Abstract: In one example, an electronic device includes a substrate including a substrate upper side and a conductive structure comprising substrate upper terminals adjacent to the substrate upper side. Vertical interconnects are coupled to the substrate upper terminals. An encapsulant covers portions of the substrate and the vertical interconnects. The vertical interconnects are exposed from an upper side of the encapsulant. A redistribution structure is over the encapsulant and includes a redistribution structure upper side, a redistribution structure lower side, a redistribution dielectric structure, and a redistribution conductive structure. The redistribution structure includes redistribution upper terminals adjacent to the redistribution structure upper side and redistribution bottom terminals adjacent to the redistribution lower side. The redistribution bottom terminals are coupled to the vertical interconnects and the redistribution upper terminals.

Abstract: Provided is a work vehicle including a cabin and a loader work device. The work vehicle includes: a vehicle main body; a main body rear; front and rear wheels; a bucket; a lifting arm connected to the bucket to lift the bucket; a boom support connected to the lifting arm; a rear link having one end coupled to a first boom support hinge part of the boom support and an opposite end coupled to a rear hinge part of the main body rear; a boom cylinder having one end coupled to a second boom support hinge part of the boom support to rotate the boom support; and a rotation link having one end coupled to a third boom support hinge part of the boom support and an opposite end coupled to a front hinge part of the vehicle main body.

Abstract: Provided is a work vehicle including a cabin and a loader work device. The work vehicle includes: a vehicle main body; a main body rear; front and rear wheels; a bucket; a lifting arm connected to the bucket to lift the bucket; a boom support connected to the lifting arm; a rear link having one end coupled to a first boom support hinge part of the boom support and an opposite end coupled to a rear hinge part of the main body rear; a boom cylinder having one end coupled to a second boom support hinge part of the boom support to rotate the boom support; and a rotation link having one end coupled to a third boom support hinge part of the boom support and an opposite end coupled to a front hinge part of the vehicle main body.

Abstract: A display device includes a display panel, an actuator unit including a plurality of actuator members generating vibrations and disposed to face one side of the display panel, and a support unit contacting the actuator unit to receive a vibration generating from the actuator unit and including a plurality of support members disposed to respectively correspond to the plurality of actuator members and spaced apart from each other.

Abstract: An organic light emitting display device includes pixels at intersection regions of scan and data lines, a scan driver configured to supply a scan signal to the scan lines, a data driver configured to supply a data signal to the data lines, and a timing controller configured to receive from outside frame data including left and right image data, and to insert first blank periods into initial and latter periods of a same frame, the left and right image data being between the initial and latter periods of the same frame.

Abstract: A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm3 to have stable electrical property.

Abstract: A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.

Abstract: A display device includes a display panel, an actuator unit including a plurality of actuator members generating vibrations and disposed to face one side of the display panel, and a support unit contacting the actuator unit to receive a vibration generating from the actuator unit and including a plurality of support members disposed to respectively correspond to the plurality of actuator members and spaced apart from each other.

Abstract: A flat panel display device includes a transparent display panel including a transparent area transmitting light incident on one surface of the transparent display panel to the other surface opposite to the one surface; a first anti-reflective film which is formed over the one surface of the transparent display panel and has a moth eye structure; and a second anti-reflective film which is formed over the other surface of the transparent display panel and has a moth eye structure.

Abstract: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.

Abstract: An organic light emitting display device includes pixels at intersection regions of scan and data lines, a scan driver configured to supply a scan signal to the scan lines, a data driver configured to supply a data signal to the data lines, and a timing controller configured to receive from outside frame data including left and right image data, and to insert first blank periods into initial and latter periods of a same frame, the left and right image data being between the initial and latter periods of the same frame.

Abstract: An Organic Light Emitting Display (OLED) and a method of fabricating the OLED includes: a substrate including a pixel region and a non-pixel region; a gate electrode arranged in the non-pixel region of the substrate; a first insulating layer arranged on the substrate having the gate electrode formed thereon, and having an open groove on an upper surface of a region opposite to the gate electrode; a semiconductor layer buried in the groove and including a source region, a channel region and a drain region; and an organic thin film layer arranged in the pixel region of the substrate. A common electrode is arranged between the drain region of the semiconductor layer and the organic thin film layer to electrically couple the drain region to the organic thin film layer.

Abstract: A flat panel display device includes a transparent display panel including a transparent area transmitting light incident on one surface of the transparent display panel to the other surface opposite to the one surface; a first anti-reflective film which is formed over the one surface of the transparent display panel and has a moth eye structure; and a second anti-reflective film which is formed over the other surface of the transparent display panel and has a moth eye structure.

Abstract: Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.

Abstract: An organic light emitting display device capable of driving transistor threshold voltage compensation, including: pixels positioned in the intersections of scan lines and data lines, wherein each pixel comprises: a first transistor and a fourth transistor, connected at a common node, disposed between an anode of an OLED and a first power supply; a cathode of the OLED connected to a second power supply; a second transistor connected between a gate of the first transistor and a data line, and turned on when a scan signal is supplied to a scan line; a third transistor connected between the common node and the data line, and turned on when a scan signal is supplied to the scan line; a first capacitor connected between the gate of the first transistor and the anode of the OLED; and a second capacitor connected between the anode of the OLED and a predetermined voltage source.

Abstract: A thin film transistor (TFT), a method of fabricating the TFT, and a flat panel display having the TFT, wherein the TFT includes a substrate; a gate electrode provided on the substrate; a gate insulating layer provided on the gate electrode; a source electrode and a drain electrode provided on the gate insulating layer and insulated from the gate electrode; and an organic semiconductor layer contacting the source and drain electrodes and insulated from the gate electrode.

Abstract: An organic thin film transistor in which source and drain electrodes have a double layer structure to aid patterning of an organic semiconductor layer using a laser beam, and a flat display device having the organic thin film transistor. The organic thin film transistor includes: a gate electrode; a source electrode and a drain electrode insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and having a portion patterned to electrically connect to the source and drain electrodes; and a protection layer formed on the source and drain electrodes.

Abstract: An organic light emitting display device having a pixel unit including a plurality of scan lines, data lines and pixel power lines arranged in a matrix type and forming respective sub pixels in an intersection region of the plurality of scan lines, data lines and pixel power lines; a thin film transistor including a pad unit receiving signals to drive driving the respective sub pixels, a scan driver and a data driver supplying the signals to the plurality of scan lines and data lines through the pad unit, and non-pixel unit formed with a power supply line supplying power to the pixel powers line, the sub-pixel including an oxide semiconductor layer; a capacitor having a lower electrode and an upper electrode formed of a transparent conductive material; and an organic light emitting element electrically coupled to the thin transistor and disposed on the capacitor.

Abstract: The present invention relates to an organic electroluminescent display device for preventing a voltage drop and a short between power supply elements by simultaneously forming a reflective film and a power supply element using a low resistance metal. The invention provides an organic electroluminescent display device comprising gate lines, data lines and a power supply element formed on an insulating substrate, a pixel region limited by the gate lines, the data lines and the power supply element, and pixels arranged on the pixel region and comprising of a reflective film and a pixel electrode, wherein the reflective film is formed on the same layer as the power supply element.

Abstract: A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.