Abstract: An air-cooling type chiller is provided. The chiller may include a plurality of fans, and an intermediate device provided between adjacent fans of the plurality of fans. When one of the fans is disabled, air is not drawn in through the disabled fan due to the intermediate device, but instead may pass through a condenser, thereby minimizing degradation in condensing efficiency. The intermediate device may be formed as an auxiliary condenser so that any air drawn in through a disabled fan passes through the auxiliary condenser, also minimizing impact on condensing efficiency.

Abstract: An electroless plating apparatus and method designed specifically for plating at least one semiconductor wafer are disclosed. The apparatus comprises a container, a wafer holder, an electrolyte supplying unit, and an ultrasonic-vibration unit. The container is provided with at least an inlet and used for containing electrolyte. The wafer holder is provided within the container. The electrolyte supplying unit is used to supply the electrolyte into the container via the inlet. The ultrasonic-vibration unit consisting of at least one frequency ultrasonic transducer is disposed in the container for producing a uniform flow of electrolyte in the container. Thereby, the wafers can be uniformly plated, especially for wafers with fine via-holes or trench structures.

Abstract: The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.

Abstract: An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

Abstract: An organic thin film transistor is disclosed, which comprises an azole-metal complex compound used as the gate insulating layer. The method of making the self-assembled gate insulating layer is a water-based processing method that enables the azole-metal complex compound to be self-formed on the patterned gate electrode in a water-based solution and serves as a gate insulating layer. The organic thin film transistor (OTFT) of the present invention comprises the azole-metal complex compound used in the gate insulating layer, therefore can be manufactured in a simple, quick, easy way for large quantities, and low cost.

Abstract: An organic thin film transistor (OTFT) and a metal-insulator-metal (MIM) capacitor using silk protein as a dielectric material, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate electrode; an organic semiconductor layer; and a source electrode and a drain electrode, wherein the organic semiconductor layer, the source electrode and the drain electrode are disposed over the gate insulating layer.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.

Abstract: The present invention relates to hydroxamate derivatives, isomers thereof, pharmaceutically acceptable salts thereof, hydrates thereof, or solvates thereof, the use thereof for preparing pharmaceutical compositions, pharmaceutical compositions containing the same, a method of treating disease using the compositions, and a method for preparing the hydroxamate derivatives.

Abstract: An electronic device and a protection cover thereof are provided. The electronic device includes a cap body, a main body, a flexible printed circuit board and a protection cover. The protection cover includes a receiving portion and a combining portion. The receiving portion has a first end and a second end, wherein the first end is coupled to an upper surface of the main body and the second end connects to the combining portion. As the cap body moves from a first position to a second position on the main body, the combining portion is coupled to a bottom surface of the cap body, so that when the cap body rotates in the second position, the protection cover moves along with the cap body and covers the flexible printed circuit board.

Abstract: The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.

Abstract: An organic thin film transistor (OTFT) using paper as a substrate and silk protein as an insulating material and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a paper substrate; a gate disposed on the paper substrate; a gate insulating layer containing silk protein, which is disposed on the paper substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.

Abstract: A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the LED unit may continuously emit light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply. Since each AC LED micro-die is operated forwardly, the structure of AC LED dies also provides protection from electrical static charge (ESD) and may operate under a high voltage.

Abstract: An electronic grade silk solution, an organic thin film transistor (OTFT) and a metal-insulator-metal capacitor with silk protein as the insulating material manufactured by use of the silk solution, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.

Abstract: A method for mounting a thinned semiconductor wafer on a carrier substrate for further processing is disclosed. The method consists of a series of steps, which is based on providing a frame with a double-side tape to mount the thinned wafer on the carrier substrate. The frame is used to support the double-side tape and can be designed to fit the conventional production line for holding, picking and transferring wafers. The carrier substrate can be a sapphire substrate, a quartz substrate or other substrates that can sustain further processing, such as thermal treatments and/or chemical etchings. The method of the present invention not only prevents possible damages to the highly brittle chip after wafer thinning, but also fits the conventional production line for processing semiconductor wafers.

Abstract: An organic thin film transistor (OTFT) and a metal-insulator-metal (MIM) capacitor using silk protein as a dielectric material, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate electrode; an organic semiconductor layer; and a source electrode and a drain electrode, wherein the organic semiconductor layer, the source electrode and the drain electrode are disposed over the gate insulating layer.

Abstract: A method of backside metal process for semiconductor electronic devices, particularly of using an electroless plating for depositing a metal seed layer for the plated backside metal film. The backside of a semiconductor wafer, with electronic devices already fabricated on the front side, is first coated with a thin metal seed layer by electroless plating. Then, the backside metal layer, such as a gold layer or a copper layer, is coated on the metal seed layer. The metal seed layer not only increases the adhesion between the front side metal layer and the backside metal layer through backside via holes, but also prevents metal peeling after subsequent fabrication processes. This is helpful for increasing the reliability of device performances. Suitable materials for the metal seed layer includes Pd, Au, Ni, Ag, Co, Cr, Cu, Pt, or their alloys, such as NiP, NiB, AuSn, Pt—Rh and the likes.

Abstract: A method of processing copper backside metal layer for semiconductor chips is disclosed. The backside of a semiconductor wafer, with electronic devices already fabricated on the front side, is first coated with a thin metal seed layer by either electroless plating or sputtering. Then, the copper backside metal layer is coated on the metal seed layer. The metal seed layer not only increases the adhesion between the front side metal layer and the copper backside metal layer through backside via holes, but also prevents metal peeling from semiconductor's substrate after subsequent fabrication processes, which is helpful for increasing the reliability of device performances. Suitable materials for the metal seed layer includes Pd, Au, Ni, Ag, Co, Cr, Pt, or their alloys, such as NiP, NiB, AuSn, Pt—Rh and the likes. The use of Pd as seed layer is particularly useful for the copper backside metal layer, because the Pd layer also acts as a diffusion barrier to prevent Cu atoms entering the semiconductor wafer.

Abstract: An LED package interface inspection apparatus for an LED device comprises a current source, a voltage measuring unit, and a testing control unit. The testing control unit provides at least one control signal to command the current source to output at least one current for the LED device. The testing control unit also provides at least two signals to command the voltage measuring unit to measure a first forward voltage of the LED device at a first time and a second forward voltage of the LED device at a second time. The testing control unit calculates a voltage difference between the first forward voltage and the second forward voltage, and determines that the LED device is defective if the voltage difference is larger than a predetermined threshold value.

Abstract: An air-cooling type chiller is provided. The chiller may include a plurality of fans, and an intermediate device provided between adjacent fans of the plurality of fans. When one of the fans is disabled, air is not drawn in through the disabled fan due to the intermediate device, but instead may pass through a condenser, thereby minimizing degradation in condensing efficiency. The intermediate device may be formed as an auxiliary condenser so that any air drawn in through a disabled fan passes through the auxiliary condenser, also minimizing impact on condensing efficiency.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.