Abstract: A method of fabricating a substrate core structure comprises: providing first and second patterned conductive layers defining openings therein on each side of a starting insulating layer; providing a first and a second supplemental insulating layers onto respective ones of a first and a second patterned conductive layer; laser drilling a set of via openings extending through at least some of the conductive layer openings of the first and second patterned conductive layers; filling the set of via openings with a conductive material to provide a set of conductive vias; and providing a first and a second supplemental patterned conductive layer onto respective ones of the first and the second supplemental insulating layers, the set of conductive vias contacting the first supplemental patterned conductive layer at one side thereof, and the second supplemental patterned conductive layer at another side thereof.

Abstract: Methods for forming an integrated circuit chip package having through mold vias in a polymer block, and such packages are described. For example, a first interconnect layer may be formed on a molded polymer block, wherein the first interconnect layer comprises first interconnects through a first polymer layer and to the block. Then, at least one second interconnect layer may be formed on the first interconnect layer, wherein the second interconnect layer comprises second interconnects through a second polymer layer and to the first interconnects of the first interconnect layer. Through mold vias may then be formed through the block, into the first interconnect layer, and to the first interconnects. The through mold vias may be filled with solder to form bumps contacting the first interconnects and extending above the block. Other embodiments are also described and claimed.

Abstract: The present disclosure relates to the field of integrated circuit packaging and, more particularly, to packages using embedded microelectronic die applications, such a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of alignment correction of microelectronic dice within the bumpless build-up layer packages. This alignment correction may comprise characterizing the misalignment of each microelectronic die mounted on a carrier and forwarding this characterization, along with data regarding the orientation of the carrier, to processing equipment that can compensate for the misalignment of each microelectronic die.

Abstract: A method of fabricating a substrate core structure comprises: providing first and second patterned conductive layers defining openings therein on each side of a starting insulating layer; providing a first and a second supplemental insulating layers onto respective ones of a first and a second patterned conductive layer; laser drilling a set of via openings extending through at least some of the conductive layer openings of the first and second patterned conductive layers; filling the set of via openings with a conductive material to provide a set of conductive vias; and providing a first and a second supplemental patterned conductive layer onto respective ones of the first and the second supplemental insulating layers, the set of conductive vias contacting the first supplemental patterned conductive layer at one side thereof and the second supplemental patterned conductive layer at another side thereof.

Abstract: The present disclosure relates to the field of integrated circuit packaging and, more particularly, to packages using embedded microelectronic die applications, such a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of alignment correction of microelectronic dice within the bumpless build-up layer packages. This alignment correction may comprise characterizing the misalignment of each microelectronic die mounted on a carrier and forwarding this characterization, along with data regarding the orientation of the carrier, to processing equipment that can compensate for the misalignment of each microelectronic die.

Abstract: Methods for forming an integrated circuit chip package having through mold vias in a polymer block, and such packages are described. For example, a first interconnect layer may be formed on a molded polymer block, wherein the first interconnect layer comprises first interconnects through a first polymer layer and to the block. Then, at least one second interconnect layer may be formed on the first interconnect layer, wherein the second interconnect layer comprises second interconnects through a second polymer layer and to the first interconnects of the first interconnect layer. Through mold vias may then be farmed through the block, into the first interconnect layer, and to the first interconnects. The through mold vias may be filled with solder to form bumps contacting the first interconnects and extending above the block. Other embodiments are also described and claimed.

Abstract: A method for forming at least one micro-via on a substrate is disclosed. The method comprises drilling at least one hole in a substrate by using a first laser beam. The first laser beam has an energy distribution, which is more at edges of the first laser beam than at the center of the first laser beam. The method further comprises forming at least one blank pattern on a top surface of the substrate and around an outer periphery of the at least one hole by removing at least a portion of the substrate by using a second laser beam. At least one blank pattern of the plurality of blank pattern corresponds to pad of the at least one micro-via. Thereafter, the method comprises filling the plurality of blank patterns and the at least one micro-via with a conductive material to form at least micro-via.

Abstract: Methods for forming an integrated circuit chip package having through mold vias in a polymer block, and such packages are described. For example, a first interconnect layer may be formed on a molded polymer block, wherein the first interconnect layer comprises first interconnects through a first polymer layer and to the block. Then, at least one second interconnect layer may be formed on the first interconnect layer, wherein the second interconnect layer comprises second interconnects through a second polymer layer and to the first interconnects of the first interconnect layer. Through mold vias may then be formed through the block, into the first interconnect layer, and to the first interconnects. The through mold vias may be filled with solder to form bumps contacting the first interconnects and extending above the block. Other embodiments are also described and claimed.

Abstract: Package substrates enabling reduced bump pitches and package assemblies thereof. Surface-level metal features are embedded in a surface-level dielectric layer with surface finish protruding from a top surface of the surface-level dielectric for assembly, without solder resist, to an IC chip having soldered connection points. Package substrates are fabricated to enable multiple levels of trace routing with each trace routing level capable of reduced minimum trace width and spacing.

Abstract: A semiconductor device substrate includes a front section and back section that are laminated cores disposed on a front- and back surfaces of a first core. The first core has a cylindrical plated through hole that has been metal plated and filled with air-core material. The front- and back sections have laser-drilled tapered vias that are filled with conductive material and that are coupled to the plated through hole. The back section includes an integral inductor coil that communicates to the front section. The first core and the laminated-cores form a hybrid-core semiconductor device substrate with an integral inductor coil.

Abstract: A method of forming a pattern (700) on a work piece (1260) includes placing a pattern mask (1210) over the work piece, placing an aperture (100, 500, 600, 1220) over the pattern mask, and placing the work piece in a beam of electromagnetic radiation (1240). The aperture includes three adjacent sections. A first section (310) has a first side (311), a second side (312), and a first length (313). A second section (320) has a third side (321) adjacent to the second side, a fourth side (322), a second length (323), and a first width (324). A third section (330) has a fifth side (331) adjacent to the fourth side, a sixth side (332), and a third length (333). The first and third lengths are substantially equal. The first and third sections are complementary shapes, as defined herein.

Abstract: The present disclosure relates to the field of integrated circuit packaging and, more particularly, to packages using embedded microelectronic die applications, such a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of alignment correction of microelectronic dice within the bumpless build-up layer packages. This alignment correction may comprise characterizing the misalignment of each microelectronic die mounted on a carrier and forwarding this characterization, along with data regarding the orientation of the carrier, to processing equipment that can compensate for the misalignment of each microelectronic die.

Abstract: A microelectronic substrate, a method of forming the same, and a system including the same. The microelectronic substrate comprises: a conductive layer; a spacer layer disposed onto the conductive dielectric layer; a dielectric build-up layer disposed onto the spacer layer, the spacer layer being made of a material that has a lower shrinkage than a material of the embedding dielectric-build-up layer during curing, and a higher viscosity than a material of the embedding dielectric build-up layer in its pre-cure form and during curing; and active or passive microelectronic components embedded within the dielectric build-up layer.

Abstract: A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.

Abstract: Some embodiments of the invention include thin film capacitors formed on a package substrate of an integrated circuit package. At least one of the film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first and second electrode layers. Each of the first and second electrode layers and the dielectric layer is formed individually and directly on the package substrate. Other embodiments are described and claimed.

Abstract: A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of the plurality of longitudinal trenches. A first layer of a second conductive material is deposited on the layer of the first conductive material. Thereafter, the process includes depositing a second layer of the second conductive material on the first layer of the second conductive material. The second layer of the second conductive material at least partially fills the at least one longitudinal trench. The first conductive material is selected such that a reduction potential of the first conductive material is less than a reduction potential of the second conductive material.

Abstract: In some embodiments, selective electroless plating for electronic substrates is presented. In this regard, a method is introduced including forming a film on a surface of a substrate, the film designed to prevent the seeding of an electroless plating catalyst, laser ablating the surface of the substrate through the film to form trenches, and seeding the surface of the substrate with an electroless plating catalyst. Other embodiments are also disclosed and claimed.

Abstract: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.

Abstract: Some embodiments of the invention include thin film capacitors formed on a package substrate of an integrated circuit package. At least one of the film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first and second electrode layers. Each of the first and second electrode layers and the dielectric layer is formed individually and directly on the package substrate. Other embodiments are described and claimed.

Abstract: A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of the plurality of longitudinal trenches. A first layer of a second conductive material is deposited on the layer of the first conductive material. Thereafter, the process includes depositing a second layer of the second conductive material on the first layer of the second conductive material. The second layer of the second conductive material at least partially fills the at least one longitudinal trench. The first conductive material is selected such that a reduction potential of the first conductive material is less than a reduction potential of the second conductive material.