Patents by Inventor Ionut Radu

Ionut Radu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210118717
    Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Inventors: Marcel Broekaart, Ionut Radu, Didier Landru
  • Patent number: 10943815
    Abstract: A substrate for microelectronic radiofrequency devices includes a carrier substrate made of a first semiconductor material having a resistivity higher than 500 ohms-cm; a plurality of trenches in the carrier substrate, which trenches are filled with a second material, and defining on a first side of the carrier substrate a plurality of first zones made of a first material and at least one second zone made of a second material. The second material has a resistivity higher than 10 kohms-cm, and the first zones have a maximum dimension smaller than 10 microns and are insulated from one another by the second zone.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: March 9, 2021
    Assignee: Soitec
    Inventors: Eric Desbonnets, Ionut Radu, Oleg Kononchuk, Jean-Pierre Raskin
  • Publication number: 20210058058
    Abstract: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
    Type: Application
    Filed: October 20, 2020
    Publication date: February 25, 2021
    Inventors: Arnaud Castex, Daniel Delprat, Bernard Aspar, Ionut Radu
  • Patent number: 10924081
    Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.
    Type: Grant
    Filed: March 25, 2020
    Date of Patent: February 16, 2021
    Assignee: Soitec
    Inventors: Marcel Broekaart, Thierry Barge, Pascal Guenard, Ionut Radu, Eric Desbonnets, Oleg Kononchuk
  • Patent number: 10910250
    Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: February 2, 2021
    Assignee: Soitec
    Inventors: Marcel Broekaart, Ionut Radu, Didier Landru
  • Patent number: 10826459
    Abstract: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
    Type: Grant
    Filed: June 9, 2016
    Date of Patent: November 3, 2020
    Assignee: Soitec
    Inventors: Arnaud Castex, Daniel Delprat, Bernard Aspar, Ionut Radu
  • Publication number: 20200295138
    Abstract: A method for manufacturing a structure comprising a first substrate comprising at least one electronic component likely to be damaged by a temperature higher than 400° C. and a semiconductor layer extending on the first comprises: (a) providing a first bonding metal layer on the first substrate, (b) providing a second substrate comprising successively: a semiconductor base substrate, a stack of a plurality of semiconductor epitaxial layers, a layer of SixGe1-x, with 0?x?1 being located at the surface of said stack opposite to the base substrate, and a second bonding metal layer, (c) bonding the first substrate and the second substrate through the first and second bonding metal layers at a temperature lower than or equal to 400° C., and (d) removing a part of the second substrate so as to transfer the layer of SixGe1-x on the first substrate using a selective etching process.
    Type: Application
    Filed: March 31, 2017
    Publication date: September 17, 2020
    Inventors: Christophe Figuet, Ludovic Ecarnot, Bich-Yen Nguyen, Walter Schwarzenbach, Daniel Delprat, Ionut Radu
  • Publication number: 20200280298
    Abstract: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Inventors: Arnaud Castex, Daniel Delprat, Bernard Aspar, Ionut Radu
  • Publication number: 20200228088
    Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.
    Type: Application
    Filed: March 25, 2020
    Publication date: July 16, 2020
    Inventors: Marcel Broekaart, Thierry Barge, Pascal Guenard, Ionut Radu, Eric Desbonnets, Oleg Kononchuk
  • Publication number: 20200161172
    Abstract: The disclosure relates to a process for locating devices, the process comprising the following steps: a) providing a carrier substrate comprising: a device layer; and alignment marks; b) providing a donor substrate; c) forming a weak zone in the donor substrate, the weak zone delimiting a useful layer; d) assembling the donor substrate and the carrier substrate; and e) fracturing the donor substrate in the weak zone so as to transfer the useful layer to the device layer; wherein the alignment marks are placed in cavities formed in the device layer, the cavities having an aperture flush with the free surface of the device layer.
    Type: Application
    Filed: November 15, 2019
    Publication date: May 21, 2020
    Inventors: Marcel Broekaart, Ionut Radu, Chrystelle Lagahe Blanchard
  • Patent number: 10621234
    Abstract: Various embodiments relate to a method and apparatus for discovering a group of interdependent computing objects within an undirected graph structure of objects in a computing environment, the method comprising the steps of performing object identification, performing relations identification, selecting objects by performing the steps comprising defining required properties, matching the required properties with the properties for each of the objects, dropping the objects which have at least one of the properties which do not match with the required properties, making a selection by performing object intersection on the objects by performing the steps of reading location and the relations for each of the objects, selecting a group including each of the objects in the sets of objects which are identical based on the relations for each of the objects, determining whether each of the objects in the group are related to each of the objects in each of the sets of objects, and determining whether at least one of th
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: April 14, 2020
    Assignee: RUNECAST SOLUTIONS LIMITED
    Inventors: Konstantin Ivanov, Marek Duris, Aylin Sali, Stanimir Markov, Ionut Radu
  • Patent number: 10608610
    Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: March 31, 2020
    Assignee: Soitec
    Inventors: Marcel Broekaart, Thierry Barge, Pascal Guenard, Ionut Radu, Eric Desbonnets, Oleg Kononchuk
  • Publication number: 20190311069
    Abstract: Various embodiments relate to a method and apparatus for discovering a group of interdependent computing objects within an undirected graph structure of objects in a computing environment, the method comprising the steps of performing object identification, performing relations identification, selecting objects by performing the steps comprising defining required properties, matching the required properties with the properties for each of the objects, dropping the objects which have at least one of the properties which do not match with the required properties, making a selection by performing object intersection on the objects by performing the steps of reading location and the relations for each of the objects, selecting a group including each of the objects in the sets of objects which are identical based on the relations for each of the objects, determining whether each of the objects in the group are related to each of the objects in each of the sets of objects, and determining whether at least one of th
    Type: Application
    Filed: April 6, 2018
    Publication date: October 10, 2019
    Inventors: Konstantin IVANOV, Marek DURIS, Aylin SALI, Stanimir MARKOV, Ionut RADU
  • Patent number: 10421354
    Abstract: A filling pipe arrangement for filling an automobile fluid tank with fluid, especially aqueous urea solution, with a passage passing through a predetermined passageway along the filling pipe arrangement, wherein the passage extends from an inserting mouth to a discharge opening, wherein an inserting end section of the passage comprising the inserting mouth is designed to hold at least temporarily an output end section of a delivery device, such as a spigot, a Kruse bottle, or the like, wherein the passage comprises, at a distance from the inserting mouth, a conducting section designed to lead fluid introduced into the filling pipe arrangement through the filling pipe arrangement, wherein the filling pipe arrangement comprises a magnetic arrangement whose magnetic field reaches into the passage in one section of the passageway, the magnetic arrangement is received in the filling pipe arrangement so that it is movable along the passageway.
    Type: Grant
    Filed: October 15, 2017
    Date of Patent: September 24, 2019
    Assignee: Röchling Automotive SE & Co. KG
    Inventor: Andi-Ionut Radu
  • Publication number: 20190157137
    Abstract: A substrate for microelectronic radiofrequency devices includes a carrier substrate made of a first semiconductor material having a resistivity higher than 500 ohms·cm; a plurality of trenches in the carrier substrate, which trenches are filled with a second material, and defining on a first side of the carrier substrate a plurality of first zones made of a first material and at least one second zone made of a second material. The second material has a resistivity higher than 10 kohms·cm, and the first zones have a maximum dimension smaller than 10 microns and are insulated from one another by the second zone.
    Type: Application
    Filed: June 6, 2017
    Publication date: May 23, 2019
    Applicant: Soitec
    Inventors: Eric Desbonnets, Ionut Radu, Oleg Kononchuk, Jean-Pierre Raskin
  • Patent number: 10276492
    Abstract: Methods of forming a semiconductor structure include forming a device layer on an initial substrate, attaching a first surface of the device layer to a temporary substrate and forming a high resistivity layer on a second surface of the device layer by removing a portion of the initial substrate. Methods further include attaching a final substrate to the high resistivity layer and removing the temporary substrate. Semiconductor structures are fabricated by such methods that include a final substrate, a high resistivity layer disposed over the final substrate and a device layer disposed over the high resistivity layer.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: April 30, 2019
    Assignee: Soitec
    Inventors: Ionut Radu, Eric Desbonnets
  • Publication number: 20190007024
    Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.
    Type: Application
    Filed: December 21, 2016
    Publication date: January 3, 2019
    Inventors: Marcel Broekaart, Thierry Barge, Pascal Guenard, Ionut Radu, Eric Desbonnets, Oleg Kononchuk
  • Publication number: 20190006577
    Abstract: A method of fabricating a monocrystalline piezoelectric layer, wherein the method comprises: supplying a donor substrate of the piezoelectric material, supplying a receiving substrate, transferring a layer called a “seed layer” from the donor substrate onto the receiving substrate, and implementing an epitaxy of the piezoelectric material on the seed layer until a required thickness for the monocrystalline piezoelectric layer is obtained.
    Type: Application
    Filed: December 21, 2016
    Publication date: January 3, 2019
    Inventors: Bruno Ghyselen, Ionut Radu, Jean-Marc Bethoux
  • Publication number: 20180316329
    Abstract: A composite structure for an acoustic wave device comprising a heterostructure includes: a useful layer of piezoelectric material, having a first face and a second face, the first face being arranged at a first bonding interface on a support substrate having a coefficient of thermal expansion less than that of the useful layer, wherein the composite structure further comprises a functional layer, an entire surface of which is arranged at a second bonding interface on the second face of the useful layer and having a coefficient of thermal expansion less than that of the useful layer. Methods are used for producing such a composite structure.
    Type: Application
    Filed: October 17, 2016
    Publication date: November 1, 2018
    Inventors: Pascal Guenard, Ionut Radu, Didier Landru, Eric Desbonnets
  • Publication number: 20180309426
    Abstract: A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.
    Type: Application
    Filed: October 17, 2016
    Publication date: October 25, 2018
    Inventors: Pascal Guenard, Ionut Radu