Abstract: Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.

Abstract: Provided is a silicophosphate-based phosphor of Formula 1 and a light-emitting device including the same: [(Sr(1-x-y-a-b-c) BaaCabMgcEuxMny)4Si(PO4)4??(1) where 0<x?0.2, 0?y?0.2, 0?a?0.2, 0?b?0.5, and 0?c?0.5. The silicophosphate-based phosphor of Formula 1 is chemically and thermally stable and can be easily prepared. The phosphor exhibits a high luminous property when excited by a UV LED excitation light source having a wavelength of 360-420 nm, and emits light having a wavelength of 570 to 630 nm. Accordingly, the silicophosphate-based phosphor can be used in a LED, a lamp, a self-emission type liquid crystal display device, or the like. In particular, when a white LED includes the silicophosphate-based phosphor, the color rendering index of the white LED is high and thus an excellent color rendering property can be obtained.

Abstract: Provided is a red phosphor which is excellent in emission efficiency by a long wavelength UV excitation source and has a fine and uniform particle size. The red phosphor includes a compound represented by (Li.sub.(2?z)?xM.sub.x)(AO.sub.4).sub.y:Eu.sub.z,Sm.sub.q and a flux wherein M is K, Mg, Na, Ca, Sr, or Ba, A is Mo or W, 0.ltoreq.x.ltoreq.2, 0.5.ltoreq.y.ltoreq.5, 0.01.ltoreq.z.ltoreq.1.5, and 0.001.ltoreq.q.ltoreq.1.0. Provided is also a method of preparing the red phosphor.

Abstract: A light emitting device package is provided. The light emitting device package includes a light emitting device; a package body on which the light emitting device is loaded and which dissipates heat generated from the light emitting device to the outside; a first electrode formed in the package body in a single body; and a second electrode inserted into the package body.

Abstract: Provided is a method of manufacturing a vertical light emitting device.

Abstract: Provided is a semiconductor laser device, a semiconductor laser device package including the semiconductor laser device and methods of manufacturing the same. A semiconductor laser device may include a light emission structure including a first clad layer, an active layer and a second clad layer sequentially deposited on a substrate, a submount to which the light emission structure bonded, and a light shield plate in the submount, wherein the light shield plate blocks an end of the substrate on a light emission face of the light emission structure and blocks light leaked through the end of the substrate.

Abstract: Provided are a light emitting diode (LED) module and a method of manufacturing the same. The LED module may include a package housing including an inner space, a light-emitting chip in the inner space of the package housing, a phosphor layer including a fluorescent material and converting light emitted from the light-emitting chip to light having a longer wavelength than that of the light emitted from the light-emitting chip. The concentration of the fluorescent material of the phosphor layer may be inhomogeneous. The method of manufacturing the LED module may include providing or forming a package housing having an inner space and including a light-emitting chip in the inner space, measuring a radiation pattern of light emitted from the light-emitting chip, and forming a phosphor layer including a fluorescent material on the light-emitting chip and having characteristics that may be determined according to the radiation pattern.

Abstract: Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.

Abstract: Example embodiments may include a light emitting device package. The light emitting device package may include a light emitting device, a package body including a cavity having a bottom surface on which the light emitting device is mounted and a side surface for reflecting light emitted from the light emitting device, a first electrode protruding from the package body, and a second electrode coupled with the package body. The first and second electrodes may be designed to couple respectively with the second and first electrodes of another light emitting device package, thereby forming an array of light emitting device packages.

Abstract: A long life light-emitting diode (LED) module is provided. The LED module includes: a light-emitting chip; a phosphor layer formed of phosphor materials that transform light emitted from the light-emitting chip into light having a longer wavelength than the light emitted from the light-emitting chip; a capping layer that is formed on the light-emitting chip and protects the light-emitting chip; and a heat spreading plate that is disposed between the capping layer and the phosphor layer that dissipates heat generated in the light-emitting chip and the phosphor layer.

Abstract: A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.

Abstract: A light emitting diode unit for AC voltage is provided. The light emitting diode unit includes a sub-mount on which electric wires are formed; a first light emitting diode array in which a plurality of first light emitting diodes are serially connected to the sub-mount; and a second light emitting diode array, in which a plurality of second light emitting diodes are connected to the sub-mount as bridge circuits, connecting to the first light emitting diode array. Therefore, rectification can be performed through the bridge circuit without an additional rectifying device by connecting the light emitting diodes to the bridge circuit in series, and thus the structure of the unit can be simplified and a size of the light emitting diode unit can be reduced.

Abstract: A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer.

Abstract: Provided is a silicophosphate-based phosphor of Formula 1 and a light-emitting device including the same: [(Sr(1-x-y-a-b-c) BaaCabMgcEuxMny)4Si(PO4)4 ??(1) where 0<x?0.2, 0?y?0.2, 0<a?0.2, 0<b?0.5, and 0<c?0.5. The silicophosphate-based phosphor of Formula 1 is chemically and thermally stable and can be easily prepared. The phosphor exhibits a high luminous property when excited by a UV LED excitation light source having a wavelength of 360-420 nm, and emits light having a wavelength of 570 to 630 nm. Accordingly, the silicophosphate-based phosphor can be used in a LED, a lamp, a self-emission type liquid crystal display device, or the like. In particular, when a white LED includes the silicophosphate-based phosphor, the color rendering index of the white LED is high and thus an excellent color rendering property can be obtained.

Abstract: A light emitting device package is provided. The light emitting device package comprises a base substrate on which a wiring pattern is formed; a light emitting device mounted on the base substrate to emit light when supplied with driving power through the wiring pattern; a molded lens stably seated on the base substrate and having an inner space for sealing the light emitting device and reflective surfaces formed along outer sides facing the inner space to guide light from the light emitting device in an effective display direction; and a sealing resin between the inner space to bond the base substrate to the molded lens, whereby the packaging structure is simplified so that an assembly process and reliability testing are simplified, process losses due to defects are minimized, and the light extraction efficiency from the light emitting device and heat-dissipation performance are improved.

Abstract: A heat dissipating structure is flip-chip bonded to a light-emitting element and facilitates heat dissipation. The heat dissipating structure includes: a submount facing the light-emitting element and having at least one groove; a conductive material layer filled into at least a portion of the at least one groove; and a solder layer interposed between the light-emitting element and the submount for bonding. The heat dissipating structure and the light-emitting device having the same allow efficient dissipation of heat generated in the light-emitting element during operation.

Abstract: A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.

Abstract: A light emitting device package is provided. The light emitting device package includes a light emitting device; a package body on which the light emitting device is loaded and which dissipates heat generated from the light emitting device to the outside; a first electrode formed in the package body in a single body; and a second electrode inserted into the package body.

Abstract: A backlight unit for a liquid crystal display (LCD) using a light emitting diode (LED) is provided. The backlight unit includes a blue light source, a red light source, and a green light source. The green light source includes an ultraviolet (UV) LED and a green phosphor excited by light emitted from the UV LED.

Abstract: A flip-chip bonding structure of a light-emitting element is provided. The structure improves a heat emission efficiency by using a metal column having a high thermal conductivity instead of a solder bump. The structure includes a light-emitting element, a sub-mount, and a metal column. The metal column connects the light-emitting element with the sub-mount electrically and thermally.