Abstract: According to various example embodiments, a method for sharing a content group of an electronic device may include transmitting, to a server, information for a request to share a content group; receiving an input selecting at least one contact with which the content group is to be shared; transmitting information on the at least one contact to the server; and changing the content group to a shared state when information on the acceptance of sharing the content group from at least one external electronic device corresponding to the at least one contact is received from the server, wherein the content group is capable of being updated by the electronic device or the at least one external electronic device.

Abstract: A server for providing selected content to networked display devices is presented. The server includes a memory configured to store instructions. At least one processor is configured to execute the instructions to: receive television programming data and automatic content recognition data from a networked display device, and selectively link the networked display device to a viewing group based on the television programming data and automatic content recognition data. An advertisement engine is configured to provide an advertisement to the networked display device. The advertisement is selected based on the viewing group linked to the networked display device.

Abstract: Provided are a photoresist composition and a method of manufacturing a semiconductor device using the same. The method of manufacturing a semiconductor device comprises forming a mask layer and a photoresist layer on a substrate, forming a photoresist pattern by patterning the photoresist layer, forming a mask pattern by patterning the mask layer through the photoresist pattern and forming a pattern by etching the substrate using the mask pattern, wherein the formation of the photoresist layer comprises forming the photoresist layer, using a photoresist composition comprising a polymer which includes a protecting group that causes decarboxylation by radical.

Abstract: A cartridge for a recording medium and an image forming apparatus are provided. The image forming apparatus includes a housing, a printing unit disposed inside the housing, and having a thermal head with a heating element, and a cartridge for a recording medium, in which a recording medium wound in a roll shape is installed and which is provided to supply the recording medium to the printing unit, wherein the cartridge for a recording medium has a de-curl roller which guides the recording medium to be curved in a direction opposite to a winding direction, and is provided to be movable in a direction adjacent to the recording medium when the recording medium is supplied to the printing unit.

Abstract: A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.

Abstract: A photoresist polymer comprising a first repeating unit including a halogen donor group and a second repeating unit including a protecting group connected by a sulfide bond.

Abstract: A method of forming a semiconductor device includes forming an etching layer on a substrate, forming a photoresist layer on the etching layer, forming an exposed area configured to define an unexposed area in the photoresist layer, forming a hardmask layer on the exposed area using a selective deposition process, partially removing the photoresist layer using the hardmask layer as an etch mask and forming a photoresist pattern, and etching the etching layer using the photoresist pattern as an etch mask and forming a fine pattern.

Abstract: A photoresist composition includes a photoresist polymer including a repeating unit to which a silicon-containing leaving group is combined, a photo-fluorine generator including a sulfonium fluoride, and a solvent.

Abstract: A device for switching a connection relationship between an input channel and an output channel group determined according to a selection mode, a magnetic resonance imaging (MRI) apparatus including the switching device, and a method for controlling the MRI apparatus are disclosed. The device includes: a plurality of input channels capable of being respectively connected to a plurality of coils, each of which receives a radio frequency (RF) signal from a target object to which a magnetic field is applied; a plurality of output channels capable of being connected to an image processor designed to generate a magnetic resonance image on the basis of the received RF signal; and a switching portion configured to switch a connection relationship between the plurality of input channels and the plurality of output channels.

Abstract: An electrolyte for a rechargeable lithium battery and a rechargeable lithium battery, the electrolyte including a lithium salt, a non-aqueous organic solvent, and an additive represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, R1 to R3 are each independently a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a substituted or unsubstituted C2 to C30 heteroarylene group.

Abstract: According to an aspect, document-based requirement identification and extraction includes parsing a set of documents and identifying relationships among parsed components of the documents and applying the parsed components and identified relationships to a meta-model that defines requirements. The requirements include a statement expressing a need and/or responsibility. A further aspect includes identifying candidate requirements and their candidate topics from results of the applying. For each of the identified candidate topics, a feature vector is built from the corresponding candidate requirements. A further aspect includes training the meta-model with the feature vectors, validating the meta-model, and classifying output of the validating to identify a subset of the candidate requirements, and corresponding topics expressed in the set of documents.

Abstract: Example embodiments relate to a method of forming a photoresist pattern and a method of fabricating a semiconductor device using the same. The method of fabricating a semiconductor device comprises forming a mask layer on a substrate, forming a photoresist pattern on the mask layer, the photoresist pattern having pattern portions at a first height and recess portions, applying a first liquid onto the photoresist pattern, filling the recess portions with a pattern filler at a second height, the pattern filler having an higher etch rate than the etch rate of the pattern portions to the same etchant, removing the first liquid, etching the pattern filler after removing the first liquid, etching the mask layer via the photoresist pattern to form a mask pattern, and etching the substrate via the mask pattern to form a fine pattern.

Abstract: A photoresist polymer comprising a first repeating unit including a halogen donor group and a second repeating unit including a protecting group connected by a sulfide bond.

Abstract: An electrolyte for a rechargeable lithium battery includes a non-aqueous organic solvent; a lithium salt; a first compound represented by Chemical Formula 1; and a second compound represented by Chemical Formula 2, wherein an amount of the first compound is about 0.05 wt % to about 10 wt % and an amount of the second compound is about 0.05 wt % to about 10 wt %. In Chemical Formulae 1 and 2, the substituents are the same as defined in the detailed description.

Abstract: A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.

Abstract: There is provided a patterning process that forms a negative pattern by developing using an organic solvent, using a resist top coat composition that not only reduces the effect from the environment on a resist film and effectively blocks OOB light, but also reduces the film loss of a resist pattern and the bridging between patterns, enhances the sensitivity of the resist film, and suppresses the emission of an outgas from the resist film. The patterning process includes the steps of forming a resist top coat on a photoresist film formed on a substrate, with the resist top coat using as a top base material a polymer having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group, in which m is 1 or 2, and p is 0<p?1.0; performing EUV exposure using an electron beam or having a wavelength of 3 nm to 15 nm; and forming a negative pattern by developing using an organic-solvent-based developer.

Abstract: A system to pair a mobile electronic device to an output device to output content from content data stored on a memory component, the memory component located in the mobile electronic device or locatable by the mobile electronic device includes a pairing server configured to send the content data to the output device in response to an output request by the mobile electronic device, a short range communication tag associated with the output device, and comprising identifying data associated with the output device, and a short range communication module communicatively and removeably coupled to, or comprising an element of, the mobile electronic device; and configured to receive the identifying data from the short range communication tag.

Abstract: In a method of forming a pattern of a semiconductor device, a hard mask layer is formed on a substrate. A photoresist film is coated on the hard mask layer. The photoresist film is exposed and developed to form a first photoresist pattern. A smoothing process is performed on the first photoresist pattern to form a second photoresist pattern having a roughness property lower from that of the first photoresist pattern. In the smoothing process, a surface of the first photoresist pattern is treated with an organic solvent. An ALD layer is formed on a surface of the second photoresist pattern. The ALD layer is anisotropically etched to form an ALD layer pattern on a sidewall of the second photoresist pattern. The hard mask layer is etched using the second photoresist pattern and the ALD layer pattern as an etching mask to form a hard mask pattern.

Abstract: An electronic device and a method for controlling the same are provided. The method includes obtaining a depth image using a depth camera, extracting a hand area including a hand of a user from the obtained depth image, modeling fingers and a palm of the user included in the hand area into a plurality of points, and sensing a touch input based on depth information of one or more of the plurality of modeled points.

Abstract: In a method of forming a pattern, a lower coating layer and a photoresist layer are sequentially formed on an object layer. An exposure process may be performed such that the photoresist layer is divided into an exposed portion and a non-exposed portion. A portion of the lower coating layer overlapping or contacting the exposed portion is at least partially transformed into a polarity conversion portion that has a polarity substantially identical to that of the exposed portion. The non-exposed portion of the photoresist layer is selectively removed.