Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z??<Formula 1> In Formula 1, A, B, x, y, and z are disclosed in the specification.

Abstract: A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

Abstract: An electronic system may include: a camera to capture a current image; an image processor to generate current image data items; and a splitter circuit to generate first and second images having respective first and second image data items. The splitter circuit splits each current image data item into a first image data item with a first set of bits and a second image data item with a second set of bits distinct from the first set of bits. The first and second image data items correspond to two distinct precisions less than a precision of the current image data items. The electronic system may also include distinct binary neural network circuits to independently process the first and second images to generate first and second processed image data items; and a merger circuit to combine the processed image data items to recover output image data items for display.

Abstract: A semiconductor device including a semiconductor substrate, an integrated circuit layer on the semiconductor substrate, first to nth metal wiring layers (where n is a positive integer) sequentially stacked on the semiconductor substrate and the integrated circuit layer, a first through via structure extending in a vertical direction toward the semiconductor substrate from a first via connection metal wiring layer, which is one of the second to nth metal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate, and a second through via structure being apart from the first through via structure, extending in a vertical direction toward the semiconductor substrate from a second via connection metal wiring layer, which is one of the second to nth metal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate may be provided.

Abstract: A semiconductor package includes first to fourth semiconductor chips sequentially stacked on one another. A backside of a third substrate of the third semiconductor chip may be arranged to face a backside surface of a second substrate of the second semiconductor chip such that the third substrate and a second backside insulation layer provided on the backside surface of the second substrate are bonded directly to each other, or the backside of the third substrate may be arranged to face a front surface of the second substrate such that the third substrate and a second front insulation layer provided on the front surface of the second substrate are bonded directly to each other.

Abstract: Navigation devices and methods of operation are provided. The navigation device includes a communication unit; a display; an input unit for receiving an input of data; a communication unit; and a controller for controlling operation of the display and the input unit. The controller connects to a data server through the communication unit, requests path setting information to the data server, receives the path setting information from the data server, acquires present position information of the navigation device, acquires a user moving path by reflecting the acquired position information and the received path setting information, and sets the user moving path as a guidance path. In this case, the path setting information is generated in another electronic device or the data server based on user input information input from the another electronic device.

Abstract: A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.

Abstract: A display device includes: a display panel in which a non-display region and a display region surrounding the non-display region are defined, wherein the display panel includes: a base layer comprising a first region in which a hole is defined corresponding to the non-display region, a second region surrounding the first region, and a third region corresponding to the display region; and first signal line parts disposed on the second region and the third region, the first signal line parts arrayed spaced apart from each other in a first direction, and each of the first signal line parts includes: a first line; a second line spaced apart from the first line; and a first connection part configured to connect the first line and the second line.

Abstract: A resist compound is represented by Formula 1: wherein R1 is an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms, and A bonded to R1 is O or NR2, wherein R2 is hydrogen, an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms. A resist composition includes the resist compound and an organic solvent. A method for forming a resist pattern includes forming a resist layer by applying the resist composition including the resist compound on a substrate, irradiating light onto the resist layer to provide an irradiated resist layer, and developing the irradiated resist layer to form a resist pattern.

Abstract: A display apparatus includes a first pad at one side of a substrate; a first semiconductor layer on the substrate; a first crack detection electrode interposed between the substrate and the first semiconductor layer, and including a first end portion at the one side and a second end portion at another side; a second crack detection electrode disposed on the first semiconductor layer, and including a first end portion located at the one side and a second end portion connected to the second end portion of the first crack detection electrode; and a first auxiliary electrode disposed on the second conductive layer, and including a first end portion connected to the second end portion of the first crack detection electrode and a second end portion electrically connected to the first pad.

Abstract: A bonding method for bonding a first substrate to a second substrate includes fixing the first substrate to a first surface of a first bonding chuck and fixing the second substrate to a second surface of a second bonding chuck, the second surface facing the first surface; aligning the second bonding chuck above the first bonding chuck in a vertical direction or in a horizontal direction; bonding the first substrate to the second substrate to make a bonded substrate; and wherein, in the bonding the first substrate to the second substrate, injecting a process gas between the first substrate and the second substrate using a process gas injector surrounding at least one selected from the first bonding chuck and the second bonding chuck in a plan view and injecting an air curtain forming gas to form an air curtain surrounding the first substrate and the second substrate using an air curtain generator are performed in combination.

Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.

Abstract: Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by RAMBOC where R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3<B/A<1.7, and 9.0?C<10.0.

Abstract: An organometallic compound represented by Formula 1: M1(L1)n1(L2)n2??Formula 1 wherein, M1 is a transition metal, L1 is a ligand represented by Formula 1A, L2 is a ligand represented by Formula 1B, and n1 and n2 are each independently 1 or 2, wherein ring CY1, ring CY2, ring CY4, R1, R2, R4, R31, R32, X1 to X4, Y1, Z1, Z2, a1, a2, b1, b2, b31, b32, and b4 in Formulae 1A and 1B are respectively as described herein, and * and *? each indicate a binding site to M1.

Abstract: Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. A2Bn?3CnO3n+1??<Formula 1> wherein, in Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.

Abstract: A semiconductor device including a semiconductor substrate, an integrated circuit layer on the semiconductor substrate, first to nth metal wiring layers (where n is a positive integer) sequentially stacked on the semiconductor substrate and the integrated circuit layer, a first through via structure extending in a vertical direction toward the semiconductor substrate from a first via connection metal wiring layer, which is one of the second to nth metal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate, and a second through via structure being apart from the first through via structure, extending in a vertical direction toward the semiconductor substrate from a second via connection metal wiring layer, which is one of the second to nth metal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate may be provided.

Abstract: Provided are a light-emitting device and an electronic apparatus including the light-emitting device, the light-emitting device including: a first electrode; a second electrode; an emission layer arranged between the first electrode and the second electrode; and a buffer layer arranged between the first electrode and the emission layer, wherein the buffer layer is in direct contact with the emission layer, the emission layer includes a first compound represented by Formula 1, and the buffer layer includes a second compound represented by Formula 5. The first compound and the second compound are respectively the same as those described in the present specification.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an activation layer located between the first electrode and the second electrode and includes an emission layer and an auxiliary layer, wherein the auxiliary layer is located between the first electrode and the emission layer and includes a block copolymer, the block copolymer includes at least one hydrophilic block and at least one hydrophobic block, and the emission layer includes a perovskite structure.

Abstract: A thin film includes a luminescent compound represented by Formula 1 and a random copolymer, wherein the random copolymer includes a first repeating unit including at least one aromatic ring, and a second repeating unit including a heteroatom including at least one lone pair of electrons, [A]n[Q]m[X]l??Formula 1 wherein, in Formula 1, A is a monovalent organic cation, a monovalent inorganic cation, or a combination thereof, Q is a divalent metal cation, a divalent metalloid cation, or a combination thereof, X is at least one monovalent halogen ion, n is an integer from 1 to 3, m is an integer from 1 to 2, and l is an integer from 1 to 5.