Abstract: A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.3 &mgr;m and having a platinum profile equal to or greater than about 85°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising chlorine, argon and a gas selected from the group consisting of BCl3, HBr, and mixtures thereof. A semiconductor device having a substrate and a plurality of platinum electrodes supported by the substrate. The platinum electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 &mgr;m and a platinum profile equal to or greater than about 85°.

Abstract: A low power mode and feedback arrangement for a switching power converter. Two or more main power switches, such as transistors, transfer energy from a supply to load by their opening and closing. When the load requires a relatively low power level, this condition is detected. In response, one or more of the transistor switches is disabled from switching and the reduced power requirements of the load are handled by the remaining one or more transistor switches. As a result, switching losses are reduced. This is because parasitic gate capacitance and on-resistance associated with the disabled switches no longer consume power from the power source. The invention provides significant efficiency advantages during periods when the load draws a low level of power. This is especially useful for battery-powered devices which may operate in a low power mode for extended periods of time, such as standby mode as in a portable telephone.

Abstract: A power factor correction circuit arrangement. A rectified alternating-current (AC) input signal may be applied across inputs of a voltage converter circuit, such as a boost converter. Current drawn by the voltage converter may be sensed to form a first sensing signal that is representative of the current. The rectified input voltage may be converted to a second sensing signal that is representative of the AC input signal. Switching in the power converter is adjusted in a first feedback loop to equalize the first and second sensing signals and, thus, the current drawn is regulated to remain in phase with the AC input signal. A feedback signal adjusts switching so as to regulate the output voltage level of the voltage converter in a second feedback loop and, thus, controls power delivered to the load.

Abstract: We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to preheating a substrate which includes a metal-containing layer which is to be pattern etched subsequent to preheating. The method includes exposing the substrate to a preheating plasma which produces a deposit or residue during preheating which is more easily etched than said metal-containing layer during the subsequent plasma etching of said metal-containing layer.

Abstract: A current limiting technique for a voltage converter. Parasitic resistance of an inductor in an input path to the converter is used to determine the level of current input to the converter. If the measured current level is excessive, then switching in the converter may be interrupted until the current falls to an acceptable level. Because parasitic resistance is used to detect the input current, rather than a dedicated sensing resistor, fewer components are required. Thus, implementation of the converter and its associated control circuitry is simplified. A modulated input current passes through an inductor of a voltage converter. An input voltage at a first terminal of the inductor is filtered and compared to an output voltage formed at a second terminal of the inductor. The difference in these values is indicative of a voltage across the parasitic resistor and, thus, is indicative of the input current.

Abstract: A low power mode and feedback arrangement for a switching power converter. Two or more main power switches, such as transistors, transfer energy from a supply to load by their opening and closing. When the load requires a relatively low power level, this condition is detected. In response, one or more of the transistor switches is disabled from switching and the reduced power requirements of the load are handled by the remaining one or more transistor switches. As a result, switching losses are reduced. This is because parasitic gate capacitance and on-resistance associated with the disabled switches no longer consume power from the power source. The invention provides significant efficiency advantages during periods when the load draws a low level of power. This is especially useful for battery-powered devices which may operate in a low power mode for extended periods of time, such as standby mode as in a portable telephone.

Abstract: We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to the preheating of a substrate which includes a material which is to be pattern etched at a temperature in excess of 150° C. The method comprises exposing the substrate to a preheating plasma generated from a plasma source gas which includes a reactive gas that aids in the production of a sputtered/etched residue during the preheating which is more easily etched during a subsequent pattern etching step than the material which is being pattern etched. In another embodiment of the method, the reactive gas in the preheating plasma source gas is slightly reactive with the material which is to etched during the subsequent pattern etching step.

Abstract: In an embodiment of the present invention, a method is provided of patterning PZT layers or BST layers. For example, a PZT layer or a BST layer is plasma etched through a high-temperature-compatible mask such as a titanium nitride (TiN) mask, using a plasma feed gas comprising as a primary etchant boron trichloride (BCl3) or silicon tetrachloride (SiCi4). Although BCl3 or SiCl4 may be used alone as the etchant plasma source gas, it is typically used in combination with an essentially inert gas. Preferably the essentially inert gas is argon. Other potential essentially inert gases which may be used include xenon, krypton, and helium. In some instances O2 or N2, or Cl2, or a combination thereof may be added to the primary etchant to increase the etch rate of PZT or BST relative to adjacent materials, such as the high-temperature-compatible masking material. A TiN masking material can easily be removed without damaging underlying oxides.

Abstract: An hydraulic brake system that rapidly and precisely slows or reduces speed by constraining or stopping the movement of a link mechanism connected between a piston and a rotational driving shaft of a power system with physical force generated due to the incompressible fluid characteristic by constraining or stopping the flow of oil filled in an hydraulic oil chamber. The hydraulic brake system includes a lubricating section for supplying the oil reserved in a protective casing to friction sliding parts of respective components through pumping movement by utilizing the reciprocal movement of a piston rod, and an oil supplement section for supplementing the hydraulic oil chamber with the oil. Accordingly, the possible abrasion of the respective friction sliding parts is constrained, and the durability is improved. Further, in the event of oil leakage, the oil is supplemented for emergency-braking, so that a possible accident can be prevented.

Abstract: A method of processing a substrate 30 comprises exposing the substrate 30 to an energized process gas to etch features 67 on the substrate 30 and exposing the substrate 30 to an energized cleaning gas to remove etchant residue 70 and/or remnant resist 60 from the substrate 30. To enhance the cleaning process, the substrate 30 may be treated before, during or after the cleaning process by exposing the substrate 30 to an energized treating gas comprising a halogen species.

Abstract: A low power mode and feedback arrangement for a switching power converter. Two or more main power switches, such as transistors, transfer energy from a supply to load by their opening and closing. When the load requires a relatively low power level, this condition is detected. In response, one or more of the transistor switches is disabled from switching and the reduced power requirements of the load are handled by the remaining one or more transistor switches. As a result, switching losses are reduced. This is because parasitic gate capacitance and on-resistance associated with the disabled switches no longer consume power from the power source. The invention provides significant efficiency advantages during periods when the load draws a low level of power. This is especially useful for battery-powered devices which may operate in a low power mode for extended periods of time, such as standby mode as in a portable telephone.

Abstract: A low power mode and feedback arrangement for a switching power converter. Two or more main power switches, such as transistors, transfer energy from a supply to load by their opening and closing. When the load requires a relatively low power level, this condition is detected. In response, one or more of the transistor switches is disabled from switching and the reduced power requirements of the load are handled by the remaining one or more transistor switches. As a result, switching losses are reduced. This is because parasitic gate capacitance and on-resistance associated with the disabled switches no longer consume power from the power source. The invention provides significant efficiency advantages during periods when the load draws a low level of power. This is especially useful for battery-powered devices which may operate in a low power mode for extended periods of time, such as standby mode as in a portable telephone.

Abstract: A low power mode and feedback arrangement for a switching power converter. Two or more main power switches. such as transistors, transfer energy from a supply to load by their opening and closing. When the load requires a relatively low power level, this condition is detected. In response, one or more of the transistor switches is disabled from switching and the reduced power requirements of the load are handled by the remaining one or more transistor switches. As a result, switching losses are reduced. This is because parasitic gate capacitance and on-resistance associated with the disabled switches no longer consume power from the power source. The invention provides significant efficiency advantages during periods when the load draws a low level of power. This is especially useful for battery-powered devices which may operate in a low power mode for extended periods of time, such as standby mode as in a portable telephone.

Abstract: Method for removing or inactivating corrosion-forming etch residues remaining on the surface of a dielectric material after etching a metal layer which is supported by the dielectric material. The surface of the dielectric material which supports the corrosion-forming etch residues is post-etch treated in order to remove the corrosion-forming etch residues. Post-etch treating of the surface of the dielectric material includes disposing the dielectric material in a vacuum chamber having microwave downstream treating gas plasma, or contacting the surface of the dielectric material with deionized water.

Abstract: A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 Å.

Abstract: A baby carrier is provided, which includes: a baby wrapper having a back supporter formed toward the back of a user, a bottom sheet formed on the bottom of the back supporter and a sheet formed by folding the back supporter and the bottom sheet in the counter-direction of the user's back, to thereby form a space for enabling the user to take a baby on the user's back; a reception portion having a sack formed to have a reception space in the direction where the back supporter is folded from the baby wrapper; shoulder straps formed toward either shoulder of the user from the sack of the reception portion; and a supporter which is connected toward each other in the middle of the shoulder straps, and connected with the shoulder straps from the center portion on the bottom of the baby wrapper.

Abstract: A method of processing a metal layer on a substrate. The method comprises disposing the substrate in a chamber having a dielectric member and processing gas. An interior surface of the dielectric member is heated to a temperature above about 150° C. and the metal layer is processed when processing power is passed through the heated dielectric member. Heating of the interior surface of the dielectric member essentially prevents deposits from forming on the interior surface and allows a stable power transmission through the dielectric member.

Abstract: A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 Å.

Abstract: A method of etching a platinum electrode layer disposed on a substrate. The method comprises providing a substrate supporting a platinum electrode layer, an insulation layer on the platinum electrode layer, and a resist layer on the insulation layer. A portion of the insulation layer is etched by employing a plasma of an etchant gas to break through and to remove the portion of the insulation layer from the platinum electrode layer to expose part of the platinum electrode layer. The exposed part of the platinum electrode layer is then etched by employing a plasma of an etchant gas comprising argon. The etched platinum electrode layer is subsequently overetched by employing a high density plasma of an etchant gas to remove redeposited veils from the etched platinum electrode layer. The etched platinum electrode layer is employed in a semiconductor device.

Abstract: An assembly for allowing stable power transmission into a plasma processing chamber comprising a dielectric member; and at least one material deposition support assembly secured to the dielectric member for receiving and supporting the deposition of materials during processing of a substrate and a chamber having a controlled environment and containing a plasma of a processing gas. A plasma reactor for processing substrates having a reactor chamber including a chamber sidewall and a dielectric window supported by the chamber sidewall. A plurality of deposition support members is coupled to an inside surface of the dielectric window for receiving and supporting a deposition of materials during processing of substrates. In an alternative embodiment of the invention, the plurality of deposition support members is connected to a liner assembly instead of to the dielectric window. The liner assembly is supported by the chamber sidewall.