Patents by Inventor In-Hwan Ji

In-Hwan Ji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11761389
    Abstract: An apparatus of charging Liquefied Petroleum Gas (LPG) fuel of a bi-fuel vehicle includes: a gasoline mixing chamber mounted on an LPG bombe side, a gasoline fuel supply line connecting the gasoline mixing chamber with a fuel tank and allowing gasoline fuel to move to the gasoline mixing chamber as a first valve is open, an LPG fuel supply line connecting an LPG bombe with the gasoline mixing chamber and allowing LPG fuel to move to the gasoline mixing chamber as a second valve is open, and a control unit configured to open the first valve and control the LPG fuel to be recirculated to the LPG bombe together with the gasoline fuel by a pressure of the LPG fuel moving to the gasoline mixing chamber, as an internal pressure of the LPG bombe reaches a predetermined reference pressure.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: September 19, 2023
    Assignees: Hyundai Motor Company, Kia Corporation
    Inventors: Chang Han Kim, Sung Hwan Ji, Seung Hoon Choi, Jun Sik Lim
  • Patent number: 11761137
    Abstract: A washing machine and a method for controlling the same are provided. The washing machine includes a first rotary tub, a first driver configured to rotate the first rotary tub, a second rotary tub, a second driver configured to rotate the second rotary tub, and at least one processor configured to control the first driver and the second driver in a manner that the first rotary tub and the second rotary tub rotate. If a rotation speed of the first rotary tub is equal to or higher than a first reference speed, the at least one processor controls the second driver such that a rotation speed of the second rotary tub increases to a target speed and then decreases.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: September 19, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Jin Cho, Do-Yeon Kim, Suk Bae Kim, Ji Eun Jun, Woong Choi, Su Hwan Ji
  • Publication number: 20230273860
    Abstract: The present technology may include an error correction code engine configured to generate a parity bit and syndrome information by performing an operation according to operation source data, and a data processing circuit configured to simultaneously output the parity bit and first delay data, which is generated by delaying input data by a first time according to a write operation, simultaneously output the syndrome information and second delay data, which is generated by delaying input data by a second time according to a read operation, and to share substantially the same signal path in generating the first delay data and in generating the second delay data.
    Type: Application
    Filed: August 5, 2022
    Publication date: August 31, 2023
    Applicant: SK hynix Inc.
    Inventors: Seon Woo HWANG, Seong Jin KIM, Jung Hwan JI
  • Patent number: 11721293
    Abstract: Provided a source driver integrated circuit (IC) and a display driving device eliminating an existing input pad and internal wiring of a source driver integrated circuit (IC) for receiving a sensing reference voltage from an external voltage source by allowing the sensing reference voltage for initializing pixels during sensing of the pixels to be generated by an internal voltage source, rather than the external voltage source.
    Type: Grant
    Filed: December 7, 2021
    Date of Patent: August 8, 2023
    Assignee: LX SEMICON CO., LTD.
    Inventors: Seung Hwan Ji, Ho Sung Hong, Ye Ji Lee, Jung Bae Yun
  • Publication number: 20230215508
    Abstract: The present technology may include a first storage circuit connected to a plurality of memory banks, an error correction circuit, a read path including a plurality of sub-read paths connected between the plurality of memory banks and the error correction circuit, and a control circuit configured to control data output from the plurality of memory banks to be simultaneously stored in the first storage circuit by deactivating the read path during a first sub-test section, and to control the data stored in the first storage circuit to be sequentially transmitted to the error correction circuit by sequentially activating the plurality of sub-read paths during a second sub-test section.
    Type: Application
    Filed: May 5, 2022
    Publication date: July 6, 2023
    Applicant: SK hynix Inc.
    Inventors: Seon Woo HWANG, Seong Jin KIM, Jung Hwan JI
  • Publication number: 20230208035
    Abstract: An antenna apparatus includes a dielectric layer; and a via that extends through the dielectric layer, the via includes a conductive first portion and a non-conductive second portion surrounded by the conductive first portion. An antenna of the antenna apparatus is fed through the via.
    Type: Application
    Filed: November 7, 2022
    Publication date: June 29, 2023
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hwan JI, Jungil KIM, Hyunjun CHOI, Chin Mo KIM, Won Cheol LEE
  • Publication number: 20230026868
    Abstract: Power semiconductor devices comprise a gate pad, a plurality of gate fingers, and a first gate resistor and a first switch that are coupled between the gate pad and the gate fingers.
    Type: Application
    Filed: July 22, 2021
    Publication date: January 26, 2023
    Inventors: In-Hwan Ji, Jae-Hyung Park, Edward Van Brunt
  • Publication number: 20230023195
    Abstract: Power semiconductor devices comprise a wide bandgap semiconductor layer structure, a gate pad on the wide bandgap semiconductor layer structure, a plurality of gate fingers on the wide bandgap semiconductor layer structure, and a plurality of lumped gate resistors electrically coupled between the gate pad and the gate fingers.
    Type: Application
    Filed: June 17, 2022
    Publication date: January 26, 2023
    Inventors: Enes Ugur, Sei-Hyung Ryu, In-Hwan Ji, Jae-Hyung Park, Edward Van Brunt
  • Publication number: 20230023179
    Abstract: A semiconductor device includes a P-type body region and an N-type drift region disposed in a substrate; a gate electrode, disposed on the P-type body region and the N-type drift region, including a high concentration doping region and a high resistance region, wherein a dopant concentration of the high concentration doping region is higher than a dopant concentration of the high resistance region; a spacer disposed on a side of the gate electrode; a highly doped source region disposed in the P-type body region; and a highly doped drain region disposed in the N-type body region. The high concentration doping region overlaps the P-type body region, and the high resistance region overlaps the N-type drift region.
    Type: Application
    Filed: December 28, 2021
    Publication date: January 26, 2023
    Applicant: KEY FOUNDRY CO., LTD.
    Inventor: Hee Hwan JI
  • Publication number: 20230010470
    Abstract: An apparatus for manufacturing metal powder according to the present invention is a metal powder manufacturing apparatus, in which molten metal is broken up, and liquid droplets of the atomized molten metal are cooled by spraying cooling water using a cooling water spraying nozzle provided inside a chamber. The cooling water spraying nozzle is provided such that cooling water is sprayed in a fan shape, and cooling water spraying nozzles provided at different heights have increasing angles of inclination with respect to the inner wall of the chamber as the heights thereof are reduced, thereby decreasing a deviation between flying distances of the molten metal liquid droplets to efficiently manufacture metal powder having uniform properties.
    Type: Application
    Filed: October 28, 2020
    Publication date: January 12, 2023
    Inventors: Yong Hwan JI, Kyoung Hwa KIM, Mi So LIM, Shin KIM, Won Kyu SUH, Su Min KIM
  • Publication number: 20220399332
    Abstract: A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.
    Type: Application
    Filed: December 17, 2021
    Publication date: December 15, 2022
    Applicant: KEY FOUNDRY CO., LTD.
    Inventors: Ji Man KIM, Hee Hwan JI, Song Hwa HONG
  • Publication number: 20220366850
    Abstract: The present disclosure relates to a pixel sensing circuit which extends an operation section of an integrator by using an additional signal and allows securing a time required for a stable output of a sensing voltage.
    Type: Application
    Filed: September 28, 2020
    Publication date: November 17, 2022
    Applicant: LX Semicon Co., Ltd.
    Inventors: Seung Hwan JI, Sang Min LEE, Gi Baek CHOI, Jung Bae YUN
  • Publication number: 20220366823
    Abstract: The present disclosure relates to a pixel sensing circuit in which a test is performed only on selected specific channels among channels of the pixel sensing circuit and the total test time of the pixel sensing circuit and data throughput for the test may be reduced.
    Type: Application
    Filed: September 28, 2020
    Publication date: November 17, 2022
    Applicant: LX Semicon Co., Ltd.
    Inventors: Seung Hwan JI, Yong Jung KWON, Ho Sung HONG, Jung Bae YUN
  • Patent number: 11477658
    Abstract: Provided is a method of performing network listening (NL) for a radio unit (RU) in a Cloud-Radio Access Network (C-RAN) structure base station in which a certain RU distinguishes and automatically detects signals of neighboring RUs through NL in a C-RAN structure base station to thereby enable optimization and automation of configuration setting of multiple cells and multiple RUs.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: October 18, 2022
    Assignee: INNOWIRELESS CO., LTD.
    Inventors: Young Su Kwak, Min Ho Yu, Seung Hwan Ji
  • Publication number: 20220298980
    Abstract: An apparatus of charging Liquefied Petroleum Gas (LPG) fuel of a bi-fuel vehicle includes: a gasoline mixing chamber mounted on an LPG bombe side, a gasoline fuel supply line connecting the gasoline mixing chamber with a fuel tank and allowing gasoline fuel to move to the gasoline mixing chamber as a first valve is open, an LPG fuel supply line connecting an LPG bombe with the gasoline mixing chamber and allowing LPG fuel to move to the gasoline mixing chamber as a second valve is open, and a control unit configured to open the first valve and control the LPG fuel to be recirculated to the LPG bombe together with the gasoline fuel by a pressure of the LPG fuel moving to the gasoline mixing chamber, as an internal pressure of the LPG bombe reaches a predetermined reference pressure.
    Type: Application
    Filed: March 21, 2022
    Publication date: September 22, 2022
    Applicants: Hyundai Motor Company, Kia Corporation
    Inventors: Chang Han KIM, Sung Hwan JI, Seung Hoon CHOI, Jun Sik LIM
  • Publication number: 20220277960
    Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.
    Type: Application
    Filed: May 18, 2022
    Publication date: September 1, 2022
    Applicant: Key Foundry Co., Ltd.
    Inventors: Hee Hwan JI, Ji Man KIM, Song Hwa HONG, Bo Seok OH
  • Patent number: 11373872
    Abstract: The present disclosure provides a method of manufacturing a semiconductor device includes forming a first gate insulating film on a substrate for a first device, forming a first gate electrode on the first gate insulating film; forming a mask pattern on the first gate electrode to expose opposing end portions of the first gate electrode, wherein a length of the mask pattern is smaller than a length of the first gate electrode; performing ion implantation through the exposed opposing end portions of the first gate electrode using the mask pattern to simultaneously form first and second drift regions in the substrate; forming spacers on sidewalls of the first gate electrode, respectively; and forming a first source region and a first drain region in the first and second drift regions, respectively.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: June 28, 2022
    Assignee: KEY FOUNDRY CO., LTD.
    Inventors: Hee Hwan Ji, Ji Man Kim, Song Hwa Hong, Bo Seok Oh
  • Publication number: 20220201494
    Abstract: Provided is a method of performing network listening (NL) for a radio unit (RU) in a Cloud-Radio Access Network (C-RAN) structure base station in which a certain RU distinguishes and automatically detects signals of neighboring RUs through NL in a C-RAN structure base station to thereby enable optimization and automation of configuration setting of multiple cells and multiple RUs.
    Type: Application
    Filed: May 7, 2021
    Publication date: June 23, 2022
    Inventors: Young Su KWAK, Min Ho YU, Seung Hwan JI
  • Patent number: 11364639
    Abstract: A construction robot for a ceiling is provided. The construction robot includes: a robot base having an upper plate; a targeting unit on the upper plate, wherein the targeting unit moves a robotic arm assembly combined with the targeting unit, and wherein the robotic arm assembly includes: a first robotic arm where a drill is mounted, wherein a first elevating unit of the first robotic arm is elevated or lowered according to information on the ceiling, a second robotic arm where an anchor bolt inserting equipment is mounted, wherein a second elevating unit of the second robotic arm is elevated or lowered according to the information, and a third robotic arm where an impact wrench is mounted, wherein a third elevating unit of the third robotic arm is elevated or lowered likewise; and a loading unit on the upper plate or the targeting unit for providing anchor bolt assemblies.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: June 21, 2022
    Assignees: DAEMYOUNGGEC CO., LTD., SAMSUNG C&T CORPORATION
    Inventors: Jong Man Seo, Sung Hu Lee, Jung Hwan Ji, Young Woon Jun, Chun Won Park, Kye Young Lee, Chul Young Kim
  • Publication number: 20220189417
    Abstract: Provided a source driver integrated circuit (IC) and a display driving device eliminating an existing input pad and internal wiring of a source driver integrated circuit (IC) for receiving a sensing reference voltage from an external voltage source by allowing the sensing reference voltage for initializing pixels during sensing of the pixels to be generated by an internal voltage source, rather than the external voltage source.
    Type: Application
    Filed: December 7, 2021
    Publication date: June 16, 2022
    Inventors: Seung Hwan Ji, Ho Sung Hong, Ye Ji Lee, Jung Bae Yun