Abstract: A fuel injector diagnostic is disclosed. In one example, the diagnostic can determine if that amount of fuel injected or the timing of start of injection is degraded. Thus, the fuel injector diagnostic method can distinguish between different types of injector degradation.

Abstract: A fuel injector diagnostic is disclosed. In one example, the diagnostic can determine if that amount of fuel injected or the timing of start of injection is degraded. Thus, the fuel injector diagnostic method can distinguish between different types of injector degradation.

Abstract: A fuel injector diagnostic is disclosed. In one example, the diagnostic can determine if that amount of fuel injected or the timing of start of injection is degraded. Thus, the fuel injector diagnostic method can distinguish between different types of injector degradation.

Abstract: An example apparatus for generating acoustic waves is disclosed. The example apparatus includes a housing, and at least one plate having a moment arm, wherein each plate couples to the housing. The example apparatus for generating acoustic also includes at least one axial driver coupled to each moment arm, wherein each axial driver aligns with a longitudinal axis of the housing.

Abstract: A method of fabricating an a non-volatile memory includes forming trench isolation regions in an inactive region of a semiconductor substrate, adjacent trench isolation regions defining respective protrusions having rounded edges therebetween, wherein upper surfaces of the trench isolation regions are lower than an upper surface of the semiconductor substrate and wherein the protrusions define an active region, forming a tunnel insulating layer covering the protrusion of the semiconductor substrate, and forming, sequentially, a storage layer, a blocking insulating layer, and a gate layer covering the tunnel insulating layer.

Abstract: An electrically erasable programmable read-only memory (EEPROM) comprises trench isolation regions whose upper surfaces are recessed compared with an upper surface of the semiconductor substrate, thereby allowing use of all surfaces of a protrusion of the semiconductor substrate between the isolation regions, including the upper surface of the semiconductor substrate, as an active region. Accordingly, the performance of a memory cell can be improved by increasing the size of an active channel region without needing to change the size of a planar unit cell.

Abstract: A method for reducing a skin effect in a downhole environment is provided, including the step of radiating vibrational waves at a wellbore wall such that the vibrational waves have at least one direction of greatest vibrational energy transfer directed toward the wall, thereby reducing the skin effect. An apparatus for reducing a skin effect in a downhole environment is also provided. The apparatus includes at least one vibrational wave source having at least one direction of greatest vibrational energy transfer, and a means for positioning the vibrational wave source proximate a wellbore wall.

Abstract: A method for operating an internal combustion engine. The method includes: providing a functional relationship between time rate of change in engine speed, and compression ratio switching engine speed limit; determining time rate of change in engine speed; determining from the determined rate of change of engine speed and the function whether the engine speed exceeds the compression ratio switching engine speed; and commanding the engine to operate at a relatively low compression ratio if the determined time of change in engine speed exceeds the compression ratio switching engine speed limit and commanding the engine to operate at a relatively high compression ratio if the determined time of change in engine speed is less than the compression ratio switching engine speed limit.

Abstract: A method for generating acoustic waves, the method having the steps of: extending a tine from a support structure so that a proximal end of the tine is attached to the support structure and a distal end of the tine is uninhibited; positioning an oscillator so as to be supported by the support structure and to mechanically communicate with the tine; and oscillating the tine with the oscillator.

Abstract: An apparatus for generating acoustic waves, the apparatus having: a support structure; two tines extending from the support structure so that proximal ends of the two tines are attached to the support structure so that distal ends of the two tines are positioned with standoffs relative to a dimension of the support structure and the distal ends of the two tines are uninhibited, wherein the two tines each comprise a moment arm; and an oscillator in mechanical communication with the two tines.

Abstract: An example method for generating acoustic waves is disclosed. The example method includes activating at least one driver, transmitting force from the at least one driver to at least one moment arm, and transferring force from the at least one moment arm to at least one plate, thereby causing the at least one plate to vibrate and generate acoustic waves.

Abstract: An example apparatus for generating acoustic waves is disclosed. The example apparatus includes a housing, and at least one plate having a moment arm, wherein each plate couples to the housing. The example apparatus for generating acoustic also includes at least one axial driver coupled to each moment arm, wherein each axial driver aligns with a longitudinal axis of the housing.

Abstract: Nonvolatile memory devices and methods for fabricating the same are provided. The device includes first and second base patterns disposed under floating and selection gates, respectively, at an active region. A channel region is formed in the active region between the first and second base patterns, and source and drain regions are formed in the active region adjacent to the first and second base patterns, respectively. The method includes forming first and second base patterns on a semiconductor substrate to be separated from each other by a predetermined space. A channel region is formed in the semiconductor substrate between the first and second base patterns. Source and drain regions are formed in the semiconductor substrate adjacent to the reverse side of the channel region on the basis of the first and second base patterns, respectively. A tunnel oxide layer is formed on a predetermined region of the channel region. A memory gate is formed to cover the first base pattern and the tunnel oxide layer.

Abstract: The present invention relates to a method of preparing an unfermented carbonated beverage including barley concentrate and hop extract and an unfermented carbonated beverage prepared using the method.

Abstract: An inclined carrier transferring apparatus for use inline sputtering equipment. The inclined carrier transferring apparatus includes rollers and a guiding portion. The rollers transfer and support the bottom of a carrier. The guiding portion is installed diagonally with respect to the rollers, to support the top of the carrier in a non-contact manner.

Abstract: There is provided a support platform of a non-contact transfer apparatus. The support platform includes a plurality of first holes for introducing air on a surface of the support platform, and a plurality of second holes for removing the air introduced through the first holes. At least one of a size and a number of the first holes varies in a direction from a central portion of the support platform to peripheral portions of the support platform, and the second holes are identically formed to one another.

Abstract: A sputtering apparatus for depositing a target material on a substrate includes a chamber, a target in the chamber to provide the target material, a carrier to carry the substrate in the chamber to face the target, and a plurality of masks arranged along sides of the carrier and being movable back and forth with respect to the carrier.

Abstract: A method of fabricating an a non-volatile memory includes forming trench isolation regions in an inactive region of a semiconductor substrate, adjacent trench isolation regions defining respective protrusions having rounded edges therebetween, wherein upper surfaces of the trench isolation regions are lower than an upper surface of the semiconductor substrate and wherein the protrusions define an active region, forming a tunnel insulating layer covering the protrusion of the semiconductor substrate, and forming, sequentially, a storage layer, a blocking insulating layer, and a gate layer covering the tunnel insulating layer.

Abstract: An apparatus for generating acoustic waves, the apparatus having: a support structure; two tines extending from the support structure so that proximal ends of the two tines are attached to the support structure so that distal ends of the two tines are positioned with standoffs relative to a dimension of the support structure and the distal ends of the two tines are uninhibited, wherein the two tines each comprise a moment arm; and an oscillator in mechanical communication with the two tines.

Abstract: A method for generating acoustic waves, the method having the steps of: extending a tine from a support structure so that a proximal end of the tine is attached to the support structure and a distal end of the tine is uninhibited; positioning an oscillator so as to be supported by the support structure and to mechanically communicate with the tine; and oscillating the tine with the oscillator.