Abstract: An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.

Abstract: A substrate cleaning system has a first processing apparatus including a first holding device for holding a substrate, and a treatment solution supply device for supplying onto the entire portion of the front surface of the substrate a treatment solution which includes a volatile component and solidifies or is cured to form a treatment film, and a second processing apparatus including a second holding device for holding the substrate, and a removal-solution supply device for supplying onto the substrate a removal solution which removes the treatment film formed on the front surface of the substrate after the treatment solution supplied by the treatment solution supply device solidifies or is cured.

Abstract: A method for cleaning a substrate includes supplying a treatment solution which includes a volatile component onto the front surface of a substrate, solidifying or curing the treatment solution through vaporization of the volatile component of the treatment solution such that a treatment film is formed on the entire portion of the front surface of the substrate, treating a different surface of the substrate while the entire portion of the front surface of the substrate is covered with the treatment film, and supplying to the substrate a removal solution which removes the treatment film in the amount sufficient such that the treatment film covering the entire portion of the front surface of the substrate is removed substantially in entirety after the treating of the different surface of the substrate is finished.

Abstract: Provided is a substrate processing apparatus, in which a processing liquid is supplied to a substrate W held horizontally by a substrate holding unit. A processing liquid passing portion includes a passing surface that is provided between the substrate W and a recovery cup provided around the substrate W such that the processing liquid flows on the passing surface. Light for concentration detection is projected from a light projection unit to the passing surface, and a concentration detection unit detects a concentration of the processing liquid based on a result of receiving the reflected light of the light by a light receiving unit.

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract: A method for cleaning a substrate includes setting a substrate inside a cleaning chamber, supplying on a surface of the substrate a treatment solution which includes a volatile component and forms a treatment film, vaporizing the volatile component of the treatment solution supplied on the surface of the substrate such that the treatment solution solidifies or is cured on the surface of the substrate and the treatment film is formed on the surface of the substrate, and supplying onto the treatment film formed on the surface of the substrate a removal solution which removes the treatment film.

Abstract: A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.

Abstract: Disclosed is a substrate liquid processing method. The method includes producing a processing liquid including deionized water, carbon dioxide, and ammonia, which has a PH of a predetermined value in a range of pH 5 to 9; and processing a substrate having a metal exposed, using the processing liquid.

Abstract: An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.

Abstract: An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

Abstract: A method for cleaning a substrate, includes supplying to a substrate having a hydrophilic surface a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the hydrophilic surface of the substrate, and supplying to the substrate having the processing film a strip-processing liquid for stripping the processing film from the substrate.

Abstract: A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.

Abstract: Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component.

Abstract: A substrate processing method includes supplying onto a substrate a processing liquid which contains a volatile component and forms a film, vaporizing the volatile component in the processing liquid such that the processing liquid solidifies or cures on the substrate and forms a film on the substrate, and supplying onto the film formed on the substrate a removing liquid which removes the processing liquid. The processing liquid is supplied onto the substrate after dry etching or ashing is applied to the substrate.

Abstract: A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.

Abstract: A substrate cleaning system has a first processing apparatus including a first holding device for holding a substrate, and a treatment solution supply device for supplying onto the entire portion of the front surface of the substrate a treatment solution which includes a volatile component and solidifies or is cured to form a treatment film, and a second processing apparatus including a second holding device for holding the substrate, and a removal-solution supply device for supplying onto the substrate a removal solution which removes the treatment film formed on the front surface of the substrate after the treatment solution supplied by the treatment solution supply device solidifies or is cured.

Abstract: A method for cleaning a substrate includes supplying a treatment solution which includes a volatile component onto the front surface of a substrate, solidifying or curing the treatment solution through vaporization of the volatile component of the treatment solution such that a treatment film is formed on the entire portion of the front surface of the substrate, treating a different surface of the substrate while the entire portion of the front surface of the substrate is covered with the treatment film, and supplying to the substrate a removal solution which removes the treatment film in the amount sufficient such that the treatment film covering the entire portion of the front surface of the substrate is removed substantially in entirety after the treating of the different surface of the substrate is finished.

Abstract: An apparatus for cleaning a substrate includes a cleaning chamber which accommodates a substrate inside the cleaning chamber, a treatment solution supply device which supplies a treatment solution having a volatile component and capable of solidifying or being cured to form a treatment film through vaporization of the volatile component, and a removal solution supply device which supplies a removal solution capable of removing the treatment film formed on a surface of the substrate. The treatment solution supply device supplies the treatment solution on the surface of the substrate set inside the cleaning chamber, and the removal solution supply device supplies the removal solution onto the treatment film formed on the surface of the substrate.

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.