Abstract: The present invention provides a method of forming a titanium silicon nitride barrier layer on a semiconductor wafer, comprising the steps of depositing a titanium nitride layer on the semiconductor wafer; plasma-treating the titanium nitride layer in a N2/H2 plasma; and exposing the plasma-treated titanium nitride layer to a silane ambient, wherein silicon is incorporated into the titanium nitride layer as silicon nitride thereby forming a titanium silicon nitride barrier layer. Additionally, there is provided a method of improving the barrier performance of a titanium nitride layer comprising the step of introducing silicon into the titanium nitride layer such that the silicon is incorporated into the titanium nitride layer as silicon nitride. Also provided is a method of integrating copper into a semiconductor device and a method of improving copper wettability at a copper/titanium nitride interface in a semiconductor device.

Abstract: The present invention provides a method of forming a titanium silicon nitride barrier layer on a semiconductor wafer, comprising the steps of depositing a titanium nitride layer on the semiconductor wafer; plasma-treating the titanium nitride layer in a N2/H2 plasma; and exposing the plasma-treated titanium nitride layer to a silane ambient, wherein silicon is incorporated into the titanium nitride layer as silicon nitride thereby forming a titanium silicon nitride barrier layer. Additionally, there is provided a method of improving the barrier performance of a titanium nitride layer comprising the step of introducing silicon into the titanium nitride layer such that the silicon is incorporated into the titanium nitride layer as silicon nitride. Also provided is a method of integrating copper into a semiconductor device and a method of improving copper wettability at a copper/titanium nitride interface in a semiconductor device.

Abstract: A method of forming a composite barrier layer structure for use in integrated circuits is disclosed. The composite barrier layer structure formed using both physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. The composite barrier layer structure comprises a CVD deposited layer formed on a PVD deposited layer. During the PVD process, the underlying surface of the substrate is treated, reducing the resistivity of the barrier layer structure formed thereon.

Abstract: A method of forming tungsten suicide (WSix) films is provided. The tungsten suicide (WSix) films are formed by reacting a tungsten source with a silicon source at a temperature greater than about 600° C. The as-deposited tungsten suicide (WSix) layer has a resistivity less than about 60 &mgr;&OHgr;-cm.

Abstract: A method of forming tungsten silicide (WSix) films is provided. The tungsten silicide (WSix) film is formed by reacting a tungsten source with a silicon source. After the tungsten silicide (WSix) film is formed, it is spike annealed to reduce the resistivity of the as-deposited film. The spike annealed tungsten silicide (WSix) layer has a resistivity less than about 60 &mgr;&OHgr;-cm.

Abstract: A method of forming tungsten films on oxide layers is disclosed. The tungsten films are formed on the oxide layers by treating the oxide using a silane based gas mixture followed by the thermal decomposition of a W(CO)6 precursor. After the W(CO)6 precursor is thermally decomposed, additional layer of tungsten may be optionally formed thereon from the thermal decomposition of tungsten hexafluoride (WF6).