Abstract: The present disclosure relates to a structure which includes a memory which is configured to enable zero test time built-in self-test (BIST) at a read/write port while concurrently performing at least one functional read operation at a read port.

Abstract: An adder includes a primary carry bit generation circuit and a summing circuit. The primary carry bit generation circuit is configured to generate first carry bits for a first number of pairs of bits from first and second operands, and to generate second carry bits for a second number of pairs of bits from the first and second operands. The second number of pairs being different than the first number of pairs. The summing circuit is configured to generate first sums by adding bits of pairs from the first and second number of pairs and the first and second carry bits. The summing circuit is configured to generate second sums by adding bits of other pairs of the bits from first and second operands than the pairs in the first and second number of pairs and additional carry bits generated when adding the bits of the other pairs.

Abstract: The present disclosure relates to a structure including a memory built-in self test (MBIST) circuit which is configured to repair a multi-cell failure for a plurality of patterns in a single wordline of a sliding window of a memory.

Abstract: The present disclosure relates to a structure including a sequential mode read controller which is configured to receive a sequential read enable burst signal and a starting word line address, identify consecutive read operations from an array of storage cells accessed via a plurality of word lines, precharge a plurality of bit lines of the storage cells no more than once during the consecutive read operations, and hold a word line of the word lines active throughout the consecutive read operations. The sequential read enable burst signal and a starting word line address are decoded to select a row address and activate the corresponding word line from a plurality of word lines in the array.

Abstract: A semiconductor device is disclosed that includes, among other things, a computing device including a plurality of transistors, an activity monitor to determine an activity metric associated with the plurality of transistors, and a power controller to, responsive to the activity metric indicating a first activity level, set a power supply voltage for the plurality of transistors to a first value, and responsive to the activity metric indicating a second activity level less than the first activity level, set the power supply voltage to a second value greater than the first value and apply a first reverse back bias voltage to the plurality of transistors to increase a threshold voltage of the plurality of transistors.

Abstract: The present disclosure relates to a device including a built-in-self-test (BIST) circuit configured to run a BIST pattern in a loop mode on a memory which is customized for activity factors corresponding to a programmable number of operations, the BIST circuit being further configured to measure dynamic power on a supply while running the BIST pattern in the loop mode on the memory.

Abstract: The present disclosure relates to a structure including a read controller configured to receive a burst enable signal and a word line pulse signal, identify consecutive read operations from storage cells accessed via a word line, precharge bit lines once during consecutive, sequential reads, and hold the word line active through N?1 of the consecutive read operations, and N is an integer number of the consecutive read operations.

Abstract: Disclosed is a parallel prefix adder structure with a carry bit generation circuit that generates primary carry bits for only some bit pairs and a sum circuit with ripple carry adders that use these primary carry bits to generate secondary carry bits and sum bits for a final sum. The carry bit generation circuit has different sections, which process different sequential sets of bit pairs and which have different sparsity configurations. As a result, generation of the primary carry bits is non-uniform. That is, in the different sections the primary carry bits are generated at different carry bit-to-bit pair ratios (e.g., the carry bit-to-bit pair ratios for the different sections can be 1:2, 1:4, and 1:2, respectively). For optimal performance, the specific bit pairs for which these primary carry bits are generated varies depending upon whether the maximum operand size is an odd number of bits or an even number.

Abstract: Disclosed is a parallel prefix adder structure with a carry bit generation circuit that generates primary carry bits for only some bit pairs and a sum circuit with ripple carry adders that use these primary carry bits to generate secondary carry bits and sum bits for a final sum. The carry bit generation circuit has different sections, which process different sequential sets of bit pairs and which have different sparsity configurations. As a result, generation of the primary carry bits is non-uniform. That is, in the different sections the primary carry bits are generated at different carry bit-to-bit pair ratios (e.g., the carry bit-to-bit pair ratios for the different sections can be 1:2, 1:4, and 1:2, respectively). For optimal performance, the specific bit pairs for which these primary carry bits are generated varies depending upon whether the maximum operand size is an odd number of bits or an even number.

Abstract: Ternary content addressable memory (TCAM) structures and methods of use are disclosed. The memory architecture includes one or more ternary content addressable memory (TCAM) fields, and control logic that applies progressively discriminating data-masking and scores a closeness of a match based on matched and mismatched bits.

Abstract: Systems and methods are provided for implementing customer-transparent logic redundancy in scan chains for improved yield of integrated circuits. More specifically, an integrated circuit structure is provided for that includes a plurality of combined latch structures. Each of the combined latch structures includes an original latch and a redundant latch. The integrated circuit structure further includes a plurality of combined logic structures. Each of the combined logic structures includes an original logic structure a redundant logic structure. Each redundant latch is a duplicate of each respective original latch within a combined latch structure and each redundant logic structure is a duplicate of each respective original logic structure within a combined logic structure such that a two-fold library of latches and logic is provided for one or more scan chains of the integrated circuit structure.

Abstract: Ternary content addressable memory (TCAM) structures and methods of use are disclosed. The memory architecture includes one or more ternary content addressable memory (TCAM) fields, and control logic that applies progressively discriminating data-masking and scores a closeness of a match based on matched and mismatched bits.

Abstract: Systems and methods are provided for implementing customer-transparent logic redundancy in scan chains for improved yield of integrated circuits. More specifically, an integrated circuit structure is provided for that includes a plurality of combined latch structures. Each of the combined latch structures includes an original latch and a redundant latch. The integrated circuit structure further includes a plurality of combined logic structures. Each of the combined logic structures includes an original logic structure a redundant logic structure. Each redundant latch is a duplicate of each respective original latch within a combined latch structure and each redundant logic structure is a duplicate of each respective original logic structure within a combined logic structure such that a two-fold library of latches and logic is provided for one or more scan chains of the integrated circuit structure.

Abstract: The present disclosure relates to a structure including a sequential mode read controller which is configured to receive a sequential read enable burst signal and a starting word line address, identify consecutive read operations from an array of storage cells accessed via a plurality of word lines, precharge a plurality of bit lines of the storage cells no more than once during the consecutive read operations, and hold a word line of the word lines active throughout the consecutive read operations. The sequential read enable burst signal and a starting word line address are decoded to select a row address and activate the corresponding word line from a plurality of word lines in the array.

Abstract: A scoped search engine is disclosed. The scoped search engine includes a memory unit storing reference data records. The scoped search engine also includes a data comparison unit that searches the reference data records using different searches. The scoped search engine further includes a match analysis unit that combines result data from the different searches and determines a scope for a subsequent search based on the combined result data.

Abstract: The present disclosure relates to a structure which includes a memory which is configured to enable zero test time built-in self-test (BIST) at a read/write port while concurrently performing at least one functional read operation at a read port.

Abstract: The present disclosure relates to a structure which includes a self-referenced multiplexer circuit which is configured to pre-charge a plurality of sense lines to a voltage threshold in a first time period and sense and detect a value of a selected sense line of the sense lines in a second time period.

Abstract: The present disclosure relates to a structure which includes a memory which is configured to enable zero test time built-in self-test (BIST) at a read/write port while concurrently performing at least one functional read operation at a read port.

Abstract: The present disclosure relates to a device including a built-in-self-test (BIST) circuit configured to run a BIST pattern in a loop mode on a memory which is customized for activity factors corresponding to a programmable number of operations, the BIST circuit being further configured to measure dynamic power on a supply while running the BIST pattern in the loop mode on the memory.

Abstract: Disclosed is a method wherein selective voltage binning and leakage power screening of integrated circuit (IC) chips are performed. Additionally, pre-test power-optimized bin reassignments are made on a chip-by-chip basis. Specifically, a leakage power measurement of an IC chip selected from a voltage bin can is compared to a bin-specific leakage power screen value of the next slower voltage bin. If the leakage power measurement is higher, the IC chip will be left in the voltage bin to which it is currently assigned. If the leakage power measurement is lower, the IC chip will be reassigned to that next slower voltage bin. These processes can be iteratively repeated until no slower voltage bins are available or the IC chip cannot be reassigned. IC chips can subsequently be tested according to testing parameters, including the minimum test voltages, associated with the voltage bins to which they are finally assigned.