Patents by Inventor Hui-Chun Yeh

Hui-Chun Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9601674
    Abstract: A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: March 21, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Publication number: 20170047494
    Abstract: A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.
    Type: Application
    Filed: August 13, 2015
    Publication date: February 16, 2017
    Applicant: EPISTAR CORPORATION
    Inventors: Hui-Chun YEH, Chien-Fu SHEN, Tsun-Kai KO
  • Publication number: 20170012167
    Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 12, 2017
    Inventors: Chao-Hsing CHEN, Yu-Chen YANG, Li-Ping JOU, Hui-Chun YEH, Yi-Wen KU
  • Publication number: 20160372635
    Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in th
    Type: Application
    Filed: September 2, 2016
    Publication date: December 22, 2016
    Inventors: Tsun-Kai KO, Schang-Jing HON, Chien-Kai CHUNG, Hui-Chun YEH, An-Ju LIN, Chien-Fu SHEN, Chen OU
  • Patent number: 9508901
    Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: November 29, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Juin-Yang Chen, De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chien-Kai Chung, Hui-Chun Yeh, Min-Yen Tsai, Tsun-Kai Ko, Chun-Teng Ko
  • Patent number: 9508902
    Abstract: An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: November 29, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Tsun-Kai Ko, Schang-Jing Hon, Chien-Kai Chung, Hui-Chun Yeh, An-Ju Lin, Chien-Fu Shen, Chen Ou
  • Patent number: 9472725
    Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protru
    Type: Grant
    Filed: May 6, 2015
    Date of Patent: October 18, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Yu-Chen Yang, Li-Ping Jou, Hui-Chun Yeh, Yi-Wen Ku
  • Publication number: 20160087181
    Abstract: A light-emitting diode device is disclosed, which comprises a substrate including a first surface; a plurality of light-emitting diode units formed on the first surface, each of the light-emitting diode units including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of one of the plurality of conductive connecting structure is arranged on the second semiconductor layer, directly contacted with the second semiconductor layer, and electrically connected with each other through the second semiconductor layer; wherein another end of the one of the conductive connecting structures is arranged on another light-emitting diode unit, and directly contacted with one of the semiconductor layers of the another light-emitting diode unit.
    Type: Application
    Filed: November 30, 2015
    Publication date: March 24, 2016
    Inventor: Hui-chun YEH
  • Patent number: 9231164
    Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: January 5, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Ting-Chia Ko, De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chien-Kai Chung, Hui-Chun Yeh, Min-Yen Tsai, Tsun-Kai Ko
  • Patent number: 9203003
    Abstract: A light-emitting diode device comprises a substrate; a plurality of LED units formed on the substrate, each LED unit including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; and a first sidewall with a length of A microns; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of the conductive connecting structure are formed on the first sidewall of one of the LED units, and a spacing between two adjacent conductive connecting structures is less than 100 microns; wherein each conductive connecting structure comprises a first extending part formed on one LED unit and a second extending part formed on the adjacent LED unit, wherein lengths of the first and the second extending parts are different; wherein a number of the conductive connecting structures is an integer larger than (A/100)?1.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: December 1, 2015
    Assignee: EPISTAR CORPORATION
    Inventor: Hui-chun Yeh
  • Patent number: D741822
    Type: Grant
    Filed: May 28, 2014
    Date of Patent: October 27, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D744966
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: December 8, 2015
    Assignee: EPISTAR CORPORATION
    Inventor: Hui Chun Yeh
  • Patent number: D748592
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: February 2, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D750580
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: March 1, 2016
    Assignee: Epistar Corporation
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D770399
    Type: Grant
    Filed: June 9, 2015
    Date of Patent: November 1, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D770400
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: November 1, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D773410
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: December 6, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D781254
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: March 14, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D782426
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: March 28, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Jhih-Yong Yang, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: D782427
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: March 28, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Chun Yeh, Chien-Fu Shen, Tsun-Kai Ko