Patents by Inventor Hung Chou

Hung Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240118514
    Abstract: A camera driving module includes: a base including a central opening; a casing disposed on the base and including an opening hole corresponding to the central opening; a lens unit movably disposed on the casing; and a focus driving part. The focus driving part includes a carrier, an AF coil element, at least two permanent magnets and a Hall element. The carrier is disposed on the lens unit and movable in a direction parallel to an optical axis. The AF coil element is fixed to the base and faces toward the carrier. The permanent magnets are fixed on one side of the carrier facing toward the base and disposed opposite to each other about the optical axis. The Hall element faces toward a corresponding surface of one of the permanent magnets. The AF coil element and the corresponding surfaces are arranged in the direction parallel to the optical axis.
    Type: Application
    Filed: December 13, 2023
    Publication date: April 11, 2024
    Applicant: LARGAN DIGITAL CO.,LTD.
    Inventors: Te-Sheng TSENG, Ming-Ta CHOU, Wen-Hung HSU
  • Publication number: 20240120419
    Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.
    Type: Application
    Filed: December 5, 2023
    Publication date: April 11, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ling-Chun Chou, Yu-Hung Chang, Kun-Hsien Lee
  • Publication number: 20240118589
    Abstract: A camera module includes a plastic carrier, an imaging lens assembly, a reflective element and a plurality of auto-focusing elements. The plastic carrier includes an inner portion and an outer portion, wherein an inner space is defined by the inner portion, and the outer portion includes at least one mounting structure. The imaging lens assembly is disposed in the inner space of the plastic carrier. The reflective element is for folding an image light by a reflective surface of the reflective element into the imaging lens assembly. The auto-focusing elements include at least two magnets and at least one wiring element, wherein the auto-focusing elements are for moving the plastic carrier along a second optical axis of the imaging lens assembly, and the magnets or the wiring element can be disposed on the mounting structure of the outer portion.
    Type: Application
    Filed: December 18, 2023
    Publication date: April 11, 2024
    Inventors: Te-Sheng TSENG, Ming-Ta CHOU, Wen-Hung HSU
  • Publication number: 20240112848
    Abstract: A package structure is provided. The package structure includes an electronic component and a connection element. The electronic component includes a conductive wire and a magnetic layer encapsulating the conductive wire. The connection element penetrates and contacts the magnetic layer and the conductive wire.
    Type: Application
    Filed: September 29, 2022
    Publication date: April 4, 2024
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Wu Chou HSU, Hung Yi CHUANG
  • Publication number: 20240114688
    Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.
    Type: Application
    Filed: November 21, 2022
    Publication date: April 4, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Chia-Wen Wang, Chien-Hung Chen, Chia-Hui Huang, Ling Hsiu Chou, Jen Yang Hsueh, Chih-Yang Hsu
  • Patent number: 11948936
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a fin disposed in a first region of the semiconductor device, channel members disposed in a second region of the semiconductor device and stacked in a vertical direction, first and second metal gates disposed on a top surface of the fin, a third metal gate wrapping around each of the channel members, a first implant region in the fin with a first conductivity type, and a second implant region in the fin with a second conductivity opposite the first conductivity type. The fin includes first and second type epitaxial layers alternatingly disposed in the vertical direction. The first and second type epitaxial layers have different material compositions. The first type epitaxial layers and the channel members have the same material composition.
    Type: Grant
    Filed: April 24, 2023
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Hung Wang, Chih Chieh Yeh, Zi-Ang Su, Chia-Ju Chou, Ming-Shuan Li
  • Publication number: 20240105839
    Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.
    Type: Application
    Filed: December 5, 2023
    Publication date: March 28, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ling-Chun Chou, Yu-Hung Chang, Kun-Hsien Lee
  • Publication number: 20240103606
    Abstract: The present disclosure relates to systems and methods for real and virtual object interactions in augmented reality environments are disclosed. The system comprises areal object detection module to receive multiple image pixels and the corresponding depths of at least one initiative object, a real object recognition module to determine a shape, a position, and a movement of the initiative object; a virtual object display module to display a virtual target object, a collision module to determine whether the at least one initiative object collides into a virtual target object and, an interaction module for determining an action responding to an event based on at least one of an object recognition determination from the real object recognition module, a collision determination from the collision module, and a type of the virtual target object.
    Type: Application
    Filed: January 25, 2022
    Publication date: March 28, 2024
    Applicant: HES IP HOLDINGS, LLC
    Inventors: Yung-Chin HSIAO, Ya-Chun CHOU, Shan-Ni HSIEH, Chun-Hung CHO, Te-Jen KUNG, I-Chun YEH
  • Patent number: 11942543
    Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai
  • Publication number: 20240085667
    Abstract: A photolithography projection lens, having a plurality of lens elements and a light diaphragm arranged among them, arranged along an optical axis, and comprising an object side and an image side respectively arranged at the front and rear ends of the plurality of lens elements; wherein: the diopters of the two lenses respectively near the object side and the image side must be positive; each of the lens elements is a single lens without cement; the angle between the chief rays at different image height positions and the optical axis is <1 degree, and the angle between the chief rays at different object height positions and the optical axis is <1 degree; and under the projection of 350˜450 nm wavelength light, it provide the imaging effect of precise magnification.
    Type: Application
    Filed: September 14, 2022
    Publication date: March 14, 2024
    Inventors: SHENG CHE WU, YU HUNG CHOU, YI HUA LIN, YUAN HUNG SU
  • Publication number: 20240089608
    Abstract: The present invention relates to a dynamic image generating method and a dynamic image sensor thereof. The dynamic image sensor includes a first exposure pixel, a second exposure pixel and an image processing module. The dynamic image sensor applies the dynamic image generating method, which generates the default short-exposure image signal by exposing the first exposure pixel for default short-exposure time, and exposing the second exposure pixel for default long-exposure time to generate the default long-exposure image signal. The image processing module confirms whether the default short-exposure image and the default long-exposure image signals are between the lower and upper limits of pinching.
    Type: Application
    Filed: August 25, 2023
    Publication date: March 14, 2024
    Inventors: Ping-Hung Yin, Yung-Ming Chou
  • Publication number: 20240085671
    Abstract: An annular light trapping component includes an inner surface, an outer surface, an object-side surface and an image-side surface. The inner surface includes multiple L-shaped annular grooves. The annular light trapping component includes multiple stripe-shaped structures in the L-shaped annular grooves. The L-shaped annular grooves include an object-side L-shaped annular groove closest to the object-side surface and an image-side L-shaped annular groove closest to the image-side surface. A bottom diameter of the image-side L-shaped annular groove is larger than a bottom diameter of the object-side L-shaped annular groove. Each L-shaped annular groove includes a first side and a second side located between the object-side surface and the image-side surface. The stripe-shaped structures are disposed on the first side or the second side. A degree of inclination between the first side and the central axis is larger than a degree of inclination between the second side and the central axis.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Applicant: LARGAN PRECISION CO., LTD.
    Inventors: Ming-Ta CHOU, Cheng-Feng LIN, Wei-Hung WENG
  • Publication number: 20240089611
    Abstract: The present invention relates to a method of image fusion, which uses the brightness difference of the current frame and the previous frame to determine whether the pixel in a frame image is static or dynamic. If the current pixel is static, the previous corresponding pixel is superimposed onto the current pixel; if the current pixel is dynamic, the previous corresponding pixel is replaced with the current pixel.
    Type: Application
    Filed: September 7, 2023
    Publication date: March 14, 2024
    Inventors: Ping-Hung Yin, Yung-Ming Chou, Bo-Jia Lin, Yu-Sheng Liao
  • Publication number: 20240087953
    Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Inventors: Yu-Hung Lin, Sheng-Hsuan Lin, Chih-Wei Chang, You-Hua Chou
  • Patent number: 11925912
    Abstract: The disclosure features a system that includes a plurality of material tanks, each of which includes at least one material for forming a chemical composition and includes a first recirculation loop; at least one mixing tank in which the materials from the material tanks are mixed to form a chemical composition, the mixing tank including a second recirculation loop; and at least one holding tank configured to continuously receive the chemical composition from the mixing tank, the holding tank including a third recirculation loop. The system may further include a plurality of fluid flow controller units and be configured to form material and chemical composition flows in an in-process steady state.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: March 12, 2024
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Shih-Pin Chou, Wen-Hung Chang, Deepak Mahulikar, Tamas Varga, Abhudaya Mishra
  • Publication number: 20240079485
    Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.
    Type: Application
    Filed: October 27, 2022
    Publication date: March 7, 2024
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Jih-Wen Chou, Chih-Hung Lu, Bo-An Tsai, Zheng-Chang Mu, Po-Hsien Yeh, Robin Christine Hwang
  • Patent number: 11923425
    Abstract: A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.
    Type: Grant
    Filed: February 17, 2023
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Cheng Chiu, Tian Sheng Lin, Hung-Chou Lin, Yi-Min Chen, Chiu-Hua Chung
  • Patent number: 11917436
    Abstract: A base station (BS) and a method for wireless communication are provided. The method includes transmitting a first radio resource control (RRC) configuration that configures a radio link monitoring configuration that includes a beam failure detection (BFD) timer and a beam failure indication (BFI) count threshold. The first RRC configuration enables a user equipment (UE) to: start or restart the BFD timer by a medium access control (MAC) entity of the UE each time a BFI is received from a lower layer; and initiate a beam failure recovery (BFR) procedure upon determining that the number of the received BFIs is greater than or equal to the BFI count threshold. The method further includes transmitting a second RRC configuration that reconfigures the radio link monitoring configuration. The second RRC configuration enables the UE to set the BFI counter to zero in response to receiving the second RRC configuration.
    Type: Grant
    Filed: March 7, 2023
    Date of Patent: February 27, 2024
    Assignee: FG Innovation Company Limited
    Inventors: Chia-Hung Wei, Chie-Ming Chou
  • Patent number: 11914429
    Abstract: An electronic device includes a host, a display, a sliding plate, and a keyboard. The host has an operating surface. The display is pivoted to the host. The sliding plate is slidably disposed in the host, where the display is mechanically coupled to the sliding plate, and the sliding plate includes a plat portion and a recess portion that are arranged side by side. The keyboard is integrated to the host. The keyboard includes a key structure, where the key structure includes a key cap and a reciprocating element, and the key cap is exposed from the operating surface of the host. The reciprocating element is disposed between the key cap and the sliding plate and has a first end connected to the key cap and a second end contacting the sliding plate. The second end is located on a sliding path of the plat portion and the recess portion.
    Type: Grant
    Filed: March 9, 2023
    Date of Patent: February 27, 2024
    Assignee: Acer Incorporated
    Inventors: Hung-Chi Chen, Shun-Bin Chen, Huei-Ting Chuang, Yen-Chieh Chiu, Yu-Wen Lin, Yen-Chou Chueh, Po-Yi Lee
  • Patent number: 11905299
    Abstract: The present disclosure relates generally to modulators of Cot (cancer Osaka thyroid) and methods of use and manufacture thereof.
    Type: Grant
    Filed: May 11, 2021
    Date of Patent: February 20, 2024
    Assignee: Gilead Sciences, Inc.
    Inventors: Elizabeth M. Bacon, Gayatri Balan, Chien-Hung Chou, Christopher T. Clark, Jeromy J. Cottell, Musong Kim, Thorsten A. Kirschberg, John O. Link, Gary Phillips, Scott D. Schroeder, Neil H. Squires, Kirk L. Stevens, James G. Taylor, William J. Watkins, Nathan E. Wright, Sheila M. Zipfel