Abstract: The present embodiments provide a stacked memory apparatus and a repairing method thereof which store information about a spare resource in a pre-bond process, check a spare resource available in a post-bond process, correct an error through an error correction code, and variably use the same number of spare resources to additionally ensure a number of spare resources in the post-bond process, thereby improving a yield.

Abstract: The disclosure relates to a radar device and a control method. Specifically, according to the disclosure, a radar device comprises a transmitter controlling to transmit a frequency-modulated transmission signal, a receiver receiving a reception signal which is the transmitted transmission signal reflected by an object, an angle estimator estimating a first angle for a position of the object, with respect to a host vehicle, during one frame, based on a result obtained by performing fast Fourier transform (FFT) on the reception signal and estimating a second angle which is a virtual angle for the position of the object during a plurality of frames, and a controller calibrating the first angle by comparing the estimated first angle and the estimated second angle.

Abstract: A semiconductor device includes a substrate, a bit line conductive layer disposed on the substrate and extending in a first lateral direction substantially parallel to a surface of the substrate, first and second channel structures disposed on the bit line conductive layer to be spaced apart from each other in the first lateral direction, first and second gate dielectric layers disposed on side surfaces of the first and second channel structures over the substrate, first and second gate line conductive layers disposed on the first and second gate dielectric layers, respectively, the first and second gate line conductive layers common to the first and second channel structures, respectively, and extending in a second lateral direction perpendicular to the first lateral direction and substantially parallel to the surface of the substrate, and first and second storage node electrode layers disposed over the first and second channel structures, respectively.

Abstract: A nonvolatile memory device includes a substrate having an upper surface and a channel structure disposed over the substrate. The channel structure includes at least one channel layer pattern and at least one interlayer insulation layer pattern, which are alternately stacked in a first direction perpendicular to the upper surface, and the channel structure extends in a second direction perpendicular to the first direction. The nonvolatile memory device includes a resistance change layer disposed over the substrate and on at least a portion of one sidewall surface of the channel structure, a gate insulation layer disposed over the substrate and on the resistance change layer, and a plurality of gate line structures disposed over the substrate, each contacting a first surface of the gate insulation layer and disposed to be spaced apart from each other in the second direction.

Abstract: There are provided a variable resistance memory device and a manufacturing method of the same. The variable resistance memory device includes: a first electrode; a second electrode arranged in a vertical direction from the first electrode; and an oxide layer having an oxygen deficient region extending in the vertical direction between the second electrode and the first electrode.

Abstract: Provided herein may be a method of operating a semiconductor device including memory cells each storing multi-bit data. The method includes receiving data that is to be programmed in a memory cell selected from the memory cells; and applying a program pulse to the selected memory cell, the program pulse being determined depending on a logic state of the data and being selected from a group including a first program pulse having a positive polarity, a second program pulse having the positive polarity and having at least one of a peak level, a peak period, and a falling slew rate different from those of the first program pulse, a third program pulse having a negative polarity, and a fourth program pulse having the negative polarity and having at least one of a peak level, a peak period, and a rising slew rate different from those of the third program pulse.

Abstract: A device for charging an electric vehicle includes a charging inlet for receiving charging information and power from electric vehicle supply equipment (EVSE); a control module for determining a charging mode on the basis of the charging information, and outputting a control signal according to the determined charging mode; and a charging unit for charging a battery of the electric vehicle according to the control signal from the control module.

Abstract: A memory cell includes a first electrode, a second electrode, a variable resistance layer located between the first electrode and the second electrode, and a ferroelectric layer located between the variable resistance layer and the second electrode, wherein the variable resistance layer is maintained in an amorphous state during a program operation.

Abstract: A cathode active material precursor according to embodiments of the present invention includes a composite hydroxide particle in which primary precursor particles are aggregated. The primary precursor particles include a particle having a triangular shape in which a minimum interior angle is 300 or more and a ratio of a length of a short side relative to a length of a long side is 0.5 or more. A cathode active material and a lithium secondary having improved high temperature stability is provided using the cathode active material precursor.

Abstract: Provided herein may be a semiconductor device. The semiconductor device may include a stack including word lines, a bit line penetrating the stack, a global bit line disposed above the stack, global word lines disposed above the stack, a common select line disposed above the stack, a first contact plug coupling the global bit line and the bit line to each other and penetrating the common select line, and second contact plugs coupling the global word lines and the word lines to each other respectively and penetrating the common select line.

Abstract: Provided is a lithium secondary battery containing a cathode active material capable of preventing decreases in power and cycle life occurring at the time of adding a sulfur based additive used in order to improve high-temperature storage characteristics to an electrolyte.

Abstract: Provided is a lithium secondary battery including a cathode containing a cathode active material in which a central part has a different concentration from a surface part, and a conductive material having a specific composition ratio, and specifically, a lithium secondary battery including a cathode containing a cathode active material in which a central part of one or more kinds of metals configuring the cathode active material has a different concentration from a surface part thereof, and two or more kinds of conductive materials mixed at a specific ratio, thereby having excellent stability and high low-temperature characteristic and high output characteristic as compared to a conventional lithium secondary battery.

Abstract: The present disclosure relates to a control apparatus and a control method of an adaptive cruise control system.

Abstract: A semiconductor device includes: a first bit line extending in a first direction; a first word line extending in a second direction intersecting the first direction; a first transistor located at a first intersection of the first word line and the first bit line, the first transistor being connected to the first word line and the first bit line; a first capacitor electrically connected to the first transistor, the first capacitor being located at a first part of the first intersection; a second capacitor electrically isolated from the first transistor, the second capacitor being located at a second part of the first intersection; and a second transistor electrically connected to the second capacitor, the first capacitor and the second capacitor being located between the first transistor and the second transistor.

Abstract: A lithium secondary battery includes a cathode formed from a cathode active material including a cathode active material particle having a specific concentration ratio, an anode; and a separation layer interposed between the cathode and the anode. The lithium secondary battery has improved formation discharge amount, formation discharge efficiency and power output.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes: a substrate having a substantially horizontal upper surface; first to Nth layers (where N is a natural number of two or more) disposed in horizontal layers on the substrate and spaced apart from each other above the substrate in a vertical direction, wherein each of the first to Nth layers includes a plurality of conductive lines; an insulating layer disposed to fill spaces between the conductive lines; a hole having sidewalls that extends in the vertical direction through the conductive lines of the first to Nth layers and the insulating layer therebetween; a variable resistance layer disposed on the sidewalls of the hole; and a conductive pillar disposed to fill the hole in which the variable resistance layer is formed.

Abstract: A light source driving device may include a DC-DC conversion unit for generating an output voltage by adjusting a level of an input voltage, and a first light-emitting unit and a second light-emitting unit, which are driven by the output voltage of the DC-DC conversion unit. A regulator may be connected to the output end of the second light-emitting unit, and a controller may have a feedback terminal connected to the output ends of the first light-emitting unit and the second light-emitting unit. The regulator may operate such that a preset target current is supplied to the second light-emitting unit. The controller may adjust a duty of the pulse control signal based on the entire preset target current of the first light-emitting unit and the second light-emitting unit and the feedback current inputted through the feedback terminal.

Abstract: The disclosure provides recombinant polypeptides for treating or preventing viral infection comprising an immunoglobulin Fc fragment and at least one viral receptor or fragment thereof. Also provided are RNA molecules, therapeutic compositions, and expression systems comprising such recombinant polypeptides, along with methods of preventing or treating a viral infection in a subject in need thereof, comprising administering such recombinant polypeptides to a subject or patient.

Abstract: Provided is a voice sensor comprising a piezoelectric material layer includes a substrate, a support layer, a metal layer, a piezoelectric material layer on the metal layer and an electrode on the piezoelectric material layer, and the substrate integrally supports a device layer of the voice sensor by exposing a part of a thin film including the piezoelectric material layer, the electrode and a polymer layer.

Abstract: A lithium secondary battery includes a cathode formed from a cathode active material including a cathode active material particle having a specific concentration ratio, an anode; and a separation layer interposed between the cathode and the anode. The lithium secondary battery has improved formation discharge amount, formation discharge efficiency and power output.