Abstract: A method and apparatus for etching a magnetic memory cell stack are described. More particularly, HCl is used as a main etchant gas for etching a magnetic memory cell stack. HCl is used in part to reduce corrosion and improve selectivity. Additionally, use of an amorphous carbon or hydrocarbon based polymer resin for a hard mask is described, as well as a post-etch passivation with a water rinse, a water vapor plasma treatment or an ammonia plasma treatment.

Abstract: A low power mode and feedback arrangement for a switching power converter. Two or more main power switches, such as transistors, transfer energy from a supply to load by their opening and closing. When the load requires a relatively low power level, this condition is detected. In response, one or more of the transistor switches is disabled from switching and the reduced power requirements of the load are handled by the remaining one or more transistor switches. As a result, switching losses are reduced. This is because parasitic gate capacitance and on-resistance associated with the disabled switches no longer consume power from the power source. The invention provides significant efficiency advantages during periods when the load draws a low level of power. This is especially useful for battery-powered devices which may operate in a low power mode for extended periods of time, such as standby mode as in a portable telephone.

Abstract: Disclosed herein is a method of etching platinum using a silicon carbide mask. The method comprises providing an etch stack including a patterned silicon carbide layer overlying a layer of platinum, then pattern etching the platinum layer using a plasma generated from a source gas comprising Cl2, BCl3, and a nonreactive, diluent gas. The silicon carbide mask can be deposited and patterned using standard industry techniques, and can be easily removed without damaging either the platinum or an underlying doped substrate material. The method provides a smooth platinum etch profile and an etch profile angle of about 75° to about 90°. Also disclosed herein are methods of forming semiconductor structures useful in the preparation of DRAM and FeRAM cells.

Abstract: A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.3 &mgr;m and having a platinum profile equal to or greater than about 85°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising chlorine, argon and a gas selected from the group consisting of BCl3, HBr, and mixtures thereof. A semiconductor device having a substrate and a plurality of platinum electrodes supported by the substrate. The platinum electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 &mgr;m and a platinum profile equal to or greater than about 85°.

Abstract: A method of etching a metal or metal oxide, including a platinum family metal or a platinum family metal oxide. A wafer is first provided which comprises: (a) a semiconductor substrate, (b) a metal or metal oxide layer over the semiconductor substrate, and (c) a titanium containing patterned mask layer having one or more apertures formed therein positioned over the metal or metal oxide layer. The metal or metal oxide is then etched through the apertures in the mask layer by a plasma etching step that uses plasma source gases comprising the following: (a) a gas that comprises one or more carbon-oxygen bonds (for example, CO gas or CO2 gas) and (b) a gas that comprises one or more chlorine atoms (for example, Cl2 gas, carbon tetrachloride gas, silicon tetrachloride gas or boron trichloride gas).

Abstract: A low power mode and feedback arrangement for a switching power converter. Two or more main power switches, such as transistors, transfer energy from a supply to load by their opening and closing. When the load requires a relatively low power level, this condition is detected. In response, one or more of the transistor switches is disabled from switching and the reduced power requirements of the load are handled by the remaining one or more transistor switches. As a result, switching losses are reduced. This is because parasitic gate capacitance and on-resistance associated with the disabled switches no longer consume power from the power source. The invention provides significant efficiency advantages during periods when the load draws a low level of power. This is especially useful for battery-powered devices which may operate in a low power mode for extended periods of time, such as standby mode as in a portable telephone.

Abstract: A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 &mgr;m and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchants gas comprising a gas selected from the group consisting nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HBr, and SiCl4 mixtures thereof. A semiconductor device having a substrate and a plurality of noble metal electrodes supported by the substrate. The noble metal electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 &mgr;m and a platinum profile equal to or greater than about 85°.

Abstract: A power factor correction circuit arrangement. A rectified alternating-current (AC) input signal may be applied across inputs of a voltage converter circuit, such as a boost converter. Current drawn by the voltage converter may be sensed to form a first sensing signal that is representative of the current. The rectified input voltage may be converted to a second sensing signal that is representative of the AC input signal. Switching in the power converter is adjusted in a first feedback loop to equalize the first and second sensing signals and, thus, the current drawn is regulated to remain in phase with the AC input signal. A feedback signal adjusts switching so as to regulate the output voltage level of the voltage converter in a second feedback loop and, thus, controls power delivered to the load.

Abstract: Disclosed herein is a method of etching platinum using a silicon carbide mask. The method comprises providing an etch stack including a patterned silicon carbide layer overlying a layer of platinum, then pattern etching the platinum layer using a plasma generated from a source gas comprising Cl2, BCl3, and a nonreactive, diluent gas. The silicon carbide mask can be deposited and patterned using standard industry techniques, and can be easily removed without damaging either the platinum or an underlying doped substrate material. The method provides a smooth platinum etch profile and an etch profile angle of about 75° to about 90°. Also disclosed herein are methods of forming semiconductor structures useful in the preparation of DRAM and FeRAM cells.

Abstract: A current limiting technique for a voltage converter. A current through a reactive element in a voltage converter is limited. Current from a supply is switched through a reactive element in accordance with a switch control signal for forming a regulated output voltage in a feedback loop. A first signal that is representative of the input current is sensed. A voltage that is representative of the output voltage of the voltage converter is sensed. A second signal that is representative of a difference between the output voltage and a desired voltage is formed. A selected one of the first signal and the second signal is compared to a ramp signal for forming the switch control signal wherein the selected one of the first signal and the second signal is selected according to the relative magnitudes of the first and second signal.

Abstract: The infusion of unsaturated fatty acids in a solution essentially free of saturated fatty acids can effectively ameliorate the symptoms of sepsis, septic shock and other severe inflammatory diseases caused by the presence of compounds from bacteria, yeast and mycobacteria. Saturated fatty acids through activation of the Toll-receptors TLR4 and TLR2 induce the expression of proinflammatory cytokines, iNOS, and COX-2, important compounds in the cascading response leading to septic shock. In contrast, unsaturated fatty acids, including omega-3, omega-6, and omega-9 fatty acids, inhibit the expression of COX-2 stimulated by saturated fatty acids, with docosahexaenoic acid being the most effective inhibitor. These surprising results indicate that an effective treatment of sepsis or other severe inflammatory diseases is the infusion of polyunsaturated fatty acids that are essentially free of saturated fatty acids.

Abstract: An hydraulic brake system that rapidly and precisely slows or reduces speed by constraining or stopping the movement of a link mechanism connected between a piston and a rotational driving shaft of a power system with physical force generated due to the incompressible fluid characteristic by constraining or stopping the flow of oil filled in an hydraulic oil chamber. The hydraulic brake system includes a lubricating section for supplying the oil reserved in a protective casing to friction sliding parts of respective components through pumping movement by utilizing the reciprocal movement of a piston rod, and an oil supplement section for supplementing the hydraulic oil chamber with the oil. The hydraulic brake system has improved durability and anti-abrasion, and provides emergency braking in the event of oil leakage.

Abstract: A method of etching a metal or metal oxide, including a platinum family metal or a platinum family metal oxide. A wafer is first provided which comprises: (a) a semiconductor substrate, (b) a metal or metal oxide layer over the semiconductor substrate, and (c) a titanium containing patterned mask layer having one or more apertures formed therein positioned over the metal or metal oxide layer. The metal or metal oxide is then etched through the apertures in the mask layer by a plasma etching step that uses plasma source gases comprising the following: (a) a gas that comprises one or more carbon-oxygen bonds (for example, CO gas or CO2 gas) and (b) a gas that comprises one or more chlorine atoms (for example, Cl2 gas, carbon tetrachloride gas, silicon tetrachloride gas or boron trichloride gas).

Abstract: An improved technique for limiting current in a switching power converter. The switching power converter includes a soft-start circuit which slowly increases a switching duty cycle upon power-up. Once the converter is operating normally, the duty cycle is controlled to regulate the output voltage. In the event an excessive output current is detected, soft-start circuit is controlled to reduce the switching duty cycle. More particularly, a soft-start capacitor may be discharged during portions of a clock period used to control switching.

Abstract: A simple method of forming a cup capacitor is disclosed. The method typically involves only “dry” deposition and etching steps, allowing applicants' method to be performed in a single processing apparatus, if so desired.

Abstract: Nonvolatile etch byproduct contaminants are generated during etching processes for forming electrodes of storage capacitors for very high density future memory cells, such as ferroelectric random access memory (FeRAM) cells. These contaminants include significant quantities of metals and metal compounds. In order to prevent undesirable metal etch byproduct particulates from adversely affecting subsequent etching processes performed in the chamber, the plasma metal etch chamber is seasoned by placing a substrate in the chamber, then exposing the substrate and interior surfaces of the chamber to a seasoning plasma generated from a source gas that includes at least one principal etchant gas used during an etch process which produced the nonvolatile etch byproducts. The method is performed at a substrate temperature that is equal to or greater than a substrate temperature at which the nonvolatile etch byproducts were produced.

Abstract: Contaminants are generated during etching processes for forming electrodes of storage capacitors for very high density future memory cells, such as ferroelectric random access memory (FeRAM) cells. These contaminants include significant quantities of noble metals, and in particular iridium and iridium compound particulates. In order to prevent undesirable iridium and iridium compound particulates from adversely affecting subsequent etching processes performed in the chamber, the plasma metal etch chamber is seasoned by exposing interior surfaces of the chamber to a seasoning plasma generated from a gas mixture comprising at least two gases selected from the group consisting of BCl3, HBr, and CF4. The chamber seasoning method of the invention is also applicable to etch processes involving other noble metals, such as platinum.

Abstract: A volt-second balanced, power factor correction (PFC), pulse-width modulation (PWM) two-stage power converter. A first PFC stage receives an AC input signal and forms a regulated intermediate output voltage. A second stage receives the intermediate output voltage and forms a regulated DC output voltage. A level of the intermediate output voltage is monitored and used to adjust the duty cycle of a main power switch in the PWM stage. By adjusting the PWM duty cycle based on the level of the intermediate output voltage, rather than the DC output voltage, the PWM converter is volt-second balanced. Further, when a controller for the power converter is implemented as an integrated circuit, a pin is not required for monitoring the regulated DC output. Accordingly, the number of pins is minimized.

Abstract: A current inrush limiting technique for a switching power converter. In one aspect, a switching power converter includes a main power switch and a current sensor. When the input current exceeds a first threshold, the main power switch is opened. When the input current exceeds a second threshold, higher than the first threshold, a current-limiting resistance is coupled to receive the input current. Accordingly, the input current is limited in two stages by two different techniques. In another aspect, a bleed resistor receives current from a power source for providing power to a controller for the power converter. After start-up, such as when an output voltage of the power converter is available to provide power to the controller, the current-limiting resistor is shorted and the bleed resistor is effectively removed. A single pin of an integrated circuit controller controls shorting of the current-limiting resistor and removal of the bleed resistor.

Abstract: A current limiting technique for a voltage converter. Parasitic resistance of an inductor in an input path to the converter is used to determine the level of current input to the converter. If the measured current level is excessive, then switching in the converter may be interrupted until the current falls to an acceptable level. A modulated input current passes through an inductor of a voltage converter. An input voltage at a first terminal of the inductor is filtered and compared to an output voltage formed at a second terminal of the inductor. The difference in these values is indicative of a voltage across the parasitic resistor and, thus, is indicative of the input current. When the difference exceeds a predetermined level, the input current may be interrupted until the current in the inductor falls to an acceptable level. Current in one or both directions may be monitored for an excessive level.