Patents by Inventor Hun-Jung Lee
Hun-Jung Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120052636Abstract: A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.Type: ApplicationFiled: November 4, 2011Publication date: March 1, 2012Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Hyun-soo SHIN, Yeon-gon Mo, Jae-kyeong Jeong, Jin-seong Park, Hun-jung Lee, Jong-han Jeong
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Publication number: 20110315983Abstract: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.Type: ApplicationFiled: September 12, 2011Publication date: December 29, 2011Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Jong-han JEONG, Jae-kyeong JEONG, Jin-seong PARK, Yeon-gon MO, Hui-won YANG, Min-kyu KIM, Tae-kyung AHN, Hyun-soo SHIN, Hun jung LEE
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Patent number: 8076733Abstract: Provided are an organic TFT that reduces contact resistance between a source and drain electrode and an organic semiconductor layer and that can be easily manufactured, a flat panel display device having the organic TFT, and methods of manufacturing the organic TFT and the flat panel display device having the same. The organic TFT includes; a substrate; a gate electrode and a blocking layer formed on the substrate; a gate insulating film covering the gate electrode and the blocking layer; a source electrode and a drain electrode located on the gate insulating film; an auxiliary source electrode and an auxiliary drain electrode respectively located on the source electrode and the drain electrode; and an organic semiconductor layer contacting the auxiliary source electrode and the auxiliary drain electrode.Type: GrantFiled: September 25, 2006Date of Patent: December 13, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun-Jung Lee, Sung-Jin Kim, Jong-Han Jeong
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Patent number: 8053773Abstract: A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.Type: GrantFiled: May 29, 2008Date of Patent: November 8, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hyun-soo Shin, Yeon-gon Mo, Jae-kyeong Jeong, Jin-seong Park, Hun-jung Lee, Jong-han Jeong
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Patent number: 8043887Abstract: A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.Type: GrantFiled: December 17, 2009Date of Patent: October 25, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Nam-Choul Yang, Hye-Dong Kim, Min-Chul Suh, Jae-Bon Koo, Sang-Min Lee, Hun-Jung Lee
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Patent number: 8017513Abstract: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.Type: GrantFiled: July 15, 2008Date of Patent: September 13, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Jong-han Jeong, Jae-kyeong Jeong, Jin-seong Park, Yeon-gon Mo, Hui-won Yang, Min-kyu Kim, Tae-kyung Ahn, Hyun-soo Shin, Hun Jung Lee
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Patent number: 7928429Abstract: An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.Type: GrantFiled: May 18, 2006Date of Patent: April 19, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun-Jung Lee, Min-Chul Suh, Jae-Bon Koo
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Patent number: 7915101Abstract: Thin film transistors and organic light emitting displays using the same are provided. The thin film transistor may include a substrate, a semiconductor layer, a gate electrode, and source/drain electrodes on the substrate. The semiconductor layer is composed of a P-type semiconductor layer obtained by diffusing phosphorus into a zinc oxide semiconductor. The phosphorus is doped in the semiconductor layer to a concentration ranging from about 1×1014 to about 1×1018 cm?3.Type: GrantFiled: May 9, 2008Date of Patent: March 29, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Jae-kyeong Jeong, Yeon-gon Mo, Jin-seong Park, Hyun-soo Shin, Hun-jung Lee, Jong-han Jeong
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Patent number: 7876038Abstract: An organic light emitting display including: a driving thin film transistor (TFT) including a semiconductor layer on a substrate including a source electrode, a drain electrode, and an N-type oxide semiconductor; at least one insulating layer formed on the driving TFT; a pixel defining layer for defining a pixel region on the insulating layer; a cathode electrode coupled to a drain electrode of the driving TFT and patterned to correspond to the pixel region; an electron injection layer arranged over the entire surfaces of the pixel defining layer and the cathode electrode and formed of a material whose band gaps are 3.0 eV to 5.0 eV selected from the group consisting of an oxide, a nitride, a fluoride, and diamond on; an organic light emitting layer formed on the electron injection layer to correspond to the cathode region; and an anode electrode formed on the organic light emitting layer.Type: GrantFiled: November 19, 2008Date of Patent: January 25, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun-Jung Lee, Dong-Won Han, Steve Y. G. Mo
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Patent number: 7855503Abstract: A flat panel display capable of preventing a pixel circuit from electrically short-circuiting, and a method of manufacturing the flat panel display are disclosed. In one embodiment, the flat panel display includes an insulating film having an aperture, a pixel electrode having a portion exposed by the aperture of the insulating film, a conductor formed on the insulating film, and a capping layer covering the conductor. According to embodiments of the present invention, the conductor is formed from a conductive paste and the rough surface of the conductive paste is passivated by a capping layer formed on the conductor, and thus, a short circuit between the conductor and an opposing pixel electrode can be prevented.Type: GrantFiled: March 10, 2006Date of Patent: December 21, 2010Assignee: Samsung Mobile Display Co., Ltd.Inventors: Min-Chul Suh, Hun-Jung Lee, Yeon-Gon Mo, Jae-Bon Koo
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Patent number: 7842943Abstract: An organic thin film transistor and a flat panel display device using the same are disclosed. The organic thin film transistor includes an inorganic layer doped with an impurity in a region of the outer surfaces of source and drain electrodes, or the source and drain electrodes is formed by an inorganic material doped with an impurity. According to the organic thin film transistor, an energy barrier is generated when contact between the organic semiconductor and the source and drain electrodes is removed to form an ohmic contact.Type: GrantFiled: August 9, 2006Date of Patent: November 30, 2010Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun Jung Lee, Sang Il Park, Min Chul Suh
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Patent number: 7786494Abstract: A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.Type: GrantFiled: May 9, 2008Date of Patent: August 31, 2010Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun-Jung Lee, Jae-Kyeong Jeong, Yeon-Gon Mo
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Patent number: 7777225Abstract: An organic light-emitting display device. The organic light-emitting display device according to an embodiment of the present invention utilizes an N-type driving transistor, and therefore it has a drain electrode of a driving transistor electrically connected to a cathode electrode of an organic light-emitting diode, wherein the organic light-emitting display device includes a thin metal film between the cathode electrode and the organic light-emitting layer.Type: GrantFiled: May 15, 2008Date of Patent: August 17, 2010Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun-jung Lee, Nam-choul Yang, Jae-kyeong Jeong, Hyun-soo Shin, Jin-seong Park, Jong-han Jeong, Yeon-gon Mo
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Patent number: 7740515Abstract: A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.Type: GrantFiled: September 6, 2007Date of Patent: June 22, 2010Assignee: Samsung Mobile Display Co., Ltd.Inventors: Sang-Il Park, Jae-Bon Koo, Hun-Jung Lee
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Publication number: 20100141645Abstract: An organic light emitting display device capable of driving transistor threshold voltage compensation, including: pixels positioned in the intersections of scan lines and data lines, wherein each pixel comprises: a first transistor and a fourth transistor, connected at a common node, disposed between an anode of an OLED and a first power supply; a cathode of the OLED connected to a second power supply; a second transistor connected between a gate of the first transistor and a data line, and turned on when a scan signal is supplied to a scan line; a third transistor connected between the common node and the data line, and turned on when a scan signal is supplied to the scan line; a first capacitor connected between the gate of the first transistor and the anode of the OLED; and a second capacitor connected between the anode of the OLED and a predetermined voltage source.Type: ApplicationFiled: September 29, 2009Publication date: June 10, 2010Applicant: Samsung Mobile Display Co., Ltd.Inventors: Sang-Moo Choi, Hun-Jung Lee, Su-Young Kim, Dong-Wook Choi
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Publication number: 20100099215Abstract: A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.Type: ApplicationFiled: December 17, 2009Publication date: April 22, 2010Applicant: Samsung Mobile Display Co., Ltd.Inventors: Nam-Choul Yang, Hye-Dong Kim, Min-Chul Suh, Jae-Bon Koo, Sang-Min Lee, Hun-Jung Lee
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Patent number: 7667385Abstract: An organic thin film transistor (OTFT) and an organic electroluminescent display (OLED) device are disclosed. The OTFT includes a drain electrode, functioning as a pixel electrode (anode electrode) of an organic emission element, such that the manufacturing process of an OLED device is simplified. In one embodiment, the OLED device includes: i) a substrate comprising an emission region and a non-emission region, ii) an organic thin film transistor, which comprises, a gate electrode, source and drain electrodes respectively overlapping both side portions of the gate electrode, and a semiconductor layer, and is disposed in the non-emission region, and iii) an organic light emitting element comprising a lower electrode, an organic layer, and an upper electrode.Type: GrantFiled: October 13, 2005Date of Patent: February 23, 2010Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun-Jung Lee, Jae-Bon Koo
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Patent number: 7663310Abstract: An organic electro luminescence (EL) display with low light transmittance material removed from an emission region. The organic EL display comprises a substrate having the emission region and a TFT region. A TFT is formed on the substrate in the TFT region and includes an active layer having source/drain regions, a gate electrode formed on a gate insulating layer, and source/drain electrodes electrically coupled to the source/drain regions. A passivation layer is formed in the TFT region only and it includes a via hole exposing one of the source/drain electrodes. An organic EL element is formed in the emission region and is electrically coupled to one of the source/drain electrodes exposed through the via hole.Type: GrantFiled: November 22, 2004Date of Patent: February 16, 2010Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun-Jung Lee, Jae-Bon Koo, Sang-Il Park
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Thin film transistor, method of manufacturing the same and flat panel display device having the same
Publication number: 20100026169Abstract: Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.Type: ApplicationFiled: March 23, 2009Publication date: February 4, 2010Inventors: Jong-Han Jeong, Tae-Kyung Ahn, Jae-Kyeong Jeong, Jin-Sung Park, Hun-Jung Lee, Hyun-Soo Shin, Yeon-Gon Mo -
Patent number: 7655943Abstract: An organic electroluminescent display device having an organic thin film transistor (OTFT) and a method of fabricating the same is disclosed. The display device can maintain an insulation property of a TFT and concurrently, ensure a sufficient capacitance by using an organic insulating layer for a gate insulating layer and using an inorganic insulating layer for a capacitor dielectric. In one embodiment, the organic electroluminescent display device includes a substrate having a capacitor region and a transistor region, a TFT formed in the transistor region of the substrate, and having a gate electrode, an organic semiconductor layer, a source electrode, and a drain electrode, a capacitor formed in the capacitor region of the substrate, and having a lower electrode and an upper electrode, and a display element connected to one of source/drain electrodes of the TFT.Type: GrantFiled: October 18, 2005Date of Patent: February 2, 2010Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun-Jung Lee, Min-Chul Suh, Jae-Bon Koo