Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z??<Formula 1> In Formula 1, A, B, x, y, and z are disclosed in the specification.

Abstract: A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

Abstract: An electronic system may include: a camera to capture a current image; an image processor to generate current image data items; and a splitter circuit to generate first and second images having respective first and second image data items. The splitter circuit splits each current image data item into a first image data item with a first set of bits and a second image data item with a second set of bits distinct from the first set of bits. The first and second image data items correspond to two distinct precisions less than a precision of the current image data items. The electronic system may also include distinct binary neural network circuits to independently process the first and second images to generate first and second processed image data items; and a merger circuit to combine the processed image data items to recover output image data items for display.

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

Abstract: A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.

Abstract: Navigation devices and methods of operation are provided. The navigation device includes a communication unit; a display; an input unit for receiving an input of data; a communication unit; and a controller for controlling operation of the display and the input unit. The controller connects to a data server through the communication unit, requests path setting information to the data server, receives the path setting information from the data server, acquires present position information of the navigation device, acquires a user moving path by reflecting the acquired position information and the received path setting information, and sets the user moving path as a guidance path. In this case, the path setting information is generated in another electronic device or the data server based on user input information input from the another electronic device.

Abstract: Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by RAMBOC where R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3<B/A<1.7, and 9.0?C<10.0.

Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.

Abstract: An organometallic compound represented by Formula 1: M1(L1)n1(L2)n2??Formula 1 wherein, M1 is a transition metal, L1 is a ligand represented by Formula 1A, L2 is a ligand represented by Formula 1B, and n1 and n2 are each independently 1 or 2, wherein ring CY1, ring CY2, ring CY4, R1, R2, R4, R31, R32, X1 to X4, Y1, Z1, Z2, a1, a2, b1, b2, b31, b32, and b4 in Formulae 1A and 1B are respectively as described herein, and * and *? each indicate a binding site to M1.

Abstract: Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. A2Bn?3CnO3n+1??<Formula 1> wherein, in Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.

Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.

Abstract: Provided is a display device including a voltage line, a passivation layer disposed on the voltage line and having an undercut shape, a first connecting electrode disposed inside the undercut shape, a second connecting electrode electrically connecting the voltage line and the first connecting line, and a common electrode electrically connected to the voltage line through at least one of the first connecting electrode and the second connecting electrode.

Abstract: Provided are a light-emitting device and an electronic apparatus including the light-emitting device, the light-emitting device including: a first electrode; a second electrode; an emission layer arranged between the first electrode and the second electrode; and a buffer layer arranged between the first electrode and the emission layer, wherein the buffer layer is in direct contact with the emission layer, the emission layer includes a first compound represented by Formula 1, and the buffer layer includes a second compound represented by Formula 5. The first compound and the second compound are respectively the same as those described in the present specification.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an activation layer located between the first electrode and the second electrode and includes an emission layer and an auxiliary layer, wherein the auxiliary layer is located between the first electrode and the emission layer and includes a block copolymer, the block copolymer includes at least one hydrophilic block and at least one hydrophobic block, and the emission layer includes a perovskite structure.

Abstract: A thin film includes a luminescent compound represented by Formula 1 and a random copolymer, wherein the random copolymer includes a first repeating unit including at least one aromatic ring, and a second repeating unit including a heteroatom including at least one lone pair of electrons, [A]n[Q]m[X]l??Formula 1 wherein, in Formula 1, A is a monovalent organic cation, a monovalent inorganic cation, or a combination thereof, Q is a divalent metal cation, a divalent metalloid cation, or a combination thereof, X is at least one monovalent halogen ion, n is an integer from 1 to 3, m is an integer from 1 to 2, and l is an integer from 1 to 5.

Abstract: Disclosed are a first memory cell, a second memory cell, and a summing circuit. The first memory cell outputs only one of a first voltage through a first bit line and a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs only one of a third voltage through the first bit line and a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight; and the summing circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.

Abstract: A method of forming a semiconductor device includes forming a first electrode on a single-crystal structure. A dielectric layer is formed on the first electrode. A second electrode is formed on the dielectric layer. The forming a dielectric layer includes forming a first dielectric layer having a single-crystal perovskite structure on the first electrode, and forming a second dielectric layer on the first dielectric layer. An upper surface of the first dielectric layer adjacent to the second dielectric layer has a greater surface roughness than an upper surface of the second dielectric layer adjacent to the second electrode.

Abstract: Navigation devices and methods of operation are provided. The navigation device includes a communication unit; a display; an input unit for receiving an input of data; a communication unit; and a controller for controlling operation of the display and the input unit. The controller connects to a data server through the communication unit, requests path setting information to the data server, receives the path setting information from the data server, acquires present position information of the navigation device, acquires a user moving path by reflecting the acquired position information and the received path setting information, and sets the user moving path as a guidance path. In this case, the path setting information is generated in another electronic device or the data server based on user input information input from the another electronic device.

Abstract: A method includes generating first and second series of segmentation masks for a first and second series of images in a video, respectively. The first series of segmentation masks are generated by using a machine-learning model to (1) generate a first segmentation mask based on a first image in the first series of images and a predetermined fixed segmentation mask, and (2) generate a second segmentation mask based on a second image in the first series of images and the first segmentation mask. The second series of segmentation masks are generated by using the machine-learning model to (1) generate a third segmentation mask based on a third image in the second series of images and the predetermined fixed segmentation mask, and (2) generate a fourth segmentation mask based on a fourth image in the second series of images and the third segmentation mask.

Abstract: A light-emitting device and an electronic apparatus including the same are disclosed. The light-emitting device, includes: a first electrode; a second electrode facing the first electrode; and an interlayer arranged between the first electrode and the second electrode, wherein the interlayer includes a first emission layer and a second emission layer, the first emission layer includes a first compound that emits a first light having a first spectrum, the second emission layer includes a second compound that emits a second light having a second spectrum, the first compound includes a first transition metal, the second compound includes a second transition metal, the first transition metal and the second transition metal are different from each other, |HOMO(1)?HOMO(2)| is about 0.05 eV to about 0.4 eV, and |?max(1)??max(2)| is about 0 nm to about 30 nm, wherein HOMO(1), HOMO(2), ?max(1), and ?max(2) are as described herein.