Abstract: A flip-chip packaging substrate and a method for fabricating the same are disclosed. The method includes stacking a plurality of insulating layers having conductive posts in a manner that the conductive posts are stacked on and in contact with one another. The insulating layers and the conductive posts serve as a core layer structure of the flip-chip packaging substrate. As such, the conductive posts having small-sized end surfaces can be fabricated according to the practical need. Therefore, when the thickness of the core layer structure is increased, the present disclosure not only increases the rigidity of the flip-chip packaging substrate so as to avoid warping, but also ensures the design flexibility of the small-sized end surfaces of the conductive posts, allowing high-density electrical connection points and fine-pitch and high-density circuit layers to be fabricated on the core layer structure.

Abstract: An inductance structure is provided and includes a plurality of inductance traces embedded in an insulating body and at least one shielding layer that is embedded in the insulating body and free from being electrically connected to the inductance traces. The shielding layer has a plurality of line segments that are free from being connected to one another. The shielding layer shields the inductance traces to improve the inductance value and quality factor.

Abstract: An information handling system may include a backplane configured to couple at a first side thereof to a plurality of physical storage resources, an air mover configured to provide cooling to the information handling system, and a shelf coupled to the backplane at a second, opposite side thereof, wherein the shelf is disposed between the first side of the backplane and the air mover. The shelf may include an acoustically absorbent material.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a well, an oxidation layer, a gate electrode and a shared source/drain electrode. The substrate has a first surface and a second surface opposite to each other. The well is formed in the substrate. The substrate and the well have a first conductivity type and a second conductivity type respectively. The oxidation layer is formed in the well. The gate electrode is formed above the first surface and has a first opening. The shared source/drain electrode is formed near the first surface in the oxidation layer and exposed from the first opening. The shared source/drain electrode has the first conductivity type.

Abstract: An optical lens system using ultraviolet for imaging includes, in order from a magnified side to a minified side, a first lens group of positive refractive power and a second lens group of positive refractive power. The second lens group includes at least one cemented lens and at least one aspheric lens. The optical lens system satisfies the condition of TE(?=400)>94%, where TE(?=400) denotes an overall transmittance of all of the lenses in the optical lens system measured at a wavelength of 400 nm and is equal to a product of respective internal transmittances of all of the lenses measured at a wavelength of 400 nm.

Abstract: A semiconductor package substrate, a method for fabricating the same, and an electronic package having the same are provided. The method includes: providing a circuit structure having a first solder pad and a second solder pad; forming on the circuit structure a metal sheet having a first hole, from which the first solder pad is exposed, and a second hole, from which the second solder pad is exposed; and forming an insulation layer on the metal sheet and a hole wall of the second hole. A first conductive element that is to be grounded is disposed in the first hole and is in contact with the metal sheet and the first solder pad. Therefore, heat generated in a signal transmission process is dissipated by the metal sheet and the first conductive element.

Abstract: Wide angle lens for imaging objects disposed away from the optical axis towards the periphery of the field of view.

Abstract: An intermediate substrate is provided with a plurality of conductive posts and support members arranged at opposite sides of a coreless circuit structure and insulating layers encapsulating the conductive posts and the support members. Through the arrangement of the support members and the insulating layers, the intermediate substrate can meet the rigidity requirement so as to effectively resist warping and achieve an application of fine-pitch circuits.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A wireless input apparatus is provided, applied to a computer host. The wireless input apparatus includes a wireless dongle and an input module. The wireless dongle is physically connected to the computer host to receive an effect command, and includes a data segmentation unit and a first transceiver unit. The data segmentation unit segments the effect command into a plurality of data segments. The first transceiver unit sequentially transmits the plurality of data segments outwards. The input module includes a second transceiver unit, a merging unit, an effect generation unit, and a control unit. The second transceiver unit is coupled to the first transceiver unit to sequentially receive the plurality of data segments. The merging unit merges the plurality of data segments into the effect command. The control unit receives the effect command, and controls the effect generation unit to generate an effect according to the effect command.

Abstract: A color-mixing lighting control method is used for receiving an original color-mixing light data to control a color-mixing light source. The color-mixing light source includes a plurality of light-emitting elements to produce a plurality of emission colors. The original color-mixing light data includes a plurality of original light intensity values corresponding to the emission colors. The color-mixing lighting control method comprising: determining a maximum value of the original light intensity values; calculating the light intensity percentage of each of the emission colors in the original color-mixing light data according to the original light intensity values; generating the corrected light intensity value of each of the emission colors according to the maximum value and the light intensity percentage of each of the emission colors; and respectively controlling the light-emitting elements by using the corresponding corrected light intensity value of each of the emission colors.

Abstract: A semiconductor package carrier board, a method for fabricating the same, and an electronic package having the same are provided. The method includes forming on a circuit structure a graphene layer that acts as an insulation heat dissipating layer. Since the heat conductivity of the graphene layer is far greater than the heat conductivity of ink (about 0.4 W/m·k), which is used as solder resist, the heat of the semiconductor package carrier board can be conducted quickly, and thus can avoid the problem that the heat will be accumulated on the semiconductor package carrier board.

Abstract: A semiconductor package structure includes a substrate. The substrate includes a first ground layer. The first ground layer has a body and a first tooth protruding from a side of the body. The first tooth has a first lateral side. The first lateral side of the first tooth is inclined relative to the side of the body in a top view of the first ground layer.

Abstract: A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.

Abstract: A cantilever force sensor with relatively lower On-Force is disclosed, which comprises a top stack, a bottom stack, and a spacer. The first spacer is configured between the top stack and the bottom stack and configured in a first side of the force sensor. A second side, opposite to the first side, of the top stack, is cantilevered from the bottom stack. When the force sensor is depressed from the top side, the second side of the top stack moves down using the first spacer as a fulcrum. Since the cantilevered side can be easily depressed down so that the On-Force for the force sensor is reduced and hence a force sensor with a relatively higher sensitivity is created.

Abstract: Methods are proposed to derive measurement results for User Equipment (UE) antenna selection, beam selection, cell selection, handover, and radio resource management (RRM). First, UE determines its mobility state by using at least two of the following metrics: 1) Doppler information (e.g., from mobility detection gear, MD); 2) beam ping-pong rate, beam change rate, beam change per time period; and 3) moving speed and moving direction from an accelerometer sensor, rotation speed from a gyroscope, ambient magnetic field from a magnetic field sensor, and at least one active antenna set. Next, UE uses an averaging number that is adapted based on its mobility state to derive an average measurement result including at least one of RSRP, RSRQ, RSSI, IL, SNR, and SINR. Finally, UE performs antenna selection, beam selection, cell selection, or RRM based on the average measurement result and joint consideration.

Abstract: A method for downlink transmission in a cloud radio access network for a number of users is applied in a central unit. The central unit determines a specific number of remote radio heads (RRHs) as non-serving RRHs based on a predetermined data compression ratio. For each of many pieces of user equipment (UEs), the central unit determines a combination of RRHs which are non-serving in coordinated multi-point transmission (CoMP) from a plurality of RRHs based on the determined specific number, and then performs CoMP downlink transmission based on the combination of RRHs which are non-serving in the CoMP.

Abstract: Preventing Transport Layer Security session man-in-the-middle attacks is provided. A first security digest generated by an endpoint device is compared with a second security digest received from a peer device. It is determined whether a match exists between the first security digest and the second security digest based on the comparison. In response to determining that a match does not exist between the first security digest and the second security digest, a man-in-the-middle attack is detected and a network connection for a Transport Layer Security session is terminated with the peer device.

Abstract: An antenna structure with a wide beamwidth includes a dielectric substrate, a ground plane, a first radiation element, a plurality of first conductive via elements, and a first feeding connection element. The dielectric substrate has a first surface and a second surface which are opposite to each other. The ground plane is disposed on the second surface of the dielectric substrate. The first radiation element is disposed on the first surface of the dielectric substrate. A first notch is formed on the first radiation element. The first conductive via elements penetrate the dielectric substrate. The first conductive via elements are coupled between the first radiation element and the ground plane. The first feeding connection element is coupled to the first radiation element. The first feeding connection element extends into the first notch of the first radiation element.

Abstract: A multifunctional shaft apparatus includes a shaft base, a spindle, a tool holder, an ultrasonic vibration assembly, a laser light source and a mirror assembly. The spindle is disposed in the shaft base. The spindle has a laser channel extending along the spindle. The tool holder is disposed on the spindle. The tool holder has a hollow passage, an inner space and a recessed portion. The hollow passage is communicated with the laser channel. An inner wall of the hollow passage has at least one through hole communicated with the inner space, and the recessed portion is disposed on a bottom surface of the tool holder. The bottom surface has a light outlet. The ultrasonic vibration assembly includes a vibration member disposed in the recessed portion. The mirror assembly is disposed in the tool holder and is configured to reflect the laser light beam generated by the laser light source.