Abstract: A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 ?m and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HBr, and SiCl4 mixtures thereof. Masking methods and etching sequences for patterning high density RAM capacitors are also provided.

Abstract: A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.

Abstract: A method and apparatus for etching a magnetic memory cell stack are described. More particularly, HCl is used as a main etchant gas for etching a magnetic memory cell stack. HCl is used in part to reduce corrosion and improve selectivity. Additionally, use of an amorphous carbon or hydrocarbon based polymer resin for a hard mask is described, as well as a post-etch passivation with a water rinse, a water vapor plasma treatment or an ammonia plasma treatment. Moreover, in an embodiment, a diffusion barrier layer dispose most of the magnetic memory cell stack is etched with hydrogen and fluorine containing gas in a separate process chambers.

Abstract: A process for producing a monoalkylation aromatic product, such as ethylbenzene and cumene, utilizing an alkylation reactor zone and a transalkylation zone in series or a combined alkylation and transkylation reactor zone.

Abstract: Method and structure for masking are disclosed. In one embodiment, a thin layer of radiation sensitive material is combined with another layer of radiation opaque material with different etch selectivity to facilitate a multi-stage patterning treatment of an underlying mask layer and a resultant critical dimension in the patterned mask which may be less than that available using conventional patterning techniques.

Abstract: The invention relates to a pulse-skipping power converter. In one aspect, a power converter has two stages. When the load is high, both stages are enabled. As the load decreases, one or both of the stages may enter pulse-skipping mode to improve efficiency. As the load is reduced further, the one or both of the stages may be disabled. When both stages are disabled, an auxiliary power supply may be enabled. In a further aspect, an error signal is produced by comparing a signal representative of an output voltage or current of the power converter relative to a level. A pulse-width modulation (PWM) signal including a series of pulses is produced by comparing the error signal to a ramp signal. The duty cycle of the PWM signal is compared to a reference duty cycle. If the duty cycle of the PWM signal is less then the reference duty cycle then the next pulse in the PWM signal is skipped.

Abstract: A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.3 &mgr;m and having a platinum profile equal to or greater than about 85°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising chlorine, argon and a gas selected from the group consisting of BCl3, HBr, and mixtures thereof. A semiconductor device having a substrate and a plurality of platinum electrodes supported by the substrate. The platinum electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 &mgr;m and a platinum profile equal to or greater than about 85°.

Abstract: Provided is a method of generating a hydrogen-rich reformate from a hydrocarbon feed stream comprising olefins and alkanes (e.g., LPG). An inlet gas stream containing the hydrocarbon feed stream and an oxygen containing gas stream, is preheated to a temperature of from 180 to 300° C. The preheated inlet gas stream is then contacted with a sulfur tolerant partial oxidation catalyst to form a pre-reformed gas stream, which is preferably maintained below about 400° C. The pre-reformed gas stream is then subjected to a reforming process to form the hydrogen-rich reformate.

Abstract: Contaminants are generated during etching processes for forming electrodes of storage capacitors for very high density future memory cells, such as ferroelectric random access memory (FeRAM) cells. These contaminants include significant quantities of noble metals, and in particular iridium and iridium compound particulates. In order to prevent undesirable iridium and iridium compound particulates from adversely affecting subsequent etching processes performed in the chamber, the plasma metal etch chamber is seasoned by exposing interior surfaces of the chamber to a seasoning plasma generated from a gas mixture comprising at least two gases selected from the group consisting of BCl3, HBr, and CF4. The chamber seasoning method of the invention is also applicable to etch processes involving other noble metals, such as platinum.

Abstract: The present invention is directed, inter alia, to compositions and methods for treating, healing, or regeneration of ciliated epithelial structures, particularly those of mucosal membranes. In particular, the invention is directed to a method comprising topical administration of vitamin A (including retinoic acid) to ciliated epithelia structures, including, for example, the paranasal sinus mucosa, middle ear epithelium, and tracheal epithelium. In preferred embodiments the inventive methods are used in the context of surgery, and post-surgical healing and regeneration of epithelial and mucosal epithelial structures and cells.

Abstract: A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 Å.

Abstract: A current inrush limiting technique for a switching power converter. In one aspect, a switching power converter includes a main power switch and a current sensor. When the input current exceeds a first threshold, the main power switch is opened. When the input current exceeds a second threshold, higher than the first threshold, a current-limiting resistance is coupled to receive the input current. Accordingly, the input current is limited in two stages by two different techniques. In another aspect, a bleed resistor receives current from a power source for providing power to a controller for the power converter. After start-up, such as when an output voltage of the power converter is available to provide power to the controller, the current-limiting resistor is shorted and the bleed resistor is effectively removed. A single pin of an integrated circuit controller controls shorting of the current-limiting resistor and removal of the bleed resistor.

Abstract: A simple method of forming a cup capacitor is disclosed. The method typically involves only “dry” deposition and etching steps, allowing applicants' method to be performed in a single processing apparatus, if so desired.

Abstract: We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to preheating a substrate which includes a metal-containing layer which is to be pattern etched subsequent to preheating. The method includes exposing the substrate to a preheating plasma which produces a deposit or residue during preheating which is more easily etched than said metal-containing layer during the subsequent plasma etching of said metal-containing layer.

Abstract: A method of processing a substrate 30 comprises exposing the substrate 30 to an energized process gas to etch features 67 on the substrate 30 and exposing the substrate 30 to an energized cleaning gas to remove etchant residue 70 and/or remnant resist 60 from the substrate 30. To enhance the cleaning process, the substrate 30 may be treated before, during or after the cleaning process by exposing the substrate 30 to an energized treating gas comprising a halogen species.

Abstract: We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to the preheating of a substrate which includes a material which is to be pattern etched at a temperature in excess of 150° C. The method comprises exposing the substrate to a preheating plasma generated from a plasma source gas which includes a reactive gas that aids in the production of a sputtered/etched residue during the preheating which is more easily etched during a subsequent pattern etching step than the material which is being pattern etched. In another embodiment of the method, the reactive gas in the preheating plasma source gas is slightly reactive with the material which is to etched during the subsequent pattern etching step.

Abstract: An improved technique for limiting current in a switching power converter. The switching power converter includes a soft-start circuit which slowly increases a switching duty cycle upon power-up. Once the converter is operating normally, the duty cycle is controlled to regulate the output voltage. In the event an excessive output current is detected, soft-start circuit is controlled to reduce the switching duty cycle. More particularly, a soft-start capacitor may be discharged during portions of a clock period used to control switching.

Abstract: A current limiting technique for a voltage converter. A current through a reactive element in a voltage converter is limited. Current from a supply is switched through a reactive element in accordance with a switch control signal for forming a regulated output voltage in a feedback loop. A first signal that is representative of the input current is sensed. A voltage that is representative of the output voltage of the voltage converter is sensed. A second signal that is representative of a difference between the output voltage and a desired voltage is formed. A selected one of the first signal and the second signal is compared to a ramp signal for forming the switch control signal wherein the selected one of the first signal and the second signal is selected according to the relative magnitudes of the first and second signal.

Abstract: A switching power supply which uses carrier control and input voltage sensing. In one aspect, an output voltage is monitored to form a carrier signal. The carrier signal is compared to a signal that is representative of the input current in order to control the switching duty cycle. In addition, a signal representative of the input voltage is summed with the signal that is representative of the input current, or with the carrier signal, in order to effectively control the switching duty cycle under light load conditions and conditions in which the input voltage can vary.

Abstract: A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.