Abstract: A thin film transistor (TFT) includes an N-type oxide semiconductor layer on a substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer. The first and second portions each have a doped region containing ions of at least one Group 1 element, and the ions of the at least one Group 1 element in the doped region may have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.

Abstract: An organic electroluminescence display device can have uniformity of color coordinates by controlling the thickness of SiNx layer under an organic light-emitting element. Such an organic electroluminescence display device can include a TFT, a passivation layer formed on the TFT, and an organic light-emitting element on the passivation layer. The passivation layer can have a thickness deviation range of about 200 ? or less.

Abstract: An organic light emitting display device having a pixel unit including a plurality of scan lines, data lines and pixel power lines arranged in a matrix type and forming respective sub pixels in an intersection region of the plurality of scan lines, data lines and pixel power lines; a thin film transistor including a pad unit receiving signals to drive driving the respective sub pixels, a scan driver and a data driver supplying the signals to the plurality of scan lines and data lines through the pad unit, and non-pixel unit formed with a power supply line supplying power to the pixel powers line, the sub-pixel including an oxide semiconductor layer; a capacitor having a lower electrode and an upper electrode formed of a transparent conductive material; and an organic light emitting element electrically coupled to the thin transistor and disposed on the capacitor.

Abstract: An Organic Light Emitting Display (OLED) and a method of fabricating the OLED includes: a substrate including a pixel region and a non-pixel region; a gate electrode arranged in the non-pixel region of the substrate; a first insulating layer arranged on the substrate having the gate electrode formed thereon, and having an open groove on an upper surface of a region opposite to the gate electrode; a semiconductor layer buried in the groove and including a source region, a channel region and a drain region; and an organic thin film layer arranged in the pixel region of the substrate. A common electrode is arranged between the drain region of the semiconductor layer and the organic thin film layer to electrically couple the drain region to the organic thin film layer.

Abstract: An organic light emitting display including: a driving thin film transistor (TFT) including a semiconductor layer on a substrate including a source electrode, a drain electrode, and an N-type oxide semiconductor; at least one insulating layer formed on the driving TFT; a pixel defining layer for defining a pixel region on the insulating layer; a cathode electrode coupled to a drain electrode of the driving TFT and patterned to correspond to the pixel region; an electron injection layer arranged over the entire surfaces of the pixel defining layer and the cathode electrode and formed of a material whose band gaps are 3.0 eV to 5.0 eV selected from the group consisting of an oxide, a nitride, a fluoride, and diamond on; an organic light emitting layer formed on the electron injection layer to correspond to the cathode region; and an anode electrode formed on the organic light emitting layer.

Abstract: An organic light emitting display device including a flexible substrate and a plurality of thin film transistors (TFTs) formed on the substrate. The plurality of TFTs formed on the substrate include a pixel transistor for driving a pixel and a driver circuit transistor for driving a driver circuit, and a longitudinal direction of a channel region of the pixel transistor makes a first predetermined angle with a direction in which the substrate is bent. As such, it is possible to minimize a change in the electrical property of the TFTs formed on the flexible substrate and to thus reduce a change in the amount of current that flows in the channels of the TFTs.

Abstract: A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm3 to have stable electrical property.

Abstract: An OLED includes a substrate having a circuit region and a pixel region. At least one circuit Thin Film Transistor (TFT) and at least one pixel TFT are respectively arranged on the circuit region and the pixel region. Each TFT has a semiconductor layer, a gate electrode, a source electrode and a drain electrode. A pixel electrode is electrically connected to one of the source and drain electrodes of the pixel TFT. At least one silicon nitride layer is arranged between the source and drain electrodes and the substrate and is opened in the entire pixel region.

Abstract: A thin film transistor (TFT) includes an N-type oxide semiconductor layer on a substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer. The first and second portions each have a doped region containing ions of at least one Group 1 element, and the ions of the at least one Group 1 element in the doped region may have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.

Abstract: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.

Abstract: A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.

Abstract: An organic light-emitting display device. The organic light-emitting display device according to an embodiment of the present invention utilizes an N-type driving transistor, and therefore it has a drain electrode of a driving transistor electrically connected to a cathode electrode of an organic light-emitting diode, wherein the organic light-emitting display device includes a thin metal film between the cathode electrode and the organic light-emitting layer.

Abstract: A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.

Abstract: Thin film transistors and organic light emitting displays using the same are provided. The thin film transistor may include a substrate, a semiconductor layer, a gate electrode, and source/drain electrodes on the substrate. The semiconductor layer is composed of a P-type semiconductor layer obtained by diffusing phosphorus into a zinc oxide semiconductor. The phosphorus is doped in the semiconductor layer to a concentration ranging from about 1×1014 to about 1×1018 cm?3.

Abstract: An organic electroluminescent display has: anode electrodes of R, G and B unit pixels formed separate from each other on a substrate; organic thin-film layers of the R, G and B unit pixels formed on the anode electrodes; and a cathode electrode formed over an entire surface of the substrate. The anode electrode of at least one unit pixel, among the R, G and B unit pixels, has a thickness different from anode electrodes of the other unit pixels. The anode electrode of each of the unit pixels comprises a first film having a high reflectivity and a second film for adjusting a work function. The second film of at least one unit pixel, among the unit pixels, has a thickness different from the second films of the other unit pixels. The second film of the R unit pixel is thicker than the second films of the other unit pixels.

Abstract: Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.

Abstract: An organic electroluminescent display comprises: anode electrodes of R, G and B unit pixels formed separate from each other on a substrate; organic thin-film layers of the R, G and B unit pixels formed on the anode electrodes; and a cathode electrode formed over an entire surface of the substrate. The anode electrode of at least one unit pixel, among the R, G and B unit pixels, has a thickness different from anode electrodes of the other unit pixels. The anode electrode of each of the unit pixels comprises a first film having a high reflectivity and a second film for adjusting a work function. The second film of at least one unit pixel, among the unit pixels, has a thickness different from the second films of the other unit pixels. The second film of the R unit pixel is thicker than the second films of the other unit pixels.

Abstract: A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.

Abstract: There is provided an organic electroluminescence device employing a multi-layered pixel electrode and a method of fabricating the same. The organic electroluminescence device comprises a substrate, a first pixel electrode located in a predetermined area on the substrate, and a second pixel electrode located on the first pixel electrode and entirely covering the first pixel electrode. Thus, the film breakdown due to the galvanic phenomenon is precluded.

Abstract: Provided are an organic thin film transistor, a flat panel display device and methods of manufacturing these. The organic thin film transistor includes: source and drain electrodes and an organic semiconductor layer formed on a surface of a substrate; a gate electrode insulated from the source and drain electrodes and the organic semiconductor layer; wherein a thickness of at least a portion of the gate insulator above both the source and drain electrodes is larger than a thickness of at least a portion of the gate insulator above the channel region of the organic semiconductor layer.