the cleaning solution exiting the outlet area, such that the cleaning solution reaches a particular location of the IC wafer depending on the particular velocity. In some implementations, the cleaning solution enters inlet areas of the spray nozzles at the same flow rate and the cleaning solution exits the outlet areas of the spray nozzles at different velocities.

Abstract: Embodiments of the present disclosure provide a method and a system for optimizing metal stamping process parameters, thereby performing die parameters optimization and stamping forming curve optimization to achieve various design goals. Embodiments of the present disclosure automatically model the die parameters and stamping forming curves, and import them into an optimization process. Embodiments of the present disclosure use a response surface method to fit a linear polynomial function, and then perform optimization on a response surface to obtain a best die parameters values combination and a best stamping forming curve.

Abstract: A package structure and method for forming the same are provided. The package structure includes a conductive layer formed over a first substrate, and a dielectric layer formed over the conductive layer. The package structure includes a metal-insulator-metal (MIM) capacitor embedded in the dielectric layer, and a shielding layer formed over the MIM capacitor. The shielding layer is insulated from the MIM capacitor by the dielectric layer. The package structure also includes a first through via formed through the MIM capacitor, and the first through via is connected to the conductive layer, and the first through via is insulated from the shielding layer.

Abstract: A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one cationic surfactant having at least one nitrogen atom in the molecule. The slurry includes at least one liquid carrier, at least one abrasive and at least one pH adjusting agent, and has a pH of less than 7.0. The polishing method includes using the slurry composition with the cationic surfactant to polish a conductive layer. The integrated circuit comprises a block layer comprising the cationic surfactant between a sidewall of the conductive plug and an interlayer dielectric layer.

Abstract: Methods of forming a 3-dimensional metal-insulator-metal super high density (3D-MIM-SHD) capacitor and semiconductor device are disclosed herein. A method includes depositing a base layer of a first dielectric material over a semiconductor substrate and etching a series of recesses in the base layer. Once the series of recesses have been etched into the base layer, a series of conductive layers and dielectric layers may be deposited within the series of recesses to form a three dimensional corrugated stack of conductive layers separated by the dielectric layers. A first contact plug may be formed through a middle conductive layer of the corrugated stack and a second contact plug may be formed through a top conductive layer and a bottom conductive layer of the corrugated stack. The contact plugs electrically couple the conductive layers to one or more active devices of the semiconductor substrate.

Abstract: A multiple metallization scheme in conductive features of a device uses ion implantation in a first metal layer to make a portion of the first metal layer soluble to a wet cleaning agent. The soluble portion may then be removed by a wet cleaning process and a subsequent second metal layer deposited over the first metal layer. An additional layer may be formed by a second ion implantation in the second metal layer may be used to make a controllable portion of the second metal layer soluble to a wet cleaning agent. The soluble portion of the second metal layer may be removed by a wet cleaning process. The process of depositing metal layers, implanting ions, and removing soluble portions, may be repeated until a desired number of metal layers are provided.

Abstract: A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one rheology modifier. The slurry includes at least one liquid carrier, at least one abrasives and at least one oxidizer. The rheology modifier is dispensed in the slurry. The polishing method includes using the slurry composition with the rheology modifier to polish a conductive layer.

Abstract: The present disclosure provides a method that includes providing an integrated circuit (IC) substrate having various devices and an interconnection structure that couples the devices to an integrated circuit; forming a first passivation layer on the IC substrate; forming a redistribution layer on the first passivation layer, the redistribution layer being electrically connected to the interconnection structure; forming a second passivation layer on the redistribution layer and the first passivation layer; forming a polyimide layer on the second passivation layer; patterning the polyimide layer, resulting in a polyimide opening in the polyimide layer; and etching the second passivation layer through the polyimide opening using the polyimide layer as an etch mask.

Abstract: A mobile device, a system and a method for task management based on voice intercom function are provided. A mobile device receives a voice message associated with at least one task. Semantic information of the voice message is analyzed to determine at least one message receiver of the voice message and generate a task message. Another mobile device corresponding to one of the at least one message receiver receives the task message. Task management information associated with the at least one task is updated according to the semantic information of the voice message.

Abstract: A wheel and a rim with a weight reduction inner flange are provided. The rim includes an inner flange, a middle portion and an outer flange which are all annular and connected end to end to form an annular rim, in which the inner flange or the outer flange includes multiple groups of edge weight reduction sockets arranged side by side on one side of the inner cavity of a hub, and multiple groups of inner weight reduction sockets arranged side by side are provided inside the edge weight reduction sockets on the rim; a group of edge weight reduction sockets includes a first edge weight reduction socket and a second edge weight reduction socket at the edge of the inner flange or the outer flange, and the first edge weight reduction socket is in the shape of a right-angled triangle having round angles.

Abstract: Systems and methods for static and dynamic calibration may be used to provide alignment of a measurement beam from a coherence imaging (CI) measurement system relative to a processing beam from a material processing system. In these systems and methods, a calibration measurement output may be obtained from the CI measurement system and/or from an auxiliary sensor. Future measurements performed by the CI measurement system may be modified based on, at least in part, the calibration measurement output.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes a bottom electrode, a first oxide layer adjacent the bottom electrode, and a first high-k dielectric layer over the bottom electrode and the first oxide layer. A middle electrode is over the first high-k dielectric layer and a second oxide layer is adjacent the middle electrode. A second high-k dielectric layer may be over the middle electrode and the second oxide layer, a top electrode may be over the second high-k dielectric layer.

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.