Abstract: A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.

Abstract: An organic thin film transistor in which source and drain electrodes have a double layer structure to aid patterning of an organic semiconductor layer using a laser beam, and a flat display device having the organic thin film transistor. The organic thin film transistor includes: a gate electrode; a source electrode and a drain electrode insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and having a portion patterned to electrically connect to the source and drain electrodes; and a protection layer formed on the source and drain electrodes.

Abstract: Provided are an organic TFT that reduces contact resistance between a source and drain electrode and an organic semiconductor layer and that can be easily manufactured, a flat panel display device having the organic TFT, and methods of manufacturing the organic TFT and the flat panel display device having the same. The organic TFT includes; a substrate; a gate electrode and a blocking layer formed on the substrate; a gate insulating film covering the gate electrode and the blocking layer; a source electrode and a drain electrode located on the gate insulating film; an auxiliary source electrode and an auxiliary drain electrode respectively located on the source electrode and the drain electrode; and an organic semiconductor layer contacting the auxiliary source electrode and the auxiliary drain electrode.

Abstract: An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.

Abstract: An organic electroluminescent display comprises: anode electrodes of R, G and B unit pixels formed separate from each other on a substrate; organic thin-film layers of the R, G and B unit pixels formed on the anode electrodes; and a cathode electrode formed over an entire surface of the substrate. The anode electrode of at least one unit pixel, among the R, G and B unit pixels, has a thickness different from anode electrodes of the other unit pixels. The anode electrode of each of the unit pixels comprises a first film having a high reflectivity and a second film for adjusting a work function. The second film of at least one unit pixel, among the unit pixels, has a thickness different from the second films of the other unit pixels. The second film of the R unit pixel is thicker than the second films of the other unit pixels.

Abstract: A flat panel display capable of preventing a pixel circuit from electrically short-circuiting, and a method of manufacturing the flat panel display are disclosed. In one embodiment, the flat panel display includes an insulating film having an aperture, a pixel electrode having a portion exposed by the aperture of the insulating film, a conductor formed on the insulating film, and a capping layer covering the conductor. According to embodiments of the present invention, the conductor is formed from a conductive paste and the rough surface of the conductive paste is passivated by a capping layer formed on the conductor, and thus, a short circuit between the conductor and an opposing pixel electrode can be prevented.

Abstract: A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.

Abstract: An organic thin film transistor (OTFT) and an organic electroluminescent display (OLED) device are disclosed. The OTFT includes a drain electrode functioning as a pixel electrode (anode electrode) of an organic emission element, such that the manufacturing process of an OLED device is simplified. In one embodiment, the OLED device includes: i) a substrate comprising an emission region and a non-emission region, ii) an organic thin film transistor, which comprises, a gate electrode, source and drain electrodes respectively overlapping both side portions of the gate electrode, and a semiconductor layer, and is disposed in the non-emission region, and iii) an organic light emitting element comprising a lower electrode, an organic layer, and an upper electrode.

Abstract: An organic electroluminescent display device having an organic thin film transistor (OTFT) and a method of fabricating the same is disclosed. The display device can maintain an insulation property of a TFT and concurrently, ensure a sufficient capacitance by using an organic insulating layer for a gate insulating layer and using an inorganic insulating layer for a capacitor dielectric. In one embodiment, the organic electroluminescent display device includes a substrate having a capacitor region and a transistor region, a TFT formed in the transistor region of the substrate, and having a gate electrode, an organic semiconductor layer, a source electrode, and a drain electrode, a capacitor formed in the capacitor region of the substrate, and having a lower electrode and an upper electrode, and a display element connected to one of source/drain electrodes of the TFT.

Abstract: Provided are an organic thin film transistor, a flat panel display device and methods of manufacturing these. The organic thin film transistor includes: source and drain electrodes and an organic semiconductor layer formed on a surface of a substrate; a gate electrode insulated from the source and drain electrodes and the organic semiconductor layer; wherein a thickness of at least a portion of the gate insulator above both the source and drain electrodes is larger than a thickness of at least a portion of the gate insulator above the channel region of the organic semiconductor layer.

Abstract: A thin film transistor (TFT), a method of fabricating the TFT, and a flat panel display having the TFT, wherein the TFT includes a substrate; a gate electrode provided on the substrate; a gate insulating layer provided on the gate electrode; a source electrode and a drain electrode provided on the gate insulating layer and insulated from the gate electrode; and an organic semiconductor layer contacting the source and drain electrodes and insulated from the gate electrode.

Abstract: An organic electroluminescence display device can have uniformity of color coordinates by controlling the thickness of SiNx layer under an organic light-emitting element. Such an organic electroluminescence display device can include a TFT, a passivation layer formed on the TFT, and an organic light-emitting element on the passivation layer. The passivation layer can have a thickness deviation range of about 200 ? or less.

Abstract: An OLED includes a substrate having a circuit region and a pixel region. At least one circuit Thin Film Transistor (TFT) and at least one pixel TFT are respectively arranged on the circuit region and the pixel region. Each TFT has a semiconductor layer, a gate electrode, a source electrode and a drain electrode. A pixel electrode is electrically connected to one of the source and drain electrodes of the pixel TFT. At least one silicon nitride layer is arranged between the source and drain electrodes and the substrate and is opened in the entire pixel region.

Abstract: An organic electro luminescence (EL) display with low light transmittance material removed from an emission region. The organic EL display comprises a substrate having the emission region and a TFT region. A TFT is formed on the substrate in the TFT region and includes an active layer having source/drain regions, a gate electrode formed on a gate insulating layer, and source/drain electrodes electrically coupled to the source/drain regions. A passivation layer is formed in the TFT region only and it includes a via hole exposing one of the source/drain electrodes. An organic EL element is formed in the emission region and is electrically coupled to one of the source/drain electrodes exposed through the via hole.

Abstract: The present invention relates to an organic electroluminescent display device for preventing a voltage drop and a short between power supply elements by simultaneously forming a reflective film and a power supply element using a low resistance metal. The invention provides an organic electroluminescent display device comprising gate lines, data lines and a power supply element formed on an insulating substrate, a pixel region limited by the gate lines, the data lines and the power supply element, and pixels arranged on the pixel region and comprising of a reflective film and a pixel electrode, wherein the reflective film is formed on the same layer as the power supply element.

Abstract: A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.

Abstract: There is provided an organic electroluminescence device employing a multi-layered pixel electrode and a method of fabricating the same. The organic electroluminescence device comprises a substrate, a first pixel electrode located in a predetermined area on the substrate, and a second pixel electrode located on the first pixel electrode and entirely covering the first pixel electrode. Thus, the film breakdown due to the galvanic phenomenon is precluded.

Abstract: An organic electroluminescent display comprises: anode electrodes of R, G and B unit pixels formed separate from each other on a substrate; organic thin-film layers of the R, G and B unit pixels formed on the anode electrodes; and a cathode electrode formed over an entire surface of the substrate. The anode electrode of at least one unit pixel, among the R, G and B unit pixels, has a thickness different from anode electrodes of the other unit pixels. The anode electrode of each of the unit pixels comprises a first film having a high reflectivity and a second film for adjusting a work function. The second film of at least one unit pixel, among the unit pixels, has a thickness different from the second films of the other unit pixels. The second film of the R unit pixel is thicker than the second films of the other unit pixels.