Abstract: The present invention discloses a gain amplifier, capable of concurrently operating at three different frequency bands. The gain amplifier comprises an amplification stage for amplifying a signal applied to an input of the amplifier and a triple-band resonance load connected between a DC bias voltage and a DC bias input of the amplification stage. The triple-band resonance load uses a set of reactive elements to provide match in a first frequency band, a second frequency band and in a third frequency band, such as at 2.4 GHz, 5.8 GHz and 9.0 GHz. According to the gain amplifier of the present invention, it can effectively provide triple-band signal amplification and in-band interference suppression for various multi-standard coexist communication systems.

Abstract: A dual-band bandpass filter with stepped-impedance resonators uses only one circuit to generate dual-band effect. It adopts the principle of stepped-impedance resonator, which contains a connecting section and two coupling sections. The impedance and electrical length of the connecting section and coupling sections conforms to a selected condition to generate two passbands at desired frequencies. A multi-layer broadside-coupled parallel lines structure may be applied to increase coupling-amount between the parallel lines so that the dual-band bandpass filters have broader bandwidth and less loss.

Abstract: A dual-band bandpass filter with stepped-impedance resonators uses only one circuit to generate dual-band effect. It adopts the principle of stepped-impedance resonator, which contains a connecting section and two coupling sections. The impedance and electrical length of the connecting section and coupling sections conforms to a selected condition to generate two passbands at desired frequencies. A multi-layer broadside-coupled parallel lines structure may be applied to increase coupling-amount between the parallel lines so that the dual-band bandpass filters have broader bandwidth and less loss.

Abstract: A spurline directional coupler includes a first coupling section and a second coupling section that are in parallel with each other for coupling, and a first sub-coupling section and a second sub-coupling section coupled with the first coupling section, and a third sub-coupling section and a fourth sub-coupling section coupled with the second coupling section. The parallel coupling relationship between the coupling section and the sub-coupling sections generates a capacitive effect thereby may improve isolation and directivity of the spurline directional coupler.

Abstract: A process of forming silicon-based nanowires heats high-surface-oxygen-content silicon powders to initiate vapor-solid reaction to form nanowires. The reaction gas is charged to react with the Si powders to form the silicon-based nanowires such as silicon nanowires or SiC nanowires. With control of the reaction gas, the components of the nanowires can be exactly controlled without the addition of metallic catalysts. Thereby, the nanowires can be made with reduced cost.

Abstract: A chemical vapor deposition apparatus for titanium-nitride application that is useful for preventing contaminants caused by arching between a substantially planar substrate and a substrate supporting apparatus during the deposition cycle. The apparatus includes a chemical vapor deposition chamber having a substrate-supporting heater. An annular housing supported by the heater, and a conductive strap that connectively secures the substrate-supporting heater to the annular housing by using holes instead of conventional slots. The conductive strap is designed as a flexure to flex with process temperature changes to improve electrical connectivity at its terminal connection and to prevent degradation. The annular housing has a top and a bottom surface and a cylindrical wall extending peripherally below the surfaces. The cylindrical wall encircles an isolator ring.