Abstract: A thin-film transistor including: a gate electrode; a gate insulating layer that is in contact with the gate electrode; a semiconductor layer insulated from the gate electrode by the gate insulating layer; and a source electrode and a drain electrode that are in contact with the semiconductor layer, wherein the semiconductor layer includes a perovskite compound represented by Formula 1: [A]2[B][X]6:Z??Formula 1 wherein, in Formula 1, A includes a monovalent organic-cation, a monovalent inorganic-cation, or a combination thereof, B includes Sn4+, X includes a monovalent anion, and Z includes a metal cation or a metalloid cation.

Abstract: A method of implementing a neural network in a neuromorphic apparatus having a memory and processing circuitry, where the method includes dividing, by the processing circuitry, the neural network into a plurality of sub-networks based on a size of a core of the memory to implement the neural network, initializing, by the processing circuitry, a hyper-parameter used in the sub-networks, and training, by the processing circuitry, the sub-networks by using the hyper-parameter.

Abstract: An organometallic compound represented by Formula 1: M1(Ln1)n1(Ln2)n2 wherein, in Formula 1, M1 is a transition metal; Ln1 is a ligand represented by Formula 1A; Ln2 is a ligand represented by Formula 1B; n1 is 1 or 2; and n2 is 1 or 2, wherein X1 is C or N, X2 is C or N, Y2 is O or S, and the other substituents are as described in the detailed description.

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

Abstract: Disclosed are a high-dielectric and method of manufacturing the same, a target material used for manufacturing the high-dielectric, an electronic device including the high-dielectric, and an electronic apparatus including the electronic device. The high-dielectric includes a first material including oxygen and at least two components, and a second material different from the first materials. The first material is a dielectric having a dielectric constant greater than a dielectric constant of silicon oxide, and the second material is an element for reducing a crystallization temperature of the first material. The content of the second material with respect to the first material may be within a range that does not deteriorate leakage current characteristics of the first material. The content of the second material may be in a range of about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %.

Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.

Abstract: A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrxTiyO3 in which a content of Ti is greater than a content of Sr.

Abstract: A transistor includes a semiconductor layer on a substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a second material doped to a first material. The first material includes a compound expressed as XYa of a Chemical Formula. X is one of Mo, W, Zr, or Re, Y is one of S, Se, or Te, and a is a natural number that is equal to or greater than 1. The second material includes at least one of W, Hf, Ta, Ti, Pt, Ni, Ga, or Zr. The second material includes an element that is different from the first material.

Abstract: Disclosed is a neural network accelerator including a first bit operator generating a first multiplication result by performing multiplication on first feature bits of input feature data and first weight bits of weight data, a second bit operator generating a second multiplication result by performing multiplication on second feature bits of the input feature data and second weight bits of the weight data, an adder generating an addition result by performing addition based on the first multiplication result and the second multiplication result, a shifter shifting a number of digits of the addition result depending on a shift value to generate a shifted addition result, and an accumulator generating output feature data based on the shifted addition result.

Abstract: An organometallic compound, represented by Formula 1: M1(Ln1)n1(Ln2)n2??Formula 1 wherein, in Formula 1, Ln1 is a ligand represented by Formula 1A, Ln2 is a ligand represented by Formula 1B, n1 is 1 or 2, and n2 is 1 or 2: wherein X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, Y9, Y10, CY1, CY2, CY3, T1, T2, a1, a2, R10, R20, R30, b10, b20, and b30 are each as described herein.

Abstract: Navigation devices and methods of operation are provided. The navigation device includes a communication unit; a display; an input unit for receiving an input of data; a communication unit; and a controller for controlling operation of the display and the input unit. The controller connects to a data server through the communication unit, requests path setting information to the data server, receives the path setting information from the data server, acquires present position information of the navigation device, acquires a user moving path by reflecting the acquired position information and the received path setting information, and sets the user moving path as a guidance path. In this case, the path setting information is generated in another electronic device or the data server based on user input information input from the another electronic device.

Abstract: An organometallic compound, represented by Formula 1: M1(Ln1)n1(Ln2)n2??Formula 1 wherein, in Formula 1, M1 is a transition metal, Ln1 is a ligand represented by Formula 1A, Ln2 is a ligand represented by Formula 1B, n1 is 1 or 2, and n2 is 1 or 2: wherein the substituents of Formulae 1A and 1B are as provided herein in the detailed description.

Abstract: A composition including a first compound and a second compound, wherein the first compound is an organometallic compound represented by Formula 1, the second compound is an organometallic compound represented by Formula 2, the first compound and the second compound are different from each other, the first compound and the second compound are each not tris[2-phenylpyridine]iridium, and |?P(Ir1)-?P(Ir2)| is in a range of 0 nm to about 30 nm, and at least one of Expressions 1 to 4 presented in the specification is satisfied, Ir(L11)n11(L12)n12(L13)n13??Formula 1 Ir(L21)n21(L22)n22(L23)n23??Formula 2 wherein L11 to L13, L21 to L23, n11 to n13, and n21 to n23 are as provided herein.

Abstract: A display apparatus includes: an organic light emitting diode (OLED) structure including in which at least one blue light-emitting unit and at least one green light-emitting unit are stacked to provide incident light in which the blue incident light and the green incident light are mixed; a first pixel, a second pixel, and a third pixel disposed on the OLED structure; color conversion layers disposed on at least two of the first, the second, or the third pixels, and including quantum dots for converting the mixed incident from the OLED structure into light of a predetermined color; and first, second, and third color filters disposed on the first, the second, and the third pixels, respectively, to absorb or block light of a predetermined wavelength band, wherein a conversion value of an area of a spectrum in a wavelength region of 380 nanometers to 780 nanometers of the green incident light with respect to a difference between a wavelength at the maximum transmittance of the second color filter and the medial

Abstract: Provided are a light-emitting device and an electronic apparatus including the same.

Abstract: Provided are a light-emitting device and an electronic apparatus including the same, the light-emitting device including: a first electrode; a second electrode facing the first electrode; and an emission layer between the first electrode and the second electrode.

Abstract: Provided are a light-emitting device and an electronic apparatus including the light-emitting device. The light-emitting device may include: an emission layer between a first electrode and a second electrode. The emission layer may include i) a first emission layer and ii) a second emission layer between the first emission layer and the second electrode, the first emission layer may be in direct contact with the second emission layer, the first emission layer may include a first dopant, a first hole-transporting compound, and a first electron-transporting compound, the second emission layer may include a second dopant, a second hole-transporting compound, and a second electron-transporting compound, the first dopant may be identical to the second dopant, and the first electron-transporting compound may be different from the second electron-transporting compound, electron mobility of the second electron-transporting compound may be greater than electron mobility of the first electron-transporting compound.

Abstract: A composition including a first compound represented by Formula 1 and a second compound represented by Formula 2: wherein in Formula 1, M1 is Pt, Pd, or Au, in Formula 2, M2 is Ir, L11 is a ligand represented by Formula 2-1, L12 is a ligand represented by Formula 2-2, L13 is a ligand represented by Formula 2-1 or 2-2, L11 and L12 are different from each other, n11, n12, and n13 are each independently 0, 1, 2, or 3, and a sum of n11+n12+n13 is equal to 3, and wherein the remaining substituent groups are each understood by referring to the detailed description provided herein.

Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.