Hung-Yueh Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: One embodiment of the present invention provides a system having a nonvolatile memory comprising a p type semiconductor substrate, an oxide layer over the p type semiconductor substrate, a nitride layer over the oxide layer, an additional oxide layer over the nitride layer, a gate over the additional oxide layer, two N+ junctions in the p type semiconductor layer, a source and drain respectively formed in the two N+ junctions, a first bit and a second bit in the nonvolatile memory, and accordingly at least two states of operation (i.e., erase and program) therefor. That is, one bit in the nonvolatile memory can either be in an erase state or program state. For erasing a bit, electrons are injected at the gate of the nonvolatile memory. For programming a bit, electric holes are injected or electrons are reduced for that bit.
January 14, 2004
July 29, 2004
Chih Chieh Yeh, Hung Yueh Chen, Yi Ying Liao, Wen Jer Tsai, Tao Cheng Lu