Patents by Inventor Hui-Chun Yeh

Hui-Chun Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210020817
    Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.
    Type: Application
    Filed: August 5, 2020
    Publication date: January 21, 2021
    Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
  • Patent number: 10784427
    Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: September 22, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
  • Publication number: 20200243598
    Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
    Type: Application
    Filed: January 23, 2020
    Publication date: July 30, 2020
    Inventors: Po-Shun CHIU, Tsung-Hsun CHIANG, Liang-Sheng CHI, Jing JIANG, Jie CHEN, Tzung-Shiun YEH, Hsin-Ying WANG, Hui-Chun YEH, Chien-Fu SHEN
  • Patent number: 10658544
    Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: May 19, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Yu-Chen Yang, Li-Ping Jou, Hui-Chun Yeh, Yi-Wen Ku
  • Publication number: 20200020839
    Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.
    Type: Application
    Filed: September 23, 2019
    Publication date: January 16, 2020
    Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
  • Patent number: 10529895
    Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: January 7, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Tsun-Kai Ko, Schang-Jing Hon, Chien-Kai Chung, Hui-Chun Yeh, An-Ju Lin, Chien-Fu Shen, Chen Ou
  • Patent number: 10505092
    Abstract: A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: December 10, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Li-Ming Chang, Tzung-Shiun Yeh, Chien-Fu Shen, Yu-Rui Lin, Chen Ou, Hsin-Ying Wang, Hui-Chun Yeh
  • Patent number: 10497745
    Abstract: A light-emitting diode device includes a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units form a serially-connected array, and the serially-connected array includes: a plurality of adjacent light-emitting unit columns; a first light-emitting unit row; a second light-emitting unit row; and a third light-emitting unit row adjacent with the second light-emitting unit row; and a plurality of conductive connecting structures connecting the plurality of light-emitting units; wherein the light-emitting units in the first light-emitting unit rows having the same connecting direction; wherein the second and the third light-emitting unit rows include N light-emitting units with (N?1) times of sequentially connecting via (N?1) conductive connecting structures, and the (N?1) times of the sequentially connecting comprise (N/2) times of vertical connecting or (N/2) times of horizontal connections.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: December 3, 2019
    Inventor: Hui-Chun Yeh
  • Patent number: 10490598
    Abstract: A light-emitting structure, comprising: a first light-emitting structure unit and a second light-emitting structure unit, adjacent to and spaced apart from each other; and an electrical connection arranged on the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light emitting structure unit; wherein the first light-emitting structure unit comprises a first side surface and a second side surface; wherein the first side surface is between the first and the second light-emitting structure units, and the second side surface is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the first side surface is inclined and a slope of the first side surface is gentler than a slope of the second side surface.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: November 26, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Jhih-Yong Yang, Hui-chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Publication number: 20190237624
    Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
    Type: Application
    Filed: April 12, 2019
    Publication date: August 1, 2019
    Inventors: Chao-Hsing CHEN, Yu-Chen YANG, Li-Ping JOU, Hui-Chun YEH, Yi-Wen KU
  • Publication number: 20190189850
    Abstract: A light-emitting device, includes a first semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, including a second core region under the second pad electrode and a extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the extending region; wherein a contour of the second core region has a shape different from that of the second pad electrode; wherein the transparent conductive layer includes a first opening having a width wider than a width of the second pad electrode, wherein the second finger electrode includes a portion extending from th
    Type: Application
    Filed: December 14, 2018
    Publication date: June 20, 2019
    Inventors: Hsin-Ying WANG, Hui-Chun YEH, Li-Ming CHANG, Chien-Fu SHEN, Chen OU
  • Patent number: 10304999
    Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: May 28, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Yu-Chen Yang, Li-Ping Jou, Hui-Chun Yeh, Yi-Wen Ku
  • Patent number: 10043961
    Abstract: A LED device includes a substrate; a plurality of LED units on the substrate, wherein each LED unit includes: a first semiconductor layer; a second semiconductor layer; a first sidewall; a second sidewall opposite to the first sidewall; and a third sidewall connecting the first and second sidewalls; a first group of conductive connecting structure including n (n is an integer, and n>1) first conductive connecting structures formed on the first sidewall of one of the LED units and electrically connecting the LED units; and a second group of conductive connecting structure including m (m is an integer, m?1, and n?m) second conductive connecting structures formed on the second sidewall of the same one of the LED unit and electrically connecting the LED units; wherein each of the first and the second conductive connecting structures includes a middle part, a first and a second extending parts; wherein the first and the second extending parts have different length.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: August 7, 2018
    Assignee: EPISTAR CORPORATION
    Inventor: Hui-chun Yeh
  • Publication number: 20180212123
    Abstract: A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.
    Type: Application
    Filed: January 18, 2018
    Publication date: July 26, 2018
    Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
  • Publication number: 20180138381
    Abstract: A LED device includes a substrate; a plurality of LED units on the substrate, wherein each LED unit includes: a first semiconductor layer; a second semiconductor layer; a first sidewall; a second sidewall opposite to the first sidewall; and a third sidewall connecting the first and second sidewalls; a first group of conductive connecting structure including n (n is an integer, and n>1) first conductive connecting structures formed on the first sidewall of one of the LED units and electrically connecting the LED units; and a second group of conductive connecting structure including m (m is an integer, m?1, and n?m) second conductive connecting structures formed on the second sidewall of the same one of the LED unit and electrically connecting the LED units; wherein each of the first and the second conductive connecting structures includes a middle part, a first and a second extending parts; wherein the first and the second extending parts have different length.
    Type: Application
    Filed: January 11, 2018
    Publication date: May 17, 2018
    Inventor: Hui-chun YEH
  • Publication number: 20180114880
    Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.
    Type: Application
    Filed: December 12, 2017
    Publication date: April 26, 2018
    Inventors: Tsun-Kai KO, Schang-Jing HON, Chien-Kai CHUNG, Hui-Chun YEH, An-Ju LIN, Chien-Fu SHEN, Chen OU
  • Publication number: 20180108705
    Abstract: A light-emitting diode device includes a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units form a serially-connected array, and the serially-connected array includes: a plurality of adjacent light-emitting unit columns; a first light-emitting unit row; a second light-emitting unit row; and a third light-emitting unit row adjacent with the second light-emitting unit row; and a plurality of conductive connecting structures connecting the plurality of light-emitting units; wherein the light-emitting units in the first light-emitting unit rows having the same connecting direction; wherein the second and the third light-emitting unit rows include N light-emitting units with (N?1) times of sequentially connecting via (N?1) conductive connecting structures, and the (N?1) times of the sequentially connecting comprise (N/2) times of vertical connecting or (N/2) times of horizontal connections.
    Type: Application
    Filed: December 8, 2017
    Publication date: April 19, 2018
    Inventor: Hui-Chun YEH
  • Publication number: 20180108807
    Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
    Type: Application
    Filed: December 19, 2017
    Publication date: April 19, 2018
    Inventors: Chao-Hsing CHEN, Yu-Chen YANG, Li-Ping JOU, Hui-Chun YEH, Yi-Wen KU
  • Patent number: D810704
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: February 20, 2018
    Assignee: Epistar Corporation
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D844575
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: April 2, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko