Abstract: A light-emitting diode device comprises a substrate; a plurality of LED units formed on the substrate, each LED unit including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; and a first sidewall with a length of A microns; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of the conductive connecting structure are formed on the first sidewall of one of the LED units, and a spacing between two adjacent conductive connecting structures is less than 100 microns; wherein each conductive connecting structure comprises a first extending part formed on one LED unit and a second extending part formed on the adjacent LED unit, wherein lengths of the first and the second extending parts are different; wherein a number of the conductive connecting structures is an integer larger than (A/100)?1.

Abstract: Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protru

Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

Abstract: A light-emitting diode device, comprising a substrate having a first surface, a plurality of light-emitting units formed on the first surface wherein the plurality of the light emitting units is serially-connected array which comprises a plurality of rows and columns. The plurality of the rows and columns contain at least three light emitting units respectively. The plurality of the light-emitting units in the plurality of light emitting unit rows and light emitting unit columns is connected vertically or horizontally and a plurality of conductive connecting structures contacts the plurality of the light-emitting units wherein at least three light-emitting units in the at least two of the adjacent rows having the same connecting direction and the light-emitting units in at least two of the adjacent light emitting unit rows and the light emitting units in the adjacent row contains one vertical connection and two horizontal connection.

Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.

Abstract: A light-emitting diode device comprising: a substrate; a contact light-emitting diode unit formed on the substrate, wherein the contact light-emitting diode unit having a first area; a plurality of light-emitting diode units formed on the substrate wherein one of the plurality of the light-emitting diode units is adjacent to the contact light-emitting diode unit and has a second area and wherein the first area is larger than the second area; a plurality of conductive connecting structures connected to the plurality of the light-emitting diode units and the contact light-emitting diode unit; and a first electrode pad formed on the contact light-emitting diode unit.

Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.

Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

Abstract: A light-emitting diode device is disclosed, which comprises a substrate including a first surface; a plurality of light-emitting diode units formed on the first surface, each of the light-emitting diode units including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of one of the plurality of conductive connecting structure is arranged on the second semiconductor layer, directly contacted with the second semiconductor layer, and electrically connected with each other through the second semiconductor layer; wherein another end of the one of the conductive connecting structures is arranged on another light-emitting diode unit, and directly contacted with one of the semiconductor layers of the another light-emitting diode unit.