Patents by Inventor Hui-Chun Yeh
Hui-Chun Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190237624Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.Type: ApplicationFiled: April 12, 2019Publication date: August 1, 2019Inventors: Chao-Hsing CHEN, Yu-Chen YANG, Li-Ping JOU, Hui-Chun YEH, Yi-Wen KU
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Publication number: 20190189850Abstract: A light-emitting device, includes a first semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, including a second core region under the second pad electrode and a extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the extending region; wherein a contour of the second core region has a shape different from that of the second pad electrode; wherein the transparent conductive layer includes a first opening having a width wider than a width of the second pad electrode, wherein the second finger electrode includes a portion extending from thType: ApplicationFiled: December 14, 2018Publication date: June 20, 2019Inventors: Hsin-Ying WANG, Hui-Chun YEH, Li-Ming CHANG, Chien-Fu SHEN, Chen OU
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Patent number: 10304999Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.Type: GrantFiled: December 19, 2017Date of Patent: May 28, 2019Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Yu-Chen Yang, Li-Ping Jou, Hui-Chun Yeh, Yi-Wen Ku
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Patent number: 10043961Abstract: A LED device includes a substrate; a plurality of LED units on the substrate, wherein each LED unit includes: a first semiconductor layer; a second semiconductor layer; a first sidewall; a second sidewall opposite to the first sidewall; and a third sidewall connecting the first and second sidewalls; a first group of conductive connecting structure including n (n is an integer, and n>1) first conductive connecting structures formed on the first sidewall of one of the LED units and electrically connecting the LED units; and a second group of conductive connecting structure including m (m is an integer, m?1, and n?m) second conductive connecting structures formed on the second sidewall of the same one of the LED unit and electrically connecting the LED units; wherein each of the first and the second conductive connecting structures includes a middle part, a first and a second extending parts; wherein the first and the second extending parts have different length.Type: GrantFiled: January 11, 2018Date of Patent: August 7, 2018Assignee: EPISTAR CORPORATIONInventor: Hui-chun Yeh
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Publication number: 20180212123Abstract: A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.Type: ApplicationFiled: January 18, 2018Publication date: July 26, 2018Inventors: Li-Ming CHANG, Tzung-Shiun YEH, Chien-Fu SHEN, Yu-Rui LIN, Chen OU, Hsin-Ying WANG, Hui-Chun YEH
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Publication number: 20180138381Abstract: A LED device includes a substrate; a plurality of LED units on the substrate, wherein each LED unit includes: a first semiconductor layer; a second semiconductor layer; a first sidewall; a second sidewall opposite to the first sidewall; and a third sidewall connecting the first and second sidewalls; a first group of conductive connecting structure including n (n is an integer, and n>1) first conductive connecting structures formed on the first sidewall of one of the LED units and electrically connecting the LED units; and a second group of conductive connecting structure including m (m is an integer, m?1, and n?m) second conductive connecting structures formed on the second sidewall of the same one of the LED unit and electrically connecting the LED units; wherein each of the first and the second conductive connecting structures includes a middle part, a first and a second extending parts; wherein the first and the second extending parts have different length.Type: ApplicationFiled: January 11, 2018Publication date: May 17, 2018Inventor: Hui-chun YEH
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Publication number: 20180114880Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.Type: ApplicationFiled: December 12, 2017Publication date: April 26, 2018Inventors: Tsun-Kai KO, Schang-Jing HON, Chien-Kai CHUNG, Hui-Chun YEH, An-Ju LIN, Chien-Fu SHEN, Chen OU
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Publication number: 20180108807Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.Type: ApplicationFiled: December 19, 2017Publication date: April 19, 2018Inventors: Chao-Hsing CHEN, Yu-Chen YANG, Li-Ping JOU, Hui-Chun YEH, Yi-Wen KU
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Publication number: 20180108705Abstract: A light-emitting diode device includes a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units form a serially-connected array, and the serially-connected array includes: a plurality of adjacent light-emitting unit columns; a first light-emitting unit row; a second light-emitting unit row; and a third light-emitting unit row adjacent with the second light-emitting unit row; and a plurality of conductive connecting structures connecting the plurality of light-emitting units; wherein the light-emitting units in the first light-emitting unit rows having the same connecting direction; wherein the second and the third light-emitting unit rows include N light-emitting units with (N?1) times of sequentially connecting via (N?1) conductive connecting structures, and the (N?1) times of the sequentially connecting comprise (N/2) times of vertical connecting or (N/2) times of horizontal connections.Type: ApplicationFiled: December 8, 2017Publication date: April 19, 2018Inventor: Hui-Chun YEH
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Patent number: 9876138Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.Type: GrantFiled: September 22, 2016Date of Patent: January 23, 2018Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Yu-Chen Yang, Li-Ping Jou, Hui-Chun Yeh, Yi-Wen Ku
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Patent number: 9876146Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in thType: GrantFiled: September 2, 2016Date of Patent: January 23, 2018Assignee: EPISTAR CORPORATIONInventors: Tsun-Kai Ko, Schang-Jing Hon, Chien-Kai Chung, Hui-Chun Yeh, An-Ju Lin, Chien-Fu Shen, Chen Ou
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Patent number: 9876052Abstract: A light-emitting diode device includes a substrate; a plurality of light-emitting units formed on the substrate, wherein the light-emitting units form a serially-connected array, including n adjacent light-emitting unit rows, wherein n?5, and the light-emitting units in the same rows connect vertically and/or the light-emitting units in the same columns connect horizontally, and a connecting direction of at least three light-emitting units in two adjacent rows are the same; a plurality of conductive connecting structures connecting the plurality of light-emitting units; a first contact light-emitting unit formed on the substrate and in the first light-emitting unit row; and a second contact light-emitting unit formed on the substrate and in the nth light-emitting unit row; at least three light-emitting units in the first light-emitting unit row have a 1st area, and at least three light-emitting units in the nth light-emitting unit row have a 2nd area, wherein the 1st area and the 2nd area are not equal.Type: GrantFiled: November 25, 2014Date of Patent: January 23, 2018Assignee: EPISTAR CORPORATIONInventor: Hui-Chun Yeh
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Patent number: 9871178Abstract: A light-emitting diode device is disclosed, which comprises a substrate including a first surface; a plurality of light-emitting diode units formed on the first surface, each of the light-emitting diode units including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of one of the plurality of conductive connecting structure is arranged on the second semiconductor layer, directly contacted with the second semiconductor layer, and electrically connected with each other through the second semiconductor layer; wherein another end of the one of the conductive connecting structures is arranged on another light-emitting diode unit, and directly contacted with one of the semiconductor layers of the another light-emitting diode unit.Type: GrantFiled: November 30, 2015Date of Patent: January 16, 2018Assignee: EPISTAR CORPORATIONInventor: Hui-chun Yeh
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Publication number: 20170263674Abstract: A light-emitting structure, comprising: a first light-emitting structure unit and a second light-emitting structure unit, adjacent to and spaced apart from each other; and an electrical connection arranged on the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light emitting structure unit; wherein the first light-emitting structure unit comprises a first side surface and a second side surface; wherein the first side surface is between the first and the second light-emitting structure units, and the second side surface is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the first side surface is inclined and a slope of the first side surface is gentler than a slope of the second side surface.Type: ApplicationFiled: May 25, 2017Publication date: September 14, 2017Inventors: Jhih-Yong YANG, Hui-chun YEH, Chien-Fu SHEN, Tsun-Kai KO
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Patent number: D797064Type: GrantFiled: September 15, 2016Date of Patent: September 12, 2017Assignee: EPISTAR CORPORATIONInventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko
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Patent number: D797065Type: GrantFiled: September 22, 2016Date of Patent: September 12, 2017Assignee: EPISTAR CORPORATIONInventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko
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Patent number: D797689Type: GrantFiled: August 24, 2016Date of Patent: September 19, 2017Assignee: EPISTAR CORPORATIONInventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko
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Patent number: D808913Type: GrantFiled: September 23, 2016Date of Patent: January 30, 2018Assignee: EPISTAR CORPORATIONInventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
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Patent number: D810704Type: GrantFiled: September 29, 2016Date of Patent: February 20, 2018Assignee: Epistar CorporationInventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
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Patent number: D844575Type: GrantFiled: August 15, 2017Date of Patent: April 2, 2019Assignee: EPISTAR CORPORATIONInventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko