Abstract: A railess variable seatback type rear seat includes: a linear movement device configured to convert a rotation of a motor into a linear movement; a sliding movement device configured to convert the linear movement into a sliding movement in which a seat cushion is pushed forward or backward; and a reclining angle change device configured to convert the sliding movement into a reclining movement, and to fold a seatback, which is connected to the seat cushion, forward or to recline the seatback backward.

Abstract: A cap and a method for forming the same are provided. An integrally formed outer layer of fabric and an integrally formed moldable layer are adhesively bonded together to form a moldable front panel. A curved front side of the front panel is then formed by a mold. After that, the front panel and a plurality of side panels are connected to form a crown, and a peak is subsequently connected to the front panel of the crown to form the cap. Once the curved front side of the front panel is formed by heating and pressure application through the mold, the integrally formed moldable layer keeps the front panel in shape, so there is no need to support the outer layer of fabric and curve the front panel with two pieces of buckram that are stitched together, as is conventionally required.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate having a front side and a back side opposite the front side. The semiconductor structure also includes a first contact metal layer disposed on the front side of the substrate. The semiconductor structure further includes a III-V compound semiconductor layer disposed between the substrate and the first contact metal layer. Moreover, the semiconductor structure includes a via hole penetrating through the substrate and the III-V compound semiconductor layer from the back side of the substrate. The bottom of the via hole is defined by the first contact metal layer, and the first contact metal layer includes molybdenum, tungsten, iridium, palladium, platinum, cobalt, ruthenium, osmium, rhodium, rhenium, or a combination thereof.

Abstract: A cap and a method for forming the same are provided. An integrally formed outer layer of fabric and an integrally formed moldable layer are adhesively bonded together to form a moldable panel. A curved edge of the moldable panel is then formed by a mold. After that, the moldable panel and at least one second panel are connected to form a crown, to which a peak is subsequently connected to form the cap. Once the curved edge of the moldable panel is formed by heating and pressure application through the mold, the integrally formed moldable layer keeps the moldable panel in shape, so there is no need to support the outer layer of fabric and curve, for example, the front panel with two pieces of buckram that are stitched together, as is conventionally required.

Abstract: A combination structure of a seat frame includes: a first and a second side cushion frames installed on a first and a second sides of a seat, and configured to slide forward and rearward, wherein the first and the second sides of the seat are opposite to each other; a center cushion frame provided between the side cushion frames and having a first side fixed to the first side cushion frame; and a support guide device connected between a second side of the center cushion frame and the second side cushion frame, and configured to guide a sliding movement of each of the second side cushion frame and the center cushion frame while supporting weights of the second side cushion frame and the center cushion frame.

Abstract: An apparatus for adjusting a seat of a vehicle includes a seat back frame, a cushion frame that is moved forward and backward by a motor driving unit, a cushion hinge part connecting the seat back frame and the cushion frame and rotating according to the movement of the cushion frame to adjust the angle of the seat back frame, and a seat back hinge part connecting the seat back frame and the vehicle body and rotating according to the movement of the seat back frame.

Abstract: The present disclosure relates to a reclining device for a seat, which can adjust a seatback at various angles through movement of a striker installed in a vehicle body. The reclining device for a seat includes a latch installed on a side of a seatback and configured to be rotated together with the seatback, and a striker module in which the latch is engaged with a striker installed in a vehicle body, where the striker moves in a certain section overlapping a rotation trajectory of the latch in a state where the latch is engaged and reclines the seatback together with the latch.

Abstract: A rear seat for a vehicle is provided, in which when the seat back is reclined. The angle of the seat cushion is adjusted by following the operation of the seat back to provide an optimal posture for fatigue reduction of a passenger. When the seat back is folded, the seat cushion is not operated.

Abstract: A gate-sinking pseudomorphic high electron mobility transistor comprises a compound semiconductor substrate overlaid with an epitaxial structure which includes sequentially a buffer layer, a channel layer, a Schottky layer, and a first cap layer. The Schottky layer comprises from bottom to top at least two stacked regions of semiconductor material. Each of the two adjacent stacked regions differs in material from the other and provides a stacked region contact interface therebetween. In any two adjacent stacked regions of the Schottky layer, one stacked region composed of AlGaAs-based semiconductor material alternates with the other stacked region composed of InGaP-based semiconductor material. A gate-sinking region is beneath the first gate metal layer of the gate electrode, and the bottom boundary of the gate-sinking region is located at the one of the at least one stacked region contact interface of the Schottky layer.

Abstract: A health monitoring device included in a large area display (LAD) with at least one display computers comprises a universal asynchronous receiver-transmitter (UART) configured to produce a test path by communicating with a processor of the display computer, a field programmable gate array (FPGA) configured to transmit a test signal to a terminal of the display computer and receive a test result, an ethernet unit configured to communicate with a test terminal connected with the LAD to transmit a monitoring signal to the test terminal, and a micro-controller configured to gather an operation state of the display computer and produce a measurement signal according to the test result.

Abstract: A fold and dive seat for a vehicle is provided with a seat-cushion tilting mechanism, a fold and dive mechanism, and a seatback reclining mechanism so as to simultaneously performed both a seatback reclining operation and a tilting operation of a front portion of a seat cushion. The fold and dive seat reduces by evenly dispersing a body pressure over a passenger's upper body and lower body.

Abstract: A rear seat for a vehicle is provided, in which when the seat back is reclined. The angle of the seat cushion is adjusted by following the operation of the seat back to provide an optimal posture for fatigue reduction of a passenger. When the seat back is folded, the seat cushion is not operated.

Abstract: A fold and dive seat for a vehicle that achieves a fatigue reduction posture is provided. The seat includes a tip up-extension mechanism that enables tipping-up and extension of the front end of a seat cushion and a seatback reclining mechanism for the fold and dive seat so that tipping-up for lifting the front end of the seat cushion and extension for extending the front end forward are performed simultaneously performed when the seatback reclining is performed.

Abstract: A gate-sinking pseudomorphic high electron mobility transistor comprises a compound semiconductor substrate overlaid with an epitaxial structure which includes sequentially a buffer layer, a channel layer, a Schottky layer, and a first cap layer. The Schottky layer comprises from bottom to top at least two stacked regions of semiconductor material. Each of the two adjacent stacked regions differs in material from the other and provides a stacked region contact interface therebetween. In any two adjacent stacked regions of the Schottky layer, one stacked region composed of AlGaAs-based semiconductor material alternates with the other stacked region composed of InGaP-based semiconductor material. A gate-sinking region is beneath the first gate metal layer of the gate electrode, and the bottom boundary of the gate-sinking region is located at the one of the at least one stacked region contact interface of the Schottky layer.

Abstract: A semiconductor integrated circuit comprises a semiconductor substrate having a via-hole, a front-side-metal layer formed on a top surface of the semiconductor substrate, a seed-metal layer and a backside-metal layer. A bottom surface of an inner surface of the via-hole is at least partially defined by the front-side-metal layer. A surrounding surface of the inner surface of the via-hole is at least partially defined by the semiconductor substrate. The seed-metal layer is formed on the inner surface of the via-hole and a bottom surface of the semiconductor substrate such that the seed-metal layer and the front-side-metal layer are connected. The backside-metal layer is formed on an outer surface of the seed-metal layer. An aspect ratio of the via-hole is greater than or equal to 0.2 and less than or equal to 3, thereby a thickness uniformity of the backside-metal layer is improved.

Abstract: A fold and dive seat for a vehicle that achieves a fatigue reduction posture is provided. The seat includes a tip up-extension mechanism that enable stipping-up and extension of the front end of a seat cushion and a seatback reclining mechanism for the fold and dive seat so that tipping-up for lifting the front end of the seat cushion and extension for extending the front end forward are performed simultaneously performed when the seatback reclining is performed.

Abstract: Provided herein are methods for assessing response to inflammatory disease therapy. The methods include performing immunoassays to generate scores based on quantitative data for expression of biomarkers relating to inflammatory biomarkers to assess disease activity in inflammatory diseases, e.g., rheumatoid arthritis. Also provided are methods of adjusting disease activity scores to account for variables that can influence such scores.

Abstract: A semiconductor device comprising a fingerprint sensor configured to generate first-direction sensing data and second-direction sensing data by sensing a fingerprint image in a first direction and a second direction, respectively, which is perpendicular to the first direction; a differential sensing circuit configured to generate first-direction first differential data and second-direction first differential data by performing a differential operation on the first-direction sensing data and the second-direction sensing data, respectively; and a fingerprint processing circuit configured to generate first-direction second differential data and second-direction second differential data by performing a differential operation on the first-direction first differential data and the second-direction first differential data, respectively, and generate fingerprint data by adding the first-direction second differential data and the second-direction second differential data.

Abstract: An ohmic metal for GaN device comprises a diffusion barrier seed metal layer and a plurality of metal layers. The diffusion barrier seed metal layer is formed on an epitaxial structure layer. The diffusion barrier seed metal layer is made of Pt. The epitaxial structure layer is made of AlGaN or GaN. The plurality of metal layers is formed on the diffusion barrier seed metal layer. The plurality of metal layers comprises a first metal layer and a second metal layer. The first metal layer is formed on the diffusion barrier seed metal layer. The first metal layer is made of Ti. The second metal layer is formed on the first metal layer. The second metal layer is made of Al. By the diffusion barrier seed metal layer, so as to suppress the diffusion of the plurality of metal layers into the epitaxial structure layer.

Abstract: The present invention relates to a transgenic pig in which an immune rejection response is suppressed during xenotransplantation, wherein a gene coding for heme oxygenase-1 (HO-1) and a gene coding for tumor necrosis factor receptor 1-Fc (TNFR1-Fc) are simultaneously expressed and a gene coding for ?-1,3-galactosyltransferase (GGTA1) is knocked out; and a method for producing the same.