Abstract: Navigation devices and methods of operation are provided. The navigation device includes a communication unit; a display; an input unit for receiving an input of data; a communication unit; and a controller for controlling operation of the display and the input unit. The controller connects to a data server through the communication unit, requests path setting information to the data server, receives the path setting information from the data server, acquires present position information of the navigation device, acquires a user moving path by reflecting the acquired position information and the received path setting information, and sets the user moving path as a guidance path. In this case, the path setting information is generated in another electronic device or the data server based on user input information input from the another electronic device.

Abstract: An organometallic compound represented by Formula 1: M1(Ln1)n1(Ln2)n2 ??Formula 1 wherein, Ln1 is a ligand represented by Formula 1A, Ln2 is a ligand represented by Formula 1B: wherein, in Formulae 1, 1A, and 1B, M1 is a transition metal, Ln1 is a ligand represented by Formula 1A, Ln2 is a ligand represented by Formula 1B, n1 is 0, 1, or 2, n2 is 1, 2, or 3, a1 is 0, 1, 2, or 3, k1 is 1, 2, 3, 4, 5, 6, 7, or 8, b10 and b20 are each independently 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10, and * and *? each represents a binding site to M1, and wherein CY1, CY2, X1, X2, Y1 to Y10, L1, Ar1, R1, R2, R10, and R20 are as provided herein.

Abstract: Provided are an organometallic compound, an organic light-emitting device including the organometallic compound, and an electronic apparatus including the organic light-emitting device, in which the organometallic compound may be represented by Formula 1-1: wherein Formula 1-1 may be understood by referring to the description of Formula 1-1 provided herein.

Abstract: A display apparatus includes: an organic light emitting diode (OLED) structure including in which at least one blue light-emitting unit and at least one green light-emitting unit are stacked to provide incident light in which the blue incident light and the green incident light are mixed; a first pixel, a second pixel, and a third pixel disposed on the OLED structure; color conversion layers disposed on at least two of the first, the second, or the third pixels, and including quantum dots for converting the mixed incident from the OLED structure into light of a predetermined color; and first, second, and third color filters disposed on the first, the second, and the third pixels, respectively, to absorb or block light of a predetermined wavelength band, wherein a conversion value of an area of a spectrum in a wavelength region of 380 nanometers to 780 nanometers of the green incident light with respect to a difference between a wavelength at the maximum transmittance of the second color filter and the medial

Abstract: An organometallic compound represented by Formula 1: M1(Ln1)n1(Ln2)3-n1??Formula 1 wherein M1 is a first-row transition metal of the Periodic Table of Elements, a second-row transition metal of the Periodic Table of Elements, or a third-row transition metal of the Periodic Table of Elements, Ln1 is a bidentate ligand, n1 is 0, 1, or 2, and Ln2 is a ligand represented by Formula 1A: wherein A1, A2, Y1, Y2, R1 to R3, R10, R20, b10, and b20 are as provided herein, and * and *? each indicate a binding site to a neighboring atom.

Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z ??<Formula 1> In Formula 1, A, B, x, y, and z are disclosed in the specification.

Abstract: A display device includes a first transistor including a first transistor including a light blocking pattern on a substrate, an active pattern on the light blocking pattern, and a gate electrode on the active pattern, a second transistor configured to provide a data voltage to the first transistor in response to a gate signal, and a storage capacitor electrically connected to the gate electrode and the light blocking pattern, and including a first conductive pattern in a same layer as the light blocking pattern, a second conductive pattern on the first conductive pattern and overlapping the first conductive pattern, a third conductive pattern in a same layer as the gate electrode, overlapping the second conductive pattern, and electrically connected to the first conductive pattern, and a fourth conductive pattern on the third conductive pattern, overlapping the third conductive pattern, and electrically connected to the second conductive pattern.

Abstract: Provided are an organometallic compound represented by Formula 1 and an organic light-emitting device including the same: M1(Ln1)n1(Ln2)3-n1??Formula 1 wherein, in Formula 1, Ln2 is a ligand represented by Formula 1A, and other substituents are the same as described in the detailed description of the present specification:

Abstract: Provided are a weight matrix circuit and a weight matrix input circuit. The weight matrix circuit includes a memory array including n input lines, m output lines, and n×m resistive memory devices each connected to the n input lines and the m output lines and each having a non-linear current-voltage characteristic, an input circuit connected to each of the input lines, and an output circuit connected to each of the output lines. The input circuit is connected to the resistive memory devices such that the weight matrix circuit has a linear current-voltage characteristic.

Abstract: An electronic apparatus includes a first transistor including a first oxide semiconductor pattern, a second transistor including a second oxide semiconductor pattern, a blocking layer including a conductive material, a signal line including a first line and a second line which are disposed on different layers, and a bridge pattern electrically connected to each of the first transistor, the first line of the signal line, and the second line of the signal line, wherein the first line of the signal line and the blocking layer are disposed on a same layer, and the second line of the signal line and the first oxide semiconductor pattern are disposed on a same layer.

Abstract: A method may be used for manufacturing a semiconductor element. The method may include the following steps: preparing a substrate; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes crystallized two-dimensional layers; forming a source electrode and a drain electrode on the semiconductor layer; forming an semiconductor member by wet etching the semiconductor layer using sodium hypochlorite as an etchant, wherein the wet etching results in a residue; and removing the residue using purified water and an inert gas.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an activation layer located between the first electrode and the second electrode and includes an emission layer and an auxiliary layer, wherein the auxiliary layer is located between the first electrode and the emission layer and includes a block copolymer, the block copolymer includes at least one hydrophilic block and at least one hydrophobic block, and the emission layer includes a perovskite structure.

Abstract: A thin film includes a luminescent compound represented by Formula 1 and a random copolymer, wherein the random copolymer includes a first repeating unit including at least one aromatic ring, and a second repeating unit including a heteroatom including at least one lone pair of electrons, [A]n[Q]m[X]l??Formula 1 wherein, in Formula 1, A is a monovalent organic cation, a monovalent inorganic cation, or a combination thereof, Q is a divalent metal cation, a divalent metalloid cation, or a combination thereof, X is at least one monovalent halogen ion, n is an integer from 1 to 3, m is an integer from 1 to 2, and l is an integer from 1 to 5.

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

Abstract: Navigation devices and methods of operation are provided. The navigation device includes a communication unit; a display; an input unit for receiving an input of data; a communication unit; and a controller for controlling operation of the display and the input unit. The controller connects to a data server through the communication unit, requests path setting information to the data server, receives the path setting information from the data server, acquires present position information of the navigation device, acquires a user moving path by reflecting the acquired position information and the received path setting information, and sets the user moving path as a guidance path. In this case, the path setting information is generated in another electronic device or the data server based on user input information input from the another electronic device.

Abstract: Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about ?15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

Abstract: A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1 X2[A(n?1)MnO(3n+1)]??Chemical Formula 1 wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n?1.

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.