Abstract: An optical device is provided. The optical device includes: a lens including first and second reflective members; and a flexible display device including a first display area disposed on a first side surface of the lens and a second display area disposed on a second side surface of the lens, wherein the first reflective member is configured to reflect a first image displayed on the first display area to a first surface of the lens, and the second reflective member is configured to reflect a second image displayed on the second display area to the first surface of the lens.

Abstract: A optical device includes: a display device configured to output a display image; a lens on one side of the display device; and a polarization control unit between the display device and the lens and configured to output the display image output from the display device as first polarized light or second polarized light, wherein the lens comprises: a first polarizing mirror configured to reflect a display image of the first polarized light and to transmit a display image of the second polarized light; and a second polarizing mirror configured to reflect a display image of the second polarized light and to transmit a display image of the first polarized light.

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

Abstract: Provided is a method for quantifying A? in plasma by treating the plasma with MPP and/or TCEP, and a method for diagnosing, using the quantifying method, whether or not clinical cognitive deterioration and pathological A? accumulation occur. Through cut-off values of measured values measured by the method for quantifying A? according to the present subject matter, it is possible to identify normal, MCI and AD subjects and determine whether or not accumulation of A? in the brain occurs, and it is possible to predict progression to AD.

Abstract: In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.

Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

Abstract: In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.

Abstract: Provided is a molten material treatment apparatus including: a container having an upper portion, on which a molten material injection part is disposed, and a bottom part in which a hole is formed; a gas injection part attached to the bottom part between the molten material injection part and the hole; a chamber part formed on the upper portion of the container so as to face the gas injection part and having an inside open downward; and a plurality of vertical members disposed so as to cross a plurality of positions of a rotary flow region formed between the chamber part and the bottom part, wherein an inclusion removal efficiency can be improved while maintaining the molten material surface by a method in which a plurality of mutually different rotary flows are generated in a plurality of sections within the rotary flow region and are partially overlapped.

Abstract: Provided is a meniscus flow control device that includes: a meniscus flow detection unit for detecting, in a meniscus flow form of molten steel, relative temperature values for positions measured by temperature measurers, and relatively comparing the temperature values measured by the temperature measurers to thereby determine the flow state of the molten steel meniscus to be normal or abnormal; a magnetic field generation unit, installed outside a mold, for generating a magnetic field and controlling the flow of the molten steel by the magnetic field; and a flow control unit for maintaining the operation of the magnetic field generation unit in the current state when the meniscus flow state detected by the meniscus flow detection unit is determined to be normal, and for controlling the magnetic field generation unit to adjust the meniscus flow to be normal when the detected meniscus flow state is determined to be abnormal.

Abstract: In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.

Abstract: A method of forming a gate structure for a semiconductor device that includes forming first spacers on the sidewalls of replacement gate structures that are present on a fin structure, wherein an upper surface of the first spacers is offset from an upper surface of the replacement gate structure, and forming at least second spacers on the first spacers and the exposed surfaces of the replacement gate structure. The method may further include substituting the replacement gate structure with a functional gate structure having a first width portion in a first space between adjacent first spacers, and a second width portion having a second width in a second space between adjacent second spacers, wherein the second width is greater than the first width.

Abstract: Provided is a method for preparing boron nitride nanotubes, the method including: injecting a boron-metal catalyst composite into a reaction chamber; injecting a nitrogen precursor into the reaction chamber; producing a decomposition product of the boron-metal catalyst composite in a gas state by irradiating the boron-metal catalyst composite with a carbon dioxide laser or a free electron laser; and forming boron nitride nanotubes by reacting the decomposition product of the boron-metal catalyst composite in the gas state with the nitrogen precursor.

Abstract: An optical device includes: a lens including a first reflector; a display device at a first side surface of the lens and including a plurality of subpixels; and a lens array between the lens and the display device and including a plurality of lenses configured to condense light from the subpixels onto the first reflector.

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

Abstract: An optical device is provided. The optical device includes: a lens including first and second reflective members; and a flexible display device including a first display area disposed on a first side surface of the lens and a second display area disposed on a second side surface of the lens, wherein the first reflective member is configured to reflect a first image displayed on the first display area to a first surface of the lens, and the second reflective member is configured to reflect a second image displayed on the second display area to the first surface of the lens.

Abstract: An augmented reality providing apparatus is provided. The augmented reality providing apparatus includes a lens including a first lens portion including a first reflective member, and a second lens portion including a second reflective member, and a display device on one side of the lens for displaying first and second images, wherein the first reflective member reflects the first image at a first angle, and the second reflective member reflects the second image at a second angle that is different from the first angle.

Abstract: A optical device includes: a display device configured to output a display image; a lens on one side of the display device; and a polarization control unit between the display device and the lens and configured to output the display image output from the display device as first polarized light or second polarized light, wherein the lens comprises: a first polarizing mirror configured to reflect a display image of the first polarized light and to transmit a display image of the second polarized light; and a second polarizing mirror configured to reflect a display image of the second polarized light and to transmit a display image of the first polarized light.

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

Abstract: A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.

Abstract: A method for determining concentration and pressure of respective gas consisting of multi-gas using emitting and receiving of ultrasound includes: measuring a reference ultrasound flight time; measuring ultrasound flight times at plural concentrations, temperatures and pressures; obtaining an ultrasound flight time table comprising ultrasound flight time change values which are differences between the reference ultrasound flight time, which varies according to parameters of concentration, temperature and pressure, and the measured ultrasound flight time; obtaining an ultrasound amplitude table comprising ultrasound amplitude values of a waveform of a predetermined sequence of the received ultrasound waveform at plural concentrations, temperatures and pressures in a state that concentration, temperature and pressure of the target respective gas are parameters; and calculating the concentration and the pressure of the target gas based on performing temperature compensations for the ultrasound flight time change