Patents by Inventor I-Hsuan Peng

I-Hsuan Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10903198
    Abstract: A semiconductor package assembly and method for forming the same are provided. The semiconductor package assembly includes a first semiconductor die and a second semiconductor die disposed on a first surface of a substrate. The first semiconductor die includes a peripheral region having a second edge facing the first edge of the second semiconductor die and a third edge opposite to the second edge, a circuit region surrounded by the peripheral region, wherein the circuit region has a fourth edge adjacent to the second edge and a fifth edge adjacent to the third edge. A minimum distance between the second edge and the fourth edge is a first distance, a minimum distance between the third edge and the fifth edge is a second distance, and the first distance is different from the second distance.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: January 26, 2021
    Assignee: MEDIATEK INC
    Inventors: Chia-Cheng Chang, I-Hsuan Peng, Tzu-Hung Lin
  • Publication number: 20200365526
    Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate having a first surface and a second surface opposite thereto, wherein the substrate includes a wiring structure, and a first semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The package further includes a second semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are separated by a molding material. A first hole and a second hole are formed on the second surface of the substrate. Finally, a frame is disposed over the first surface of the substrate, wherein the frame surrounds the first semiconductor die and the second semiconductor die.
    Type: Application
    Filed: August 3, 2020
    Publication date: November 19, 2020
    Inventors: Tzu-Hung LIN, Chia-Cheng CHANG, I-Hsuan PENG, Nai-Wei LIU
  • Publication number: 20200365515
    Abstract: An electronic package configured to operate at Gigabit-per-second (Gbps) data rates is disclosed. The electronic package includes a package substrate of a rectangular shape. A chip package having a first high-speed interface circuit die is mounted on a top surface of the package substrate. The chip package is rotated relative to the package substrate above a vertical axis that is orthogonal to the top surface through about 45 degrees. The first high-speed interface circuit die includes a first Serializer/Deserializer (SerDes) circuit block.
    Type: Application
    Filed: April 12, 2020
    Publication date: November 19, 2020
    Inventors: Yao-Chun Su, Chih-Jung Hsu, Yi-Jou Lin, I-Hsuan Peng
  • Publication number: 20200365572
    Abstract: A semiconductor package including at least one functional die; at least one dummy die free of active circuit, wherein the dummy die comprises at least one metal-insulator-metal (MIM) capacitor; and a redistribution layer (RDL) structure interconnecting the MIM capacitor to the at least one functional die.
    Type: Application
    Filed: May 7, 2020
    Publication date: November 19, 2020
    Inventors: Yao-Chun Su, Chih-Ching Chen, I-Hsuan Peng, Yi-Jou Lin
  • Publication number: 20200303259
    Abstract: A method of forming a semiconductor device including a fin field effect transistor (FinFET), the method includes forming a first sacrificial layer over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is patterned, thereby forming an opening. A first liner layer is formed on the isolation insulating layer in a bottom of the opening and on at least side faces of the patterned first sacrificial layer. After the first liner layer is formed, forming a dielectric layer in the opening. After the dielectric layer is formed, removing the patterned first sacrificial layer, thereby forming a contact opening over the source/drain structure. A conductive layer is formed in the contact opening. The FinFET is an n-type FET, and the source/drain structure includes an epitaxial layer made of Si1-y-a-bGeaSnbM2y, wherein 0<a, 0<b, 0.01?(a+b)?0.1, 0.01?y?0.1, and M2 is P or As.
    Type: Application
    Filed: June 9, 2020
    Publication date: September 24, 2020
    Inventors: Yasutoshi OKUNO, Cheng-Yi PENG, Ziwei FANG, I-Ming CHANG, Akira MINEJI, Yu-Ming LIN, Meng-Hsuan HSIAO
  • Publication number: 20200303260
    Abstract: A method of forming a semiconductor device including a fin field effect transistor (FinFET) includes forming a first sacrificial layer over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is patterned, thereby forming an opening. A first liner layer is formed on the isolation insulating layer in a bottom of the opening and on at least side faces of the patterned first sacrificial layer. After the first liner layer is formed, forming a dielectric layer in the opening. After the dielectric layer is formed, removing the patterned first sacrificial layer, thereby forming a contact opening over the source/drain structure. A conductive layer is formed in the contact opening. The FinFET is an n-type FET, and the source/drain structure includes an epitaxial layer including Si1?x?yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, and 0.01?x?0.1, and 0.01?y?0.1.
    Type: Application
    Filed: June 9, 2020
    Publication date: September 24, 2020
    Inventors: Yasutoshi OKUNO, Cheng-Yi PENG, Ziwei FANG, I-Ming CHANG, Akira MINEJI, Yu-Ming LIN, Meng-Hsuan HSIAO
  • Patent number: 10784211
    Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate having a first surface and a second surface opposite thereto. The substrate includes a wiring structure. The semiconductor package structure also includes a first semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The semiconductor package structure further includes a second semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The first semiconductor die and the second semiconductor die are separated by a molding material. In addition, the semiconductor package structure includes a first hole and a second hole formed on the second surface of the substrate.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: September 22, 2020
    Assignee: MEDIATEK INC.
    Inventors: Tzu-Hung Lin, Chia-Cheng Chang, I-Hsuan Peng, Nai-Wei Liu
  • Patent number: 10692789
    Abstract: A semiconductor package structure is provided. The structure includes a first semiconductor die having a first surface and a second surface opposite thereto. A first molding compound surrounds the first semiconductor die. A first redistribution layer (RDL) structure is disposed on the second surface of the first semiconductor die and laterally extends on the first molding compound. A second semiconductor die is disposed on the first RDL structure and has a first surface and a second surface opposite thereto. A second molding compound surrounds the second semiconductor die. A first protective layer covers a sidewall of the first RDL structure and a sidewall of the first molding compound.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: June 23, 2020
    Assignee: MediaTek Inc.
    Inventors: Nai-Wei Liu, Tzu-Hung Lin, I-Hsuan Peng, Ching-Wen Hsiao, Wei-Che Huang
  • Patent number: 10685884
    Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a channel region and a source/drain region disposed adjacent to the channel region. The FET also includes a gate electrode disposed over the channel region. The FET is an n-type FET and the channel region is made of Si. The source/drain region includes an epitaxial layer including Si1-x-yM1xM2y, where M1 is one or more of Ge and Sn, and M2 is one or more of P and As, and 0.01?x?0.1.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: June 16, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yasutoshi Okuno, Cheng-Yi Peng, Ziwei Fang, I-Ming Chang, Akira Mineji, Yu-Ming Lin, Meng-Hsuan Hsiao
  • Publication number: 20200168572
    Abstract: The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package including a first redistribution layer (RDL) structure having a first surface and a second surface opposite to the first substrate. The first RDL structure includes a plurality of first conductive traces close to the first surface of the first RDL structure. An antenna pattern is disposed close to the second surface of the first RDL structure. A first semiconductor die is disposed on the first surface of the first RDL structure and electrically coupled to the first RDL structure. A plurality of conductive structures is disposed on the first surface of the first RDL structure and electrically coupled to the first RDL structure. The plurality of conductive structures is spaced apart from the antenna pattern through the plurality of first conductive traces of the first RDL structure.
    Type: Application
    Filed: January 31, 2020
    Publication date: May 28, 2020
    Applicant: MediaTek Inc.
    Inventors: Tzu-Hung Lin, I-Hsuan Peng, Nai-Wei Liu, Wei-Che Huang, Che-Ya Chou
  • Publication number: 20200105684
    Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate, a semiconductor die and a frame. The semiconductor die is disposed over the substrate. The frame is disposed over the substrate, wherein the frame is adjacent to the semiconductor die, and the upper surface of the frame is lower than the upper surface of the semiconductor die.
    Type: Application
    Filed: December 3, 2019
    Publication date: April 2, 2020
    Inventors: Chia-Cheng CHANG, Tzu-Hung LIN, I-Hsuan PENG, Yi-Jou LIN
  • Publication number: 20200075572
    Abstract: A semiconductor package assembly and method for forming the same are provided. The semiconductor package assembly includes a first semiconductor die and a second semiconductor die disposed on a first surface of a substrate. The first semiconductor die includes a peripheral region having a second edge facing the first edge of the second semiconductor die and a third edge opposite to the second edge, a circuit region surrounded by the peripheral region, wherein the circuit region has a fourth edge adjacent to the second edge and a fifth edge adjacent to the third edge. A minimum distance between the second edge and the fourth edge is a first distance, a minimum distance between the third edge and the fifth edge is a second distance, and the first distance is different from the second distance.
    Type: Application
    Filed: November 5, 2019
    Publication date: March 5, 2020
    Inventors: Chia-Cheng CHANG, I-Hsuan PENG, Tzu-Hung LIN
  • Publication number: 20200006289
    Abstract: A semiconductor package structure includes a substrate having a first surface and second surface opposite thereto, a first semiconductor die disposed on the first surface of the substrate, a second semiconductor die disposed on the first surface, a molding material surrounding the first semiconductor die and the second semiconductor die, and an annular frame mounted on the first surface of the substrate. The first semiconductor die and the second semiconductor die are arranged in a side-by-side manner. The first semiconductor die is separated from the second semiconductor die by the molding material. The substrate includes a wiring structure. The first semiconductor die and the second semiconductor die are electrically coupled to the wiring structure. The annular frame surrounds the first semiconductor die and the second semiconductor die. The annular frame includes a retracted region at an outer corner of the annular frame.
    Type: Application
    Filed: September 8, 2019
    Publication date: January 2, 2020
    Inventors: Chia-Cheng Chang, Tzu-Hung Lin, I-Hsuan Peng, Yi-Jou Lin
  • Patent number: 10497689
    Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes a semiconductor die and a first memory die disposed on a first surface of a substrate, wherein the first memory die comprises a first edge facing the semiconductor die. The semiconductor die includes a peripheral region having a second edge facing the first edge of the first memory die and a third edge opposite to the second edge. The semiconductor die also includes a circuit region surrounded by the peripheral region, wherein the circuit region has a fourth edge adjacent to the second edge and a fifth edge adjacent to the third edge. A minimum distance between the second edge and the fourth edge is a first distance, a minimum distance between the third edge and the fifth edge is a second distance, and the first distance is different from the second distance.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: December 3, 2019
    Assignee: MEDIATEK INC.
    Inventors: Chia-Cheng Chang, I-Hsuan Peng, Tzu-Hung Lin
  • Patent number: 10483211
    Abstract: A semiconductor package structure including a first semiconductor package is provided. The first semiconductor package includes a first redistribution layer (RDL) structure having a first surface and a second surface opposite thereto. A first semiconductor die is disposed on and electrically coupled to the first surface of the first RDL structure. A first molding compound is disposed on the first surface of the first RDL structure and surrounds the first semiconductor die. A plurality of solder balls or conductive pillar structures is disposed in the first molding compound and electrically coupled to the first semiconductor die through the first RDL structure. A method for forming the semiconductor package is also provided.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: November 19, 2019
    Assignee: MediaTek Inc.
    Inventors: Tzu-Hung Lin, I-Hsuan Peng, Ching-Wen Hsiao, Nai-Wei Liu, Wei-Che Huang
  • Patent number: 10468341
    Abstract: A semiconductor package assembly includes a redistribution layer (RDL) structure, which RDL structure includes a conductive trace. A redistribution layer (RDL) contact pad is electrically coupled to the conductive trace, and the RDL contact pad is composed of a symmetrical portion and an extended wing portion connected to the symmetrical portion. The RDL structure includes a first region for a semiconductor die to be disposed thereon and a second region surrounding the first region, and the extended wing portion of the RDL contact pad is offset from a center of the first region.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: November 5, 2019
    Assignee: MEDIATEK INC.
    Inventors: Nai-Wei Liu, Tzu-Hung Lin, I-Hsuan Peng, Che-Hung Kuo, Che-Ya Chou, Wei-Che Huang
  • Patent number: 10424563
    Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes a semiconductor package. The semiconductor package includes a semiconductor die. A redistribution layer (RDL) structure is disposed on the semiconductor die and is electrically connected to the semiconductor die. An active or passive element is disposed between the semiconductor die and the RDL structure. A molding compound surrounds the semiconductor die and the active or passive element.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: September 24, 2019
    Assignee: MediaTek Inc.
    Inventors: Tzu-Hung Lin, I-Hsuan Peng, Ching-Wen Hsiao
  • Patent number: 10410969
    Abstract: The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package and a second semiconductor package overlying a portion of the first semiconductor package. The first semiconductor package includes a first redistribution layer (RDL) structure, a first semiconductor die and a molding compound. The first semiconductor die is disposed on a first surface of the first RDL structure and electrically coupled to the first RDL structure. The molding compound is positioned overlying the first semiconductor die and the first surface of the first RDL structure. The second semiconductor package includes a first memory die and a second memory die vertically stacked on the first memory die. The second memory die is electrically coupled to first memory die by through silicon via (TSV) interconnects formed passing through the second memory die.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: September 10, 2019
    Assignee: MEDIATEK INC.
    Inventors: Tzu-Hung Lin, Chia-Cheng Chang, I-Hsuan Peng
  • Publication number: 20190252351
    Abstract: A semiconductor package structure including a first semiconductor package is provided. The first semiconductor package includes a first semiconductor package including a first redistribution layer (RDL) structure having a first surface and a second surface opposite thereto. A first semiconductor die and a first molding compound that surrounds the first semiconductor die are disposed on the first surface of the first RDL structure. An IMD structure having a conductive layer with an antenna pattern or a conductive shielding layer is disposed on the first molding compound and the first semiconductor die.
    Type: Application
    Filed: February 19, 2019
    Publication date: August 15, 2019
    Applicant: MediaTek Inc.
    Inventors: Tzu-Hung Lin, I-Hsuan Peng, Nai-Wei Liu, Ching-Wen Hsiao, Wei-Che Huang
  • Publication number: 20190131233
    Abstract: A semiconductor package assembly includes a redistribution layer (RDL) structure, which RDL structure includes a conductive trace. A redistribution layer (RDL) contact pad is electrically coupled to the conductive trace, and the RDL contact pad is composed of a symmetrical portion and an extended wing portion connected to the symmetrical portion. The RDL structure includes a first region for a semiconductor die to be disposed thereon and a second region surrounding the first region, and the extended wing portion of the RDL contact pad is offset from a center of the first region.
    Type: Application
    Filed: December 26, 2018
    Publication date: May 2, 2019
    Inventors: Nai-Wei LIU, Tzu-Hung LIN, I-Hsuan PENG, Che-Hung KUO, Che-Ya CHOU, Wei-Che HUANG