Abstract: A semiconductor device may test a semiconductor memory device by storing a data sample that is sampled from among data requested to be written into a semiconductor memory device and by comparing the data sample with data read from the semiconductor memory device which corresponds to the data sample.

Abstract: An electrode assembly includes an electrode stack that includes a positive electrode, a negative electrode, and a separator, the separator being interposed between the positive electrode and the negative electrode, a positive electrode tab projecting from an edge of the electrode stack, and a negative electrode tab projecting from an edge of the electrode stack. The electrode stack may have a height direction, a width direction, and a thickness direction, the thickness direction being substantially perpendicular to a plane that includes the height and width directions, the electrode stack having a first thickness in the thickness direction at a first location corresponding to at least one of the positive and negative electrode tabs, the electrode stack having a second thickness in the thickness direction at a second location peripheral to the first location, the first thickness being greater than the second thickness.

Abstract: The present invention relates to a method for providing an app store service which implements 3rd party-based app stores by using a user's client and links the implemented app stores so as to be distributed by the 3rd party, and to a system for the same. The app store service system of the present invention includes: a plurality of app stores established for distribution; a mall integration server to manage the establishment and integrated operation of the plurality of app stores, and integrally analyze metadata collected from the plurality of app stores in order to provide app integration search and information on the basis of the plurality of app stores; and a client to perform integrated search and browsing for apps on the basis of the mall integration server and the app stores.

Abstract: This technology relates to smoothly performing a test on a memory circuit having a high memory capacity while reducing the size of a test circuit. A test circuit according to the present invention includes a test execution unit configured to perform a test on a target test memory circuit, an internal storage unit configured to store data for the test execution unit, and a conversion setting unit configured to set a part of or the entire storage space of the target test memory circuit as an external storage unit for storing the data for the test execution unit.

Abstract: An operating method of a semiconductor device may comprise monitoring error handling information corresponding to an address of a semiconductor memory device, setting a refresh period for the address considering the error handling information and requesting a refresh request for the address.

Abstract: A semiconductor device may include: a storage unit configured to store program codes provided through control of a processor core; and a control unit configured to perform a control operation on a semiconductor memory device according to the program codes.

Abstract: An example embodiment is to provide a rechargeable battery capable of including a plurality of electrode assemblies in one pouch while reducing the overall size. According to an example embodiment, a rechargeable battery may include at least one pair of electrode assemblies and a pouch forming one pair of battery cells by accommodating the electrode assemblies and sealing the outside of each electrode assembly, wherein the pouch includes a folding portion formed by folding a sealing portion between the one pair of battery cells.

Abstract: A memory system includes: a controller configured to provide a hidden auto refresh command; and a memory configured to perform a refresh operation in response to the hidden auto refresh command. The controller and the memory communicate with each other so that each refresh address of the controller and the memory has the same value as each other.

Abstract: A system in package (SIP) semiconductor system includes a memory device, a controller, a first input/output terminal, a test control unit, and a second input/output terminal. The controller communicates with the memory device. The first input/output terminal performs communication between the controller and a device external to the SIP semiconductor system. The test control unit controls a predetermined test mode of the memory device. The second input/output terminal performs communication between the test control unit and at least the device external to the SIP semiconductor system.

Abstract: A variable resistance memory device includes a plurality of cell blocks each of which includes a plurality of first lines extending in parallel to each other along a first direction, a plurality of second lines extending in parallel to each other along a second direction crossing the first direction, and a plurality of memory cells including variable resistance layers arranged at intersections of the plurality of first lines and the plurality of second lines and a plurality of selection units coupled to the plurality of first lines and coupling two neighboring cell blocks.

Abstract: A memory system includes a memory unit and a memory controller. The memory unit includes a plurality of memory banks, wherein an information stored in a memory bank is accessed via a word line and a bit line. The memory controller is configured to limit repetitive accessing of a same word line or a same bit line so that the number of consecutive access is less than a predetermined critical value.

Abstract: A memory system includes a processor, one or more volatile memory dies stacked with the processor and one or more nonvolatile memory dies stacked with the processor and the volatile memory dies. The processor transfers data stored in the volatile memory die to the nonvolatile memory die in response to a backup signal, and transfers the data stored in the nonvolatile memory die to the volatile memory die in response to a recovery signal.

Abstract: A semiconductor apparatus includes a first memory die; a second memory die; and a processor configured to provide an external command, an external start address and an external end address which are associated with a read operation, to the first memory die, and provide an external command, an external start address and an external end address, which are associated with a write operation, to the second memory die, in the case where data stored in the first memory die is to be transferred to and stored in the second memory die.

Abstract: A resistance memory device and a memory apparatus and data processing apparatus having the same are provided. The resistance memory device includes a pair of electrode layers and a variable resistance layer interposed between the pair of electrode layers. The variable resistance layer includes at least one variable resistance material layer and a piezoelectric material layer coupled to the at least one variable resistance material layer.

Abstract: A semiconductor integrated circuit includes a multi-chip package having a plurality of semiconductor chips. The semiconductor integrated circuit includes a signal line; and a signal loading compensation section in a semiconductor chip among the plurality of semiconductor chips, configured to apply a designed signal loading to the signal line in response to activation of a test signal. Here, the designed signal loading has a value corresponding to a signal loading component of another semiconductor chip among the plurality of semiconductor chips to the signal line.

Abstract: A memory system includes a memory device and a memory controller. The memory device includes a plurality of memory dies having different page sizes. The memory controller generates a plurality of chip selection signals for activating the plurality of memory dies based on the reordering number of requests received from a processor.

Abstract: A semiconductor system includes a controller; a semiconductor device comprising a plurality of stacked semiconductor chips stacked over the controller, and a plurality of through-silicon vias (TSVs) configured to commonly transfer a signal to the plurality of stacked semiconductor chips; and a defect information transfer TSV configured to transfer TSV defect information sequentially outputted from at least one of the semiconductor chips to the controller, wherein the controller comprises: a plurality of first repair fuse units configured to set first fuse information based on the TSV defect information; and a plurality of first TSV selection units configured to selectively drive the TSVs in response to the first fuse information.

Abstract: An operating method of a semiconductor device may comprise monitoring error handling information corresponding to an address of a semiconductor memory device, setting a refresh period for the address considering the error handling information and requesting a refresh request for the address.

Abstract: A semiconductor device may test a semiconductor memory device by storing a data sample that is sampled from among data requested to be written into a semiconductor memory device and by comparing the data sample with data read from the semiconductor memory device which corresponds to the data sample.

Abstract: A memory system includes a processor and a plurality of memories. The processor includes a plurality of ECCs having different error restoration rates with each other, and a plurality of memories is coupled to the plurality of ECCs, respectively, according to distances from the processor.